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Diodes Incorporated DMTH6006SPS-13

Part No.:
DMTH6006SPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6006SPS-13.pdf
Description:
MOSFET N-CH 60V PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,262

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Product details

Overview

DMTH6006SPS-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 4.8 mΩ (typ) at VGS = 10 V and 10.5 A, optimized for high-efficiency synchronous rectification in automotive DC-DC converters.

For engineers reviewing the DMTH6006SPS-13 datasheet, DMTH6006SPS-13 pinout, DMTH6006SPS-13 application, or DMTH6006SPS-13 equivalent, key selection criteria include its 1.4 °C/W RθJC, 100% production-tested UIS robustness, low 27.9 nC total gate charge, and suitability for high-temperature under-hood power management designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 7.5 ns, tR = 8.2 ns, and Qgd = 7.3 nC at VDS = 30 V, enabling high-frequency operation in buck and multiphase converters.

Its thermal design supports high-power density mounting - the exposed drain pad provides direct thermal path to PCB copper, delivering 107 W total power dissipation at TC = +25°C and sustaining 24.2 A avalanche current with 87.9 mJ EAS under L = 0.3 mH conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage for 12 V/24 V automotive input stages and industrial 48 V systems
RDS(ON) 4.8 mΩ (typ) @ VGS = 10 V - Enables <1.1 W conduction loss at 10.5 A, critical for thermally constrained modules
ID (TC = 25°C) 100 A - Supports high-current synchronous rectifier legs without paralleling devices
Qg 27.9 nC - Low gate drive energy reduces controller loading and improves efficiency above 300 kHz
RθJC 1.4 °C/W - Enables direct heatsinking via PCB copper, simplifying thermal design in space-constrained layouts
TJ max +175°C - Qualified for under-hood automotive environments and industrial motor drives with ambient >125°C
EAS 87.9 mJ - Confirmed robustness against inductive switching stress in unregulated load-dump scenarios

Pinout & Package

Package: PowerDI5060-8 - surface-mount, 8-terminal molded plastic package with exposed drain pad for enhanced thermal and electrical performance; UL 94V-0 rated, RoHS-compliant, halogen- and antimony-free.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 5, 6, 7 Drain (D) Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB
4 Gate (G) Control terminal requiring <27.9 nC charge for full enhancement; low 0.6 Ω gate resistance minimizes ringing
8 Source (S) Reference node for gate drive; tied to power ground plane; body diode anode for reverse-recovery conduction

Key Features

Feature Design Value
100% production UIS testing Guarantees avalanche ruggedness per JEDEC JESD24-11 - eliminates field failure risk in inductive switching
+175°C continuous operation Validated junction temperature rating enables use in engine control units and traction inverters without derating
Low Ciss/Coss ratio 1721 pF / 740 pF - improves hard-switching efficiency and reduces EMI in high-frequency SMPS
Fast body diode recovery tRR = 37.0 ns, QRR = 42.9 nC - minimizes reverse-recovery losses in synchronous rectifier mode
Matte tin annealed terminals Solderable per MIL-STD-202 Method 208 - ensures reliable reflow attachment on lead-free PCBs

Applications

Automotive DC-DC Converters Industrial Motor Drives

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in ADAS ECUs and infotainment head units.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter secondary side, operating at 500 kHz–1 MHz.

Use Value: 4.8 mΩ RDS(ON) reduces conduction loss by 35% vs. legacy 8 mΩ MOSFETs, lowering thermal footprint in sealed enclosures.

Use Scenario: High-side/low-side switching in 24–48 V BLDC motor gate drivers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Power stage switch handling 50–80 A peak currents with repetitive 10 µs pulses.

Use Value: 100% UIS qualification ensures survival during motor stall events and back-EMF transients up to 24.2 A.

Server VRMs Renewable Energy Inverters

Use Scenario: Multiphase buck converter output stage supplying CPU/GPU core voltage in data center servers.

IC Role / Device Role / Timing Role: High-current phase-leg FET with 100 A continuous rating and 400 A pulsed capability.

Use Value: 1.4 °C/W RθJC allows direct thermal coupling to copper-backed heatsinks, enabling >95% efficiency at 400 A system load.

Use Scenario: DC link switching in solar microinverters and battery storage bidirectional converters.

IC Role / Device Role / Timing Role: Unidirectional power switch in boost stage, operating at 100 kHz with 60 V bus voltage.

Use Value: +175°C rating supports operation in outdoor-rated enclosures with no active cooling, reducing BOM cost and failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay SiR626DP RDS(ON) = 5.2 mΩ @ 10 V; RθJC = 1.5 °C/W; same PowerPAK® 5x6 package Lower UIS rating (EAS = 62 mJ); not AEC-Q101 qualified Preferred where cost sensitivity outweighs automotive reliability requirements
Infineon IPP026N06N RDS(ON) = 2.6 mΩ @ 10 V; TO-220FP package; RθJC = 1.2 °C/W Higher thermal performance but through-hole mounting; no +175°C rating (max TJ = +150°C) Selected when maximum conduction efficiency is prioritized over surface-mount assembly and high-temp operation

Compared with SiR626DP and IPP026N06N, DMTH6006SPS-13 uniquely combines automotive-grade +175°C operation, 100% production UIS validation, and surface-mount PowerDI5060-8 packaging - making it optimal for thermally aggressive, safety-critical automotive and industrial power stages where reliability trumps marginal RDS(ON) gains.

Availability

DMTH6006SPS-13 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMTH6006SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

DMTH6006SPS belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for high-temperature, high-current switching in engine bay and powertrain applications where robustness and long-term stability are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6006SPS-13 supports 75.9 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual PCB layout and heatsinking in the target application.

Does this MOSFET require gate resistors for reliable switching?

Yes - a gate resistor of 4.7 Ω is used in the datasheet's switching time test conditions (tD(ON), tR, etc.). Using 4.7–10 Ω limits dV/dt-induced shoot-through in half-bridge configurations and suppresses gate oscillation caused by the 0.6 Ω intrinsic gate resistance and layout inductance.

Is DMTH6006SPS-13 qualified to AEC-Q101?

No - the datasheet states that AEC-Q101 qualification applies only to parts explicitly marked and ordered with automotive change control (e.g., PPAP-capable variants). DMTH6006SPS-13 is manufactured in IATF 16949-certified facilities but is not itself AEC-Q101 certified; consult Diodes' automotive product selector for qualified equivalents.

How does the body diode performance compare to Schottky alternatives?

The body diode exhibits tRR = 37.0 ns and QRR = 42.9 nC at IF = 21 A, which is superior to standard planar MOSFETs but higher than co-packaged Schottky diodes. It enables synchronous rectification without external diodes in medium-frequency (<1 MHz) applications, though discrete Schottkys remain preferred for ultra-low-loss, high-frequency (>2 MHz) designs.

DMTH6006SPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
17.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
27.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1721 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.94W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6006SPS-13 FAQ

1.How can I place an order for DMTH6006SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6006SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6006SPS-13 reliable?

The price and inventory of DMTH6006SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6006SPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH6006SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6006SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6006SPS-13?

DMTH6006SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6006SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6006SPS-13?

For technical support, including DMTH6006SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6006SPS-13 requirements.

6.How does Aetrix verify that DMTH6006SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6006SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6006SPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH6006SPS-13?

All DMTH6006SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6006SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6006SPS-13 part is unused and in its original packaging.

Return procedure for DMTH6006SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6006SPS-13 Tags

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