Diodes Incorporated DMTH6009LK3-13

Overview

DMTH6009LK3-13 from Diodes Incorporated is a 60V, 59A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous operation up to +175°C. It delivers 10mΩ R_DS(ON) at V_GS = 10V and 12.8mΩ at 4.5V, with 33.5nC total gate charge and 2.5°C/W junction-to-case thermal resistance-optimized for high-density DC-DC converters and automotive-grade power management.

For engineers reviewing the DMTH6009LK3-13 datasheet, DMTH6009LK3-13 pinout, DMTH6009LK3-13 application, or DMTH6009LK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at 4.5V gate drive, thermally robust DPAK package, and body diode recovery performance (t_RR = 18.2ns, Q_RR = 33.1nC) for synchronous rectification.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low conduction loss while maintaining fast switching speed. Its gate threshold voltage (0.7–2.0V) enables compatibility with 3.3V and 5V logic-level drivers, and its Q_gd × R_DS(ON) figure-of-merit supports high-frequency operation in buck converters.

The device integrates a robust intrinsic body diode with 80A continuous forward current rating and 20.3A avalanche current capability (L = 0.1mH). Thermal design is enabled by direct die-to-case conduction path, validated under infinite heatsink conditions for 60W power dissipation.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad on bottom side. Molded green compound, RoHS-compliant matte tin finish on leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH6009LK3Q-13, the base part offers identical performance with simplified logistics for non-automotive use; versus IPB017N06L3, it trades 2.7× higher R_DS(ON) for 47% smaller footprint and 47% lower gate charge-favoring space-constrained, medium-power designs.

Availability

DMTH6009LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and LED backlight power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH6009LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and gate-drive flexibility are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the DMTH6009LK3-13 supports 39.2A continuous drain current (derated from 59A at 25°C using R_θJC = 2.5°C/W and T_J(max) = 175°C). This value is calculated per the thermal derating curve in Figure 12 of the datasheet and assumes proper PCB copper thermal relief and no airflow limitation.

Does this MOSFET require a gate resistor for stability in 500kHz switching?

Yes-a 1.5Ω to 3.3Ω series gate resistor is recommended to suppress oscillation and limit peak gate current. With Q_g = 33.5nC and typical driver rise time targeting 20ns, peak current reaches ~1.7A; the resistor damps parasitic LC resonance between gate capacitance and PCB inductance.

Can the body diode be used for freewheeling in asynchronous buck converters?

Yes-the intrinsic body diode is rated for 80A continuous forward current and exhibits 18.2ns reverse recovery time with 33.1nC recovered charge. It is suitable for low-frequency (<100kHz) asynchronous operation but not recommended above 250kHz due to recovery losses exceeding those of discrete Schottky alternatives.

Is the TO252 package lead (Pin 1) electrically isolated from the drain tab?

No-Pin 1 (Source) is internally bonded to the source metallization and is electrically isolated from the drain tab. The exposed drain pad (connected to Pin 3) is at drain potential; Pin 1 and Pin 2 are fully isolated from the tab. PCB layout must maintain clearance between source traces and the drain pad's solder mask opening.