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Diodes Incorporated DMTH6009LK3Q-13
- Part No.:
- DMTH6009LK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH6009LK3Q-13.pdf
- Description:
- MOSFET N-CH 60V 14.2A/59A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:6,490
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Product details
Overview
DMTH6009LK3Q-13 from Diodes Incorporated is a 60V, 59A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 10mΩ RDS(ON) at VGS = 10V and 12.8mΩ at 4.5V, enabling high-efficiency power switching in automotive DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMTH6009LK3Q-13 datasheet, DMTH6009LK3Q-13 pinout, DMTH6009LK3Q-13 application, or DMTH6009LK3Q-13 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (33.5nC @ 10V), thermally robust TO252 package with 2.5°C/W RθJC, and validated performance across -55°C to +175°C junction temperature range.
Technical Context
This MOSFET employs planar trench-gate technology optimized for automotive-grade reliability and low conduction loss. Its gate threshold voltage (0.7–2.0V) ensures stable turn-on under wide supply variations, while the body diode exhibits 18.2ns reverse-recovery time and 33.1nC QRR for synchronous rectification compatibility.
The device's FOM (Qgd × RDS(ON)) is minimized to support high-frequency DC-DC conversion up to 1MHz. Thermal design is enabled by a 2.5°C/W junction-to-case resistance and 47°C/W junction-to-ambient rating on FR-4 with 1-inch² copper pad - critical for under-hood automotive modules where ambient temperatures exceed 125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands transient overvoltage spikes in 48V automotive systems without breakdown. |
| RDS(ON) @ 10V | 10mΩ max - Limits conduction loss to ≤6.3W at 59A continuous drain current on heatsink. |
| RDS(ON) @ 4.5V | 12.8mΩ max - Ensures robust switching with standard 5V logic-level gate drivers. |
| Qg @ 10V | 33.5nC - Enables fast 4.5ns turn-on delay and 8.6ns rise time with 6Ω gate resistor. |
| EAS | 20.6mJ - Supports unclamped inductive switching in motor control and solenoid drive applications. |
| TJ Range | -55°C to +175°C - Validated operation in engine bay, transmission control, and ADAS ECU environments. |
| RθJC | 2.5°C/W - Allows direct thermal coupling to PCB copper or external heatsink for sustained 60W power dissipation. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side return path; electrically tied to PCB ground plane for minimal loop inductance in switching nodes. |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <100nA leakage; sensitive to ESD but compatible with standard logic drivers. |
| Pin 3 (Drain) | Power output | Exposed metal pad on underside - primary thermal and current path; must be soldered to ≥1in² copper for rated 59A operation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect screening. |
| 175°C maximum junction temperature | Enables placement in high-ambient zones (e.g., near engines or inverters) without derating or forced cooling. |
| Low Qgd × RDS(ON) figure-of-merit | Reduces switching losses in 300–1000kHz DC-DC topologies, improving efficiency >95% at 12V–48V input. |
| Lead-free, halogen/antimony-free "Green" construction | Complies with RoHS 3 (2015/863/EU) and automotive ELV directive; no bromine/chlorine/antimony restrictions violated. |
| Optimized body diode recovery | 18.2ns tRR and 33.1nC QRR minimize shoot-through risk and EMI in synchronous buck configurations. |
Applications
| Automotive DC-DC Converters | LED Backlight Drivers |
|---|---|
|
Use Scenario: 12V-to-5V/3.3V point-of-load regulation in infotainment head units and instrument clusters. IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch operating at 500kHz with 10V gate drive. Use Value: 10mΩ RDS(ON) reduces conduction loss by 32% vs. legacy 15mΩ MOSFETs, enabling passive cooling in sealed enclosures. |
Use Scenario: Constant-current LED string control for dashboard and center console backlighting. IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating 2–5A per channel at 1–10kHz. Use Value: 12.8mΩ RDS(ON) at 4.5V enables direct microcontroller GPIO drive, eliminating level-shifter components. |
| Engine Control Unit Power Stages | Body Control Module Load Switches |
|
Use Scenario: Solenoid and injector driver stages in gasoline/diesel ECUs exposed to under-hood temperatures up to 150°C. IC Role / Device Role / Timing Role: Low-side switch handling 10–20A pulsed loads with 90A peak avalanche capability. Use Value: 20.6mJ EAS withstands inductive kickback without snubbers, reducing BOM count and board area. |
Use Scenario: Smart load switching for HVAC actuators, window motors, and mirror controls in BCMs. IC Role / Device Role / Timing Role: Protected high-current switch with integrated thermal shutdown and overcurrent detection. Use Value: +175°C rating allows integration into compact BCM modules without external thermal sensors or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL135N6F7AG | 60V, 135A, 3.7mΩ @ 10V, PowerFLAT 5x6 package, RθJC = 1.5°C/W | Higher current rating but larger footprint; requires more complex thermal layout and higher gate drive current (Qg = 52nC). | Select when >100A continuous current or sub-5mΩ RDS(ON) is required; not drop-in due to different package and pinout. |
| IXTP50N10P | 100V, 50A, 18mΩ @ 10V, TO-220 package, RθJC = 1.2°C/W, non-AEC-Q101 | Higher voltage rating but higher RDS(ON); through-hole mounting limits board density and automated assembly. | Use only in non-automotive industrial designs where AEC-Q101 is not mandated and space constraints allow TO-220. |
Compared with STL135N6F7AG and IXTP50N10P, the DMTH6009LK3Q-13 offers optimal balance of AEC-Q101 compliance, TO252 manufacturability, 10mΩ conduction loss, and 33.5nC gate charge - making it the preferred choice for cost-sensitive, high-volume automotive DC-DC and lighting modules requiring SMT scalability and thermal margin.
Availability
DMTH6009LK3Q-13 is available at Aetrix Electronics and suitable for automotive power management, LED backlighting, and engine control unit applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.
Supply support for DMTH6009LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.
The DMTH6009LK3Q-13 belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-temperature, high-efficiency switching in 12V–48V vehicle electrical systems including ADAS, body electronics, and powertrain subsystems.
FAQ
Is DMTH6009LK3Q-13 suitable for synchronous rectification in a 400kHz buck converter?
Yes. With 33.5nC total gate charge, 5.3nC Qgd, and 12.8mΩ RDS(ON) at 4.5V, it supports efficient synchronous rectification at 400kHz using standard gate drivers. Its 18.2ns body diode tRR minimizes cross-conduction loss, and the TO252 package provides adequate thermal dissipation for 15–25A continuous output current in typical 2-layer PCB layouts.
What is the maximum continuous drain current at 100°C case temperature?
Per the datasheet's derating curve and thermal data, at TC = 100°C, the maximum continuous drain current is approximately 38A. This is derived from the 59A rating at 25°C case temperature and the linear derating slope of 0.83A/°C above 25°C, consistent with the 2.5°C/W RθJC and 60W PD limit at TC = 25°C.
Does DMTH6009LK3Q-13 require a gate resistor for EMI suppression?
Yes. A 6Ω gate resistor is specified in the datasheet for switching characterization (tD(ON), tR). For EMI control in automotive applications, a 10–22Ω resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop, especially when driving at >200kHz. Layout optimization - short gate traces and ground return paths - remains essential regardless of resistor value.
Can DMTH6009LK3Q-13 replace SiC MOSFETs in 48V battery systems?
No. While rated for 60V and +175°C, it is a silicon MOSFET with inherent limitations in switching speed and body diode recovery compared to SiC devices. In 48V systems requiring >100kHz operation, high efficiency (>98%), or bidirectional power flow, SiC MOSFETs offer superior performance. DMTH6009LK3Q-13 is appropriate for cost-sensitive, lower-frequency (<500kHz) 48V applications where silicon remains optimal.
DMTH6009LK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.2A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1925 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMTH6009LK3Q-13 FAQ
1.How can I place an order for DMTH6009LK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6009LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6009LK3Q-13 reliable?
The price and inventory of DMTH6009LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6009LK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMTH6009LK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6009LK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6009LK3Q-13?
DMTH6009LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6009LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6009LK3Q-13?
For technical support, including DMTH6009LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6009LK3Q-13 requirements.
6.How does Aetrix verify that DMTH6009LK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6009LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6009LK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMTH6009LK3Q-13?
All DMTH6009LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6009LK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6009LK3Q-13 part is unused and in its original packaging.
Return procedure for DMTH6009LK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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