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Diodes Incorporated DMTH6009LPSQ-13
- Part No.:
- DMTH6009LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6009LPSQ-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:3,720
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Product details
Overview
DMTH6009LPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for +175°C operation, with RDS(ON) = 7.2 mΩ @ VGS = 10V and 8.9 mΩ @ VGS = 4.5V, delivering 89.5A continuous drain current at TC = +25°C - optimized for high-frequency switching and synchronous rectification in automotive DC-DC converters.
For engineers reviewing the DMTH6009LPSQ-13 datasheet, DMTH6009LPSQ-13 pinout, DMTH6009LPSQ-13 application, or DMTH6009LPSQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, low Qg (33.5 nC @ 10V), 1.1°C/W RθJC, AEC-Q101 qualification, and PPAP-capable manufacturing in IATF 16949 facilities.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-temperature automotive power stages. Its 1.1°C/W junction-to-case thermal resistance enables high-power density operation when mounted on thermally enhanced PCBs or heatsinked exposed drain pads.
The device features tightly controlled gate threshold voltage (0.7–2.0 V), low reverse transfer capacitance (Crss = 41 pF), and fast switching dynamics (tD(OFF) = 35.9 ns, tF = 15.7 ns) - supporting efficient operation in hard-switched and synchronous buck topologies up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12V/24V automotive rail protection and DC-DC primary-side switching |
| RDS(ON) | 7.2 mΩ @ VGS = 10V - Enables <1.5 W conduction loss at 60A, critical for thermal management in compact modules |
| ID (TC = +25°C) | 89.5 A - Continuous current rating with case-mounted heatsinking, supporting high-current POL converters |
| Qg | 33.5 nC @ VGS = 10V - Low gate charge reduces driver power demand and improves efficiency in high-frequency PWM |
| RθJC | 1.1 °C/W - Enables direct thermal coupling to heatsinks via exposed drain pad, essential for +175°C ambient designs |
| EAS | 20.6 mJ - Avalanche energy rating validated per production UIS test, ensuring reliability under inductive load transients |
| TJ Range | −55°C to +175°C - Full operational range qualified per AEC-Q101, supporting under-hood and battery-pack applications |
Pinout & Package
Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 1–4 and 6–8 are source/drain terminals; pin 5 is gate). Molded green compound, UL 94V-0 rated, matte tin annealed finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain / Source (parallel-connected) | Multiple parallel drain/source terminals reduce bond-wire inductance and improve current sharing; pins 1–4 and 6–8 are internally tied to drain and source respectively per internal schematic |
| 5 | Gate | Single gate input with low Rg (1.7 Ω) - minimizes gate drive loop inductance and ringing in high-dI/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Guaranteed functionality and lifetime at junction temperature up to 175°C - eliminates derating in engine bay or battery thermal zones |
| 100% production UIS testing | Every unit tested for unclamped inductive switching stress (IAS = 20.3 A, EAS = 20.6 mJ) - ensures field reliability in motor drives and solenoid control |
| Low Qg/Qgd ratio | Qgd = 5.3 nC of total Qg = 33.5 nC - improves Miller immunity and enables stable operation with standard gate drivers at >300 kHz |
| AEC-Q101 qualification + PPAP support | Manufactured in IATF 16949-certified facilities with full change control documentation - satisfies Tier-1 automotive BOM requirements |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); matte tin annealed leadframe - meets global environmental compliance mandates |
Applications
| Automotive DC-DC Converters | Synchronous Rectification |
|---|---|
|
Use Scenario: 12V-to-48V bidirectional buck-boost converter in 48V mild-hybrid systems. IC Role / Device Role / Timing Role: High-side main switch handling up to 80A peak current with <10 ns propagation delay tolerance. Use Value: 7.2 mΩ RDS(ON) and 1.1°C/W RθJC enable >96% efficiency at 500 kHz switching while maintaining TJ < 150°C without forced air cooling. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48V-to-12V LLC resonant converter for ADAS domain controllers. IC Role / Device Role / Timing Role: Low-VGS turn-on MOSFET replacing Schottky diode to reduce conduction loss during high-duty-cycle operation. Use Value: 8.9 mΩ @ 4.5V gate drive allows full enhancement with standard controller gate outputs, cutting forward voltage drop by >0.4 V vs. 40V Schottky. |
| Engine Control Unit (ECU) Power Stages | Electric Power Steering (EPS) Motor Drivers |
|
Use Scenario: High-current pre-regulator supplying 5V/3.3V rails to microcontrollers and sensors in engine compartment ECUs. IC Role / Device Role / Timing Role: Low-dropout pass transistor operating in linear mode during cold-crank conditions (6V input). Use Value: 60V VDSS and −55°C to +175°C rating ensure safe operation during load dump (up to 40V) and extreme ambient cycling. |
Use Scenario: Half-bridge leg in 3-phase inverter driving 12V brushless EPS motor with peak currents >100A. IC Role / Device Role / Timing Role: Low-inductance, paralleled-source/drain configuration supports high dI/dt (>500 A/μs) without shoot-through risk. Use Value: 350A pulsed drain current rating and 20.6 mJ avalanche energy allow safe commutation during fault events like phase short or overcurrent shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(ON) = 1.4 mΩ @ 10V (lower), but Qg = 105 nC (3× higher); PowerFLAT 5x6 package with RθJC = 1.5°C/W | Better conduction loss at high current, but higher switching loss and lower thermal performance than DMTH6009LPSQ-13 | Select when conduction loss dominates (e.g., <100 kHz, high duty cycle); avoid where gate drive capability or thermal interface is constrained. |
| IXTP50N10P | 100V rating, RDS(ON) = 18 mΩ @ 10V, TO-220 package, non-AEC-Q101, RθJC = 1.0°C/W | Higher voltage margin but significantly higher RDS(ON); lacks automotive qualification and PPAP support | Acceptable for industrial prototypes or non-automotive 60V systems; not suitable for production automotive BOMs requiring AEC-Q101 traceability. |
Compared with STL220N6F7AG and IXTP50N10P, DMTH6009LPSQ-13 delivers optimal balance of low RDS(ON), moderate Qg, superior thermal resistance, and full automotive qualification - making it the preferred choice for volume production in 48V/12V DC-DC and motor control modules where reliability, thermal headroom, and supply-chain compliance are mandatory.
Availability
DMTH6009LPSQ-13 is available at Aetrix Electronics and suitable for automotive power conversion, engine control units, electric power steering systems, and ADAS domain controllers requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH6009LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This device belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for high-efficiency, high-temperature automotive power stages including DC-DC converters, motor drivers, and load switches.
FAQ
What is the maximum allowable gate-source voltage for DMTH6009LPSQ-13?
The absolute maximum VGS rating is ±16 V. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp VGS within −10 V to +12 V during transient events, especially in high-noise automotive environments where ground bounce can induce negative spikes.
How is the PowerDI5060-8 package thermally optimized for automotive use?
The package features an exposed copper drain pad that serves as the primary thermal path to the PCB. With RθJC = 1.1°C/W, it requires a minimum 1-inch² 2-oz copper thermal pad connected to internal ground planes via ≥6 thermal vias - enabling junction temperatures ≤150°C at 89.5A continuous current in still air.
Does DMTH6009LPSQ-13 support 4.5V logic-level gate drive in automotive systems?
Yes - its RDS(ON) is specified at 8.9 mΩ @ VGS = 4.5V and ID = 15A, and VGS(TH) is guaranteed 0.7–2.0 V. This ensures full enhancement using standard 5V automotive microcontroller GPIOs or dedicated gate drivers without level-shifting circuitry.
Is the DMTH6009LPSQ-13 suitable for synchronous rectification in isolated flyback converters?
Yes - its low VSD (0.9–1.2 V body diode forward voltage), fast tRR (18.2 ns), and low QRR (33.1 nC) minimize reverse recovery losses. Combined with low RDS(ON), it achieves >3% efficiency gain over Schottky diodes in 12V output flybacks operating at 100–300 kHz.
DMTH6009LPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.76A (Ta), 89.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1925 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH6009LPSQ-13 FAQ
1.How can I place an order for DMTH6009LPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6009LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6009LPSQ-13 reliable?
The price and inventory of DMTH6009LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6009LPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6009LPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6009LPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6009LPSQ-13?
DMTH6009LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6009LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6009LPSQ-13?
For technical support, including DMTH6009LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6009LPSQ-13 requirements.
6.How does Aetrix verify that DMTH6009LPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6009LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6009LPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6009LPSQ-13?
All DMTH6009LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6009LPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6009LPSQ-13 part is unused and in its original packaging.
Return procedure for DMTH6009LPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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