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Diodes Incorporated DMTH6009LPSWQ-13
- Part No.:
- DMTH6009LPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6009LPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:8,870
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Product details
Overview
DMTH6009LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for +175°C operation, with RDS(ON) = 7.2 mΩ @ VGS = 10V and 8.9 mΩ @ VGS = 4.5V, delivering 89.5A continuous drain current at TC = +25°C - optimized for high-frequency switching and synchronous rectification in automotive DC-DC converters.
For engineers reviewing the DMTH6009LPSWQ-13 datasheet, DMTH6009LPSWQ-13 pinout, DMTH6009LPSWQ-13 application, or DMTH6009LPSWQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, low Qg (33.5 nC @ 10V), 1.1°C/W RθJC, AEC-Q101 qualification with PPAP support, and thermal stability across −55°C to +175°C junction range.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-temperature automotive environments. Its 1.1°C/W junction-to-case thermal resistance enables high-power dissipation when mounted on exposed drain pads, and its 100% UIS testing ensures reliability under inductive load transients.
The device features a low gate threshold voltage (0.7–2.0 V), fast switching dynamics (tD(ON) = 4.5 ns, tF = 15.7 ns), and tightly controlled body diode characteristics (VSD = 0.9–1.2 V @ IS = 20A), supporting efficient synchronous rectification and hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12V/24V automotive bus protection and DC-DC primary-side switching. |
| RDS(ON) @ 10V | 7.2 mΩ (typ) - Enables <1.5 W conduction loss at 60A, critical for high-efficiency power stages. |
| ID (TC = 25°C) | 89.5 A - Continuous current rating achievable with proper heatsinking on PCB copper pad. |
| Qg @ 10V | 33.5 nC - Low gate charge reduces driver power demand and improves PWM efficiency above 200 kHz. |
| RθJC | 1.1 °C/W - Allows direct thermal path to heatsink or chassis, supporting >100W pulsed operation. |
| TJ Range | −55°C to +175°C - Validated operation across full automotive under-hood temperature envelope. |
| EAS | 20.6 mJ - Energy-handling capability verified per 0.1 mH inductive load test, ensuring ruggedness in motor drive snubbers. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | Eight parallel drain terminals connected to internal die and exposed thermal pad - primary current path and thermal conduction path to PCB. |
| Top-center (G) | Gate (G) | Single gate terminal located centrally on top edge - minimized gate loop inductance for high-speed switching. |
| Bottom-center (S) | Source (S) | Single source terminal centered on bottom edge - reference node for gate drive and current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Validated continuous operation up to 175°C junction temperature - eliminates derating concerns in engine bay or transmission control units. |
| 100% UIS tested in production | Every unit subjected to unclamped inductive switching stress - guarantees avalanche robustness without screening fallout. |
| Low Qg/Qgd ratio | Qgd = 5.3 nC / Qg = 33.5 nC → 15.8% - suppresses Miller-induced shoot-through in half-bridge configurations. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - meets automotive environmental compliance mandates. |
| AEC-Q101 qualified + PPAP capable | Manufactured in IATF 16949-certified facilities with full change control documentation - satisfies Tier-1 OEM sourcing requirements. |
Applications
| Automotive Body Control Module (BCM) | 48V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side load switch for headlight, HVAC blower, and seat heater control in centralized BCMs. IC Role / Device Role / Timing Role: Power switch managing up to 80A resistive loads with fast turn-on/turn-off for PWM dimming and fault current limiting. Use Value: 7.2 mΩ RDS(ON) minimizes heat generation during sustained 10A+ loads; +175°C rating avoids thermal shutdown in sealed enclosures. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V DC-DC converter for regenerative braking energy recovery. IC Role / Device Role / Timing Role: Low-loss freewheeling switch operating at 200–500 kHz with body diode conduction during dead time. Use Value: 0.9 V VSD and 18.2 ns tRR reduce reverse-recovery losses; 33.5 nC Qg enables efficient gate driving with integrated controllers. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Half-bridge high-side switch in 3-phase inverter driving 12V EPS assist motors. IC Role / Device Role / Timing Role: Fast-switching power stage element handling 60A peak phase current with tight timing control for torque ripple reduction. Use Value: 4.5 ns tD(ON) and 15.7 ns tF enable precise PWM edge placement; 20.6 mJ EAS withstands motor back-EMF spikes during sudden deceleration. |
Use Scenario: Primary-side switch in isolated flyback or forward converter powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: 60V-rated switch handling 400V bus transients with clamped inductive turn-off in auxiliary SMPS. Use Value: 60V VDSS provides margin over 48V system surges; 1.1°C/W RθJC allows compact heatsink integration within OBC enclosure constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(ON) = 1.7 mΩ @ 10V (lower), but only rated to +150°C; no 100% UIS production test specified. | Better conduction efficiency at high current, but less suitable for extreme ambient (>150°C) or high-avalanche-stress environments. | Select when thermal margin exists and ultra-low RDS(ON) dominates over temperature/robustness requirements. |
| IXTP50N10P | TO-220 package; RDS(ON) = 10 mΩ @ 10V; rated to +175°C but not AEC-Q101 qualified or PPAP-capable. | Requires through-hole assembly and external heatsink; lacks automotive qualification documentation and change control. | Select only for non-automotive industrial prototypes where qualification traceability is not required. |
Compared with STL220N6F7AG and IXTP50N10P, DMTH6009LPSWQ-13 uniquely combines AEC-Q101 qualification, +175°C operation, 100% UIS testing, and surface-mount PowerDI5060-8 packaging - making it the only option meeting full OEM requirements for under-hood high-current switching without thermal derating or qualification gaps.
Availability
DMTH6009LPSWQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, 48V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended temperature and high-reliability operational life.
Supply support for DMTH6009LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101 compliance, high-temperature resilience, and robust switching performance in safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMTH6009LPSWQ-13 supports 63.3 A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated temperatures and assumes proper PCB copper area and thermal vias under the exposed drain pad.
Is the PowerDI5060-8/SWP package lead-free and RoHS compliant?
Yes - the DMTH6009LPSWQ-13 uses matte tin annealed terminals over copper leadframe and complies with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU. It is also halogen- and antimony-free ("Green" per Diodes' definition: <900 ppm Br/Cl, <1000 ppm Sb).
Does this MOSFET require gate resistors for automotive-grade EMI control?
Yes - although the device has low Qg (33.5 nC), a 5–10 Ω gate resistor is recommended to dampen ringing and limit dV/dt during switching, especially in high-noise automotive environments. The 4.5 ns turn-on delay and 15.7 ns fall time indicate fast intrinsic switching, necessitating controlled gate drive impedance.
Can DMTH6009LPSWQ-13 replace older 60V MOSFETs like DMTH6009LPS in existing designs?
Yes - DMTH6009LPSWQ-13 is a qualified automotive-grade revision of DMTH6009LPS, sharing identical pinout, package, and electrical specifications, but adding AEC-Q101 qualification, PPAP support, and updated "Green" material compliance. No layout or firmware changes are required for drop-in replacement in qualified automotive programs.
DMTH6009LPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.76A (Ta), 89.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1925 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH6009LPSWQ-13 FAQ
1.How can I place an order for DMTH6009LPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6009LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6009LPSWQ-13 reliable?
The price and inventory of DMTH6009LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6009LPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6009LPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6009LPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6009LPSWQ-13?
DMTH6009LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6009LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6009LPSWQ-13?
For technical support, including DMTH6009LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6009LPSWQ-13 requirements.
6.How does Aetrix verify that DMTH6009LPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6009LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6009LPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6009LPSWQ-13?
All DMTH6009LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6009LPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6009LPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH6009LPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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