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Diodes Incorporated DMTH6010LK3-13

Part No.:
DMTH6010LK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH6010LK3-13.pdf
Description:
MOSFET N-CH 60V 14.8A/70A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,805

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Product details

Overview

DMTH6010LK3-13 from Diodes Incorporated is a 60V, 70A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, optimized for high-efficiency DC-DC converters and LED backlighting. It delivers 5.3 mΩ RDS(ON) at VGS = 10 V, supports 175°C junction operation, and features AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the DMTH6010LK3-13 datasheet, DMTH6010LK3-13 pinout, DMTH6010LK3-13 application, or DMTH6010LK3-13 equivalent, key selection criteria include its low gate charge (Qg = 41.3 nC @ 10 V), robust thermal resistance (RθJC = 2.5 °C/W), and body diode recovery performance (tRR = 35.4 ns, QRR = 38.2 nC).

Technical Context

This MOSFET employs advanced trench-gate silicon technology to simultaneously reduce conduction loss and switching loss. Its low RDS(ON) × Qgd figure-of-merit (FOM) enables high-frequency operation in synchronous buck converters while maintaining thermal stability up to TJ = +175°C.

The device integrates a fast-recovery body diode with 0.9–1.2 V forward voltage at 20 A and exhibits controlled avalanche capability (EAS = 20 mJ). Gate threshold voltage (1–3 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Withstands up to 60 V drain-source blocking voltage without breakdown.
RDS(ON)5.3 mΩ max @ VGS = 10 V, ID = 20 A - Enables <1 W conduction loss at 50 A in optimized PCB layout.
ID (TC = 25°C)70 A - Continuous drain current rating under infinite heatsink conditions.
Qg41.3 nC @ VGS = 10 V - Determines gate drive power requirement and switching speed in hard-switched topologies.
tRR35.4 ns - Limits reverse recovery loss and EMI generation during freewheeling in synchronous rectification.
TJ Range−55°C to +175°C - Supports operation in under-hood automotive and industrial power stages without derating.
RθJC2.5 °C/W - Enables direct thermal coupling to heatsink for high-power density designs.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for PCB heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal of N-channel MOSFETCommon return path for load current; connects to ground or low-side reference node.
Pin 2 (Gate)Control input for channel conductionReceives PWM signal; requires <41.3 nC charge to fully turn on at 10 V.
Pin 3 (Drain)High-side power input terminalConnected to input rail; electrically tied to large copper pour for thermal dissipation.
Exposed Pad (Drain)Thermal and electrical drain connectionPrimary heat transfer path to PCB; must be soldered to ≥4 cm² 2 oz copper area for rated 60 W dissipation.

Key Features

FeatureDesign Value
Low RDS(ON) × Qgd FOMEnables >95% efficiency in 500 kHz–1 MHz DC-DC converters with minimal switching loss trade-off.
AEC-Q101 qualifiedValidated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB).
175°C maximum junction temperaturePermits operation in sealed enclosures or high-ambient environments without active cooling.
Green, halogen/antimony-free constructionComplies with EU RoHS 2 and JEDEC J-STD-020 Level 1 moisture sensitivity for lead-free reflow.
Optimized body diode recoveryReduces shoot-through risk and EMI in synchronous rectifier configurations with fast tRR and low QRR.

Applications

Automotive DC-DC ConvertersIndustrial LED Backlight Drivers

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in ADAS camera modules and infotainment head units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in buck converter topology operating at 1 MHz.

Use Value: Low RDS(ON) minimizes conduction loss at 25 A load; 175°C rating avoids thermal shutdown in sealed enclosures.

Use Scenario: Constant-current LED driver for commercial signage with 48 V input and 36 V string output.

IC Role / Device Role / Timing Role: Low-side switching element in boost converter controlling 2 A LED string current.

Use Value: Fast body diode recovery reduces cross-conduction loss; TO252 thermal pad sustains 2.5 W dissipation at 70°C ambient.

Server VRM Power StagesTelecom Intermediate Bus Converters

Use Scenario: Multiphase CPU core voltage regulator delivering up to 120 A at 0.8 V in data center servers.

IC Role / Device Role / Timing Role: High-current phase-leg switch in 300–500 kHz interleaved buck stage.

Use Value: 5.3 mΩ RDS(ON) limits I²R loss to <3.3 W per phase at 70 A; low Qg eases gate driver sizing.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge LLC resonant topology.

Use Value: Robust avalanche energy rating (20 mJ) withstands transient overvoltage during startup and fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTP50N10PHigher RDS(ON) (10 mΩ @ 10 V), TO-220 package, no AEC-Q101 qualificationLacks automotive qualification and thermal performance; suitable only for non-automotive industrial useSelect when cost is primary constraint and 175°C operation or AEC-Q101 compliance is not required.
STL130N6F7Lower voltage rating (60 V same), but higher RDS(ON) (6.5 mΩ @ 10 V), smaller DFN5x6 packageDFN package limits power handling to ~40 W; unsuitable for 70 A continuous currentPrefer for space-constrained consumer applications where peak current ≤30 A and thermal budget allows.

Compared with IXTP50N10P and STL130N6F7, DMTH6010LK3-13 uniquely combines automotive qualification, 70 A continuous current capability, and industry-leading 5.3 mΩ RDS(ON) in a thermally optimized TO252 package-making it optimal for high-reliability, high-density power conversion where thermal margin and qualification matter.

Availability

DMTH6010LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial LED backlight drivers, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.

Supply support for DMTH6010LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.

The DMTH6010LK3-13 belongs to Diodes' high-voltage, high-current TrenchMOS™ power MOSFET product line, engineered for automotive and industrial power conversion systems demanding low loss, high thermal resilience, and AEC-Q101 reliability.

FAQ

What is the maximum continuous drain current for DMTH6010LK3-13 at 100°C case temperature?

The datasheet specifies 50 A continuous drain current at TC = +100°C, measured with the device mounted on an infinite heatsink and thermal couple attached to the package's bottom heat sink. This rating assumes proper PCB copper area and airflow; actual system-level current must be validated using RθJC = 2.5 °C/W and ambient thermal conditions.

Is DMTH6010LK3-13 suitable for synchronous rectification in a buck converter?

Yes. Its fast body diode (tRR = 35.4 ns, QRR = 38.2 nC) and low RDS(ON) enable efficient synchronous rectification. The device supports gate drive voltages down to 4.5 V (RDS(ON) = 12 mΩ), making it compatible with standard controller ICs and reducing need for level-shifting circuitry.

How does the TO252 package of DMTH6010LK3-13 improve thermal performance versus standard SO-8?

The TO252 package features an exposed drain pad that provides direct thermal path to PCB copper, achieving RθJC = 2.5 °C/W-over 5× better than typical SO-8 MOSFETs (~13–15 °C/W). This allows 60 W power dissipation with proper board layout, whereas SO-8 variants are typically limited to <3 W in standard FR-4 layouts.

Does DMTH6010LK3-13 have avalanche capability, and how is it rated?

Yes. It is rated for single-pulse avalanche energy EAS = 20 mJ with L = 0.1 mH, and avalanche current IAS = 20 A. These ratings are validated per JEDEC standards and support robustness against inductive switching transients in motor drives and power supplies without external snubbers.

DMTH6010LK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
14.8A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2090 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMTH6010LK3-13 FAQ

1.How can I place an order for DMTH6010LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LK3-13 reliable?

The price and inventory of DMTH6010LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LK3-13?

DMTH6010LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LK3-13?

For technical support, including DMTH6010LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LK3-13 requirements.

6.How does Aetrix verify that DMTH6010LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LK3-13?

All DMTH6010LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LK3-13 part is unused and in its original packaging.

Return procedure for DMTH6010LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6010LK3-13 Tags

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