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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6010LK3Q-13

Name: DMTH6010LK3Q-13
Brand: Diodes Incorporated
SKU: DMTH6010LK3Q-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6010LK3Q-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH6010LK3Q-13.pdf

Description:: MOSFET N-CH 60V 14.8A/70A TO252

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Product details

Overview

DMTH6010LK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 8 mΩ R_DS(ON) @ V_GS = 10 V and 70 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports automotive engine management, body control electronics, and DC-DC converters.

For engineers reviewing the DMTH6010LK3Q-13 datasheet, DMTH6010LK3Q-13 pinout, DMTH6010LK3Q-13 application, or DMTH6010LK3Q-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, low 2.5°C/W R_θJC, 41.3 nC total gate charge at 10 V, and AEC-Q101 qualification with PPAP support for automotive-grade reliability validation.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its 6.3–8 mΩ R_DS(ON) range at 10 V drive enables efficient high-current switching in compact layouts, while the 2090 pF C_iss and 38.5 pF Crss support controlled turn-on/turn-off timing under 10 V gate drive.

The device integrates a robust body diode with 35.4 ns reverse-recovery time and 38.2 nC Q_RR, enabling reliable synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design is anchored by a low 2.5°C/W junction-to-case resistance and 175°C maximum operating temperature, validated per IATF 16949 manufacturing standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands transient overvoltage up to 60 V in automotive 42 V systems without breakdown.
R_DS(ON) @ 10 V	6.3–8 mΩ - Enables ≤1.12 W conduction loss at 70 A, reducing heatsink requirements in space-constrained modules.
I_D Continuous @ T_C = 25°C	70 A - Supports high-power DC-DC stages and motor drivers without derating at case temperature.
R_θJC	2.5°C/W - Allows direct thermal coupling to PCB copper or heatsink for predictable junction temperature modeling.
Q_g @ 10 V	41.3 nC - Determines gate driver current requirement (~1.4 A peak for 30 ns rise time), critical for EMI-controlled switching.
E_AS	20 mJ - Specifies single-pulse avalanche energy handling, essential for inductive load switching reliability.
T_J Max	+175°C - Permits operation in under-hood environments where ambient exceeds 125°C.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad for low R_θJC. Molded green compound, UL 94V-0 rated, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; drives with 10 V for full R_DS(ON) optimization.
Pin 3 (Drain)	Power output	Exposed metal pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper area.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees robustness against unclamped inductive energy spikes in real-world automotive transients.
+175°C rated junction temperature	Enables placement near heat sources (e.g., engine bay, powertrain ECUs) without thermal derating.
Low 2090 pF input capacitance	Reduces gate drive power and improves switching speed stability across temperature and voltage ranges.
AEC-Q101 qualified + PPAP capable	Meets automotive quality system requirements for change control, traceability, and failure mode analysis.
Halogen- and antimony-free "Green" construction	Complies with EU RoHS 3 and automotive environmental directives without compromising thermal or electrical performance.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems with 12 V nominal supply and 60 V load dump transients.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation with precise 1–5 ms pulse width and fast turn-off to prevent dribble.

Use Value: 8 mΩ R_DS(ON) minimizes power loss during extended duty cycles; 100% UIS testing ensures survival during battery disconnect events.

Use Scenario: Seat/mirror position motor H-bridge half-bridge leg in 12 V automotive body domain.

IC Role / Device Role / Timing Role: Low-side switch enabling bidirectional motor control with PWM frequencies up to 20 kHz.

Use Value: 35.4 ns t_RR and low Q_RR reduce shoot-through risk and switching losses during direction reversal.

DC-DC Converters

Start-Stop Battery Management

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera and radar modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at 5–10 A loads.

Use Value: 0.9–1.2 V V_SD forward drop and low R_DS(ON) cut conduction loss by >40% vs. discrete diode solutions.

Use Scenario: Load switch isolating auxiliary battery circuits during engine cranking (up to 60 V surge).

IC Role / Device Role / Timing Role: High-reliability power path controller managing battery backup and load shedding.

Use Value: AEC-Q101 qualification and 175°C rating ensure uninterrupted operation during cold-cranking and hot-soak conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N6F7	60 V, 1.3 mΩ R_DS(ON) @ 10 V, TO263 package, higher current rating (130 A), but larger footprint and 150°C max T_J.	Preferred for higher-current inverters where board space allows larger package and lower R_DS(ON) justifies thermal margin trade-off.	Select when >100 A continuous current is required and thermal interface supports TO263 mounting.
IXTP50N10P	100 V, 10 mΩ R_DS(ON) @ 10 V, TO220 package, non-AEC-Q101, 175°C rated, no UIS production test.	Suitable for industrial 100 V bus applications where automotive qualification is not mandated.	Choose only for non-automotive designs needing higher V_DSS margin and accepting manual UIS validation.

Compared with STL130N6F7 and IXTP50N10P, DMTH6010LK3Q-13 uniquely balances AEC-Q101 compliance, TO252 compactness, 175°C operation, and production-tested UIS-making it optimal for space-constrained, high-reliability automotive power stages where qualification and thermal density are primary constraints.

Availability

DMTH6010LK3Q-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH6010LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMTH6010LK3Q belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-temperature, high-reliability power switching in engine control units, body electronics, and power conversion systems.

FAQ

What is the maximum gate-source voltage rating for DMTH6010LK3Q-13?

The absolute maximum gate-source voltage (V_GSS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full R_DS(ON) performance or 4.5 V for logic-level compatibility, with transient overshoot suppressed using gate resistors and clamping diodes.

Does DMTH6010LK3Q-13 require a heatsink in typical automotive applications?

No external heatsink is required if the PCB provides ≥1 inch² of 2 oz copper connected to the exposed drain pad, as specified in Note 6 of the datasheet. Under those conditions, the device achieves 60 W power dissipation at T_C = 25°C. In constrained layouts or elevated ambient temperatures, thermal simulation using the 2.5°C/W R_θJC is recommended.

Is DMTH6010LK3Q-13 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes-it supports 48 V bus applications with 60 V V_DSS margin and delivers 0.9–1.2 V body diode forward voltage at 20 A. Its 35.4 ns t_RR and low Q_RR minimize reverse-recovery losses, and AEC-Q101 qualification ensures suitability for safety-critical 48 V mild-hybrid systems.

How does the 100% UIS test impact field reliability in automotive use?

The 100% production UIS test subjects every unit to controlled 20 A avalanche current at 0.1 mH inductance, verifying robustness against real-world inductive switching failures. This eliminates latent weak units, directly improving field failure rates in engine control and motor drive applications where load dump and back-EMF events occur routinely.

DMTH6010LK3Q-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.8A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2090 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 31W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMTH6010LK3Q-13 FAQ

1.How can I place an order for DMTH6010LK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LK3Q-13 reliable?

The price and inventory of DMTH6010LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LK3Q-13?

DMTH6010LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LK3Q-13?

For technical support, including DMTH6010LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LK3Q-13 requirements.

6.How does Aetrix verify that DMTH6010LK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LK3Q-13?

All DMTH6010LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LK3Q-13 part is unused and in its original packaging.

Return procedure for DMTH6010LK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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