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Diodes Incorporated DMTH6010LPD-13
- Part No.:
- DMTH6010LPD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6010LPD-13.pdf
- Description:
- MOSFET 2N-CH 60V 13.1A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:6,279
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Product details
Overview
DMTH6010LPD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI®5060-8 (Type C) package, rated for 60V VDSS, 11mΩ RDS(ON) @ VGS = 10V, and 47.6A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and is qualified for automotive body control and engine management systems.
For engineers reviewing the DMTH6010LPD-13 datasheet, DMTH6010LPD-13 pinout, DMTH6010LPD-13 application, or DMTH6010LPD-13 equivalent, key selection criteria include its dual-channel layout, low RDS(ON) at 4.5V gate drive, 100% UIS-tested robustness, and AEC-Q101-compliant automotive qualification path (via DMTH6010LPDQ variant).
Technical Context
This dual N-channel MOSFET integrates two identical high-current silicon die in a thermally optimized PowerDI5060-8 package with exposed drain pads for low RθJC (4°C/W). Its gate threshold voltage (1–3V) enables compatibility with 3.3V and 5V logic-level controllers, while fast switching (tr = 8.8ns, tf = 7.4ns) supports high-frequency DC-DC converter topologies.
The device features low input capacitance (Ciss = 2615pF), low reverse transfer capacitance (Crss = 58pF), and tightly controlled Qg (20.3nC @ 4.5V, 40.2nC @ 10V), enabling efficient gate driving with minimal Miller-induced shoot-through risk in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V nominal bus systems with 25% headroom for transients. |
| RDS(ON) max @ 10V | 11mΩ - Enables <1.1W conduction loss at 10A, critical for thermal budget in compact power stages. |
| RDS(ON) max @ 4.5V | 16mΩ - Ensures usable on-resistance with standard 3.3V/5V microcontroller GPIOs without level-shifting. |
| ID continuous @ TC=25°C | 47.6A - Dual-channel rating allows parallel operation or independent high-current loads per channel. |
| TJ max | +175°C - Certified for under-hood automotive environments and industrial motor drives with elevated ambient temps. |
| EAS | 20mJ - Confirmed avalanche energy rating ensures survivability during inductive load switching faults. |
| Qg @ 10V | 40.2nC - Determines gate driver power requirement and switching loss trade-off in 100–500kHz converters. |
Pinout & Package
Package: PowerDI®5060-8 (Type C), surface-mount, thermally enhanced with exposed drain pad (D1/D2 tied internally to package tab). Molded green compound, RoHS- and halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 unless externally connected. |
| G1 | Gate of Channel 1 | Control input for first channel; requires ≤±20V drive; 0.67Ω gate resistance limits ringing. |
| D1 | Drain of Channel 1 | High-side connection point; bonded to exposed copper pad for thermal conduction and current routing. |
| S2 | Source of Channel 2 | Independent source node for second channel; enables dual synchronous rectification or load switching. |
| G2 | Gate of Channel 2 | Independent control terminal; matched timing characteristics to G1 ensure balanced dual-channel operation. |
| D2 | Drain of Channel 2 | Second high-side node; shares same thermal pad as D1 but electrically isolated; supports split-bus architectures. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Validated operation in under-hood automotive zones and industrial enclosures exceeding 125°C ambient. |
| 100% production UIS testing | Each unit passes unclamped inductive switching stress (L = 0.1mH, IAS = 20A), eliminating latent failure modes. |
| Low RDS(ON) at 4.5V | 16mΩ enables direct drive from automotive MCUs (e.g., Infineon TC3xx, NXP S32K) without gate drivers. |
| Low Crss/Ciss ratio | 58pF/2615pF = 2.2% - Reduces Miller feedback, improving noise immunity and hard-switching stability. |
| PowerDI5060-8 thermal design | RθJC = 4°C/W enables >30W dissipation with minimal heatsinking - ideal for space-constrained modules. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: Driving fuel injector solenoids and ignition coils in 12V/48V hybrid powertrains. IC Role / Device Role / Timing Role: High-side switch controlling inductive loads with precise PWM timing and fast turn-off to limit back-EMF voltage spikes. Use Value: 20mJ EAS rating prevents failure during coil de-energization; 175°C rating sustains reliability near exhaust manifolds. |
Use Scenario: Controlling LED headlamps, HVAC blowers, and window lift motors in centralized body ECUs. IC Role / Device Role / Timing Role: Dual-channel load switch managing independent 12V/24V actuators with diagnostic current sensing via RDS(ON). Use Value: Matched dual channels reduce BOM count; 16mΩ RDS(ON) @ 4.5V eliminates need for external level shifters in MCU-driven designs. |
| 48V DC-DC Converters | Automotive ADAS Power Supplies |
Use Scenario: Synchronous rectification in bidirectional buck-boost converters for 48V mild-hybrid systems. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectifier stage, requiring fast tf (7.4ns) and low Qgd (9.3nC) to minimize dead-time losses. Use Value: 8.5mΩ typical RDS(ON) @ 10V reduces conduction loss below 0.5W at 25A, improving efficiency >95% at full load. |
Use Scenario: Power distribution and sequencing for radar, camera, and domain controller subsystems. IC Role / Device Role / Timing Role: Dual-channel hot-swap and current-limit switch providing overcurrent protection and soft-start for sensitive ADAS sensors. Use Value: Independent S1/S2 terminals allow separate current monitoring per channel; 100% UIS ensures survival during sensor cable short events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6010LPDQ-13 | AEC-Q101 qualified version with PPAP support and IATF 16949 manufacturing; identical electrical specs. | Required for production automotive programs needing formal qualification documentation and change control. | Select when automotive OEM compliance (not just environmental rating) is mandatory. |
| DMN6010LKQ-13 | Same die in PowerDI3333 package; higher RθJA (70°C/W vs 53°C/W), lower ID (32A), no UIS test. | Suitable for cost-sensitive non-automotive applications where thermal margin is less constrained. | Choose only if board space is tighter and peak current <32A; not drop-in due to different footprint and thermal derating. |
Compared with DMTH6010LPD-13, the DMTH6010LPDQ-13 adds formal automotive qualification without electrical trade-offs, while the DMN6010LKQ-13 sacrifices thermal performance and ruggedness for smaller size - making the original optimal for high-reliability 48V power stages demanding both performance and proven robustness.
Availability
DMTH6010LPD-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and 48V DC-DC converters requiring stable component supply across automotive Tier-1 and industrial embedded programs.
Supply support for DMTH6010LPD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.
This part belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-ruggedness applications including engine control, body electronics, and 48V system power conversion.
FAQ
What is the maximum continuous drain current per channel at 100°C case temperature?
The DMTH6010LPD-13 supports 33.7A continuous drain current per channel at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerDI5060-8 package and must be validated against actual PCB copper area and airflow in the target application.
Does this MOSFET require a gate resistor for safe operation in a half-bridge configuration?
Yes - a gate resistor (typically 3–10Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet's dynamic test conditions use RG = 3Ω, and the device's 0.67Ω intrinsic gate resistance alone is insufficient to suppress oscillation in high-di/dt layouts.
Is the exposed drain pad electrically connected between D1 and D2?
No - D1 and D2 are electrically isolated terminals bonded to separate regions of the exposed copper pad. The pad serves as a common thermal path but does not short the two drains; external PCB layout must maintain isolation unless intentional paralleling is designed.
Can DMTH6010LPD-13 replace DMTH6010LPDQ-13 in an AEC-Q101-compliant design?
No - DMTH6010LPD-13 is not AEC-Q101 qualified. While it shares identical electrical and thermal specs, the Q-suffix variant undergoes additional stress testing, process controls, and documentation required for automotive production. Using the non-Q part voids AEC compliance.
DMTH6010LPD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 13.1A (Ta), 47.6A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2615pF @ 30V
- Power - Max:
- 2.8W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH6010LPD-13 FAQ
1.How can I place an order for DMTH6010LPD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6010LPD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6010LPD-13 reliable?
The price and inventory of DMTH6010LPD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPD-13 is usually 5 days.
3.What payment methods are accepted for DMTH6010LPD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6010LPD-13?
DMTH6010LPD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6010LPD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6010LPD-13?
For technical support, including DMTH6010LPD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPD-13 requirements.
6.How does Aetrix verify that DMTH6010LPD-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6010LPD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPD-13 meets industry standards.
7.What is the process for return or replacement of DMTH6010LPD-13?
All DMTH6010LPD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6010LPD-13 part is unused and in its original packaging.
Return procedure for DMTH6010LPD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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