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Diodes Incorporated DMTH6010LPDQ-13

Part No.:
DMTH6010LPDQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6010LPDQ-13.pdf
Description:
MOSFET 2N-CH 60V 13.1A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,056

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Product details

Overview

DMTH6010LPDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V VDSS, 11mΩ RDS(ON) @ 10V VGS, and 47.6A ID at TC = +25°C, qualified to AEC-Q101 and rated for continuous operation up to +175°C junction temperature. It is designed for high-reliability automotive power switching in engine management systems, body control modules, and DC-DC converters.

For engineers reviewing the DMTH6010LPDQ-13 datasheet, DMTH6010LPDQ-13 pinout, DMTH6010LPDQ-13 application, or DMTH6010LPDQ-13 equivalent, key selection criteria include its dual-channel layout in PowerDI®5060-8 (Type C), 100% production-tested UIS robustness, low gate charge (Qg = 40.2nC @ 10V), and thermal resistance of RθJC = 4°C/W.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single thermally enhanced surface-mount package with an exposed drain pad. Its gate threshold voltage (VGS(TH) = 1–3V) enables reliable turn-on with standard 4.5V or 10V logic-level drivers, while its low input capacitance (Ciss = 2615pF) and fast switching times (tD(ON) = 5.7ns, tF = 7.4ns) support high-frequency synchronous rectification.

The device features a fully characterized body diode with tRR = 34.5ns and QRR = 37.5nC, enabling efficient freewheeling in buck and half-bridge topologies. Its RDS(ON) remains stable across -55°C to +175°C (normalized variation <1.8×), supporting operation in under-hood environments without derating penalties.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Maximum blocking voltage before avalanche; supports 48V automotive bus with margin.
RDS(ON) max 11mΩ @ VGS = 10V, ID = 20A - Enables <1.2W conduction loss at 35A in high-current paths.
ID max 47.6A @ TC = +25°C - Sustains peak load currents in engine control units and DC-DC primary switches.
Qg 40.2nC @ VGS = 10V - Determines gate drive power requirement; compatible with standard 1A peak drivers.
RθJC 4°C/W - Junction-to-case thermal resistance enables direct heatsinking via exposed drain pad for high-power density designs.
tRR 34.5ns - Body diode reverse recovery time; minimizes switching loss and voltage overshoot in hard-switched topologies.
TJ max +175°C - Extended junction temperature rating allows operation in high-ambient under-hood locations without forced cooling.

Pinout & Package

Package: PowerDI®5060-8 (Type C), thermally enhanced surface-mount package with exposed drain pad on bottom side and 8-terminal leadframe. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
D1 Drain 1 High-current output node for Channel 1; electrically connected to exposed drain pad for thermal and electrical conduction.
S1 Source 1 Return path for Channel 1; isolated from D1 and G1 to enable high-side or low-side configuration.
G1 Gate 1 Control terminal for Channel 1; requires ≤±20V drive; low Rg = 0.67Ω enables fast edge rates.
S2 Source 2 Return path for Channel 2; independent of S1, allowing dual independent switch or half-bridge implementation.
D2 Drain 2 High-current output node for Channel 2; shares thermal pad with D1 but electrically isolated.
G2 Gate 2 Control terminal for Channel 2; fully decoupled from G1; supports asynchronous or complementary drive schemes.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
100% UIS tested in production Every unit subjected to unclamped inductive switching stress (IAS = 20A, EAS = 20mJ), ensuring field reliability in inductive load applications.
Low RDS(ON) @ 4.5V 16mΩ max at VGS = 4.5V enables compatibility with 5V microcontrollers and low-voltage gate drivers without level-shifting.
Thermally optimized PowerDI5060-8 Exposed drain pad and low RθJC = 4°C/W allow >37W power dissipation at TC = +25°C, reducing need for external heatsinks.
Halogen- and antimony-free "Green" construction Meets RoHS 3 (2015/863/EU); Br+Cl <1500ppm, Sb <1000ppm - compliant for global automotive supply chain requirements.

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive Body Control Module (BCM)

Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Dual-channel low-side driver controlling paired injectors with precise pulse-width modulation at up to 20kHz.

Use Value: Low RDS(ON) and fast tF = 7.4ns minimize energy loss during injector turn-off, improving fuel metering accuracy and reducing thermal stress.

Use Scenario: Load switching for interior lighting, window lift motors, and HVAC actuators in centralized BCM architecture.

IC Role / Device Role / Timing Role: Dual N-channel power switch providing independent channel control with integrated body diode for inductive kickback suppression.

Use Value: 100% UIS qualification ensures survival during repeated motor stall events; +175°C rating supports placement near heat-generating ECUs.

48V–12V Automotive DC-DC Converter Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectification in high-efficiency buck converter supplying 12V auxiliary power from 48V mild-hybrid battery.

IC Role / Device Role / Timing Role: Secondary-side dual N-MOSFET replacing Schottky diodes to reduce conduction losses and improve efficiency above 95%.

Use Value: RDS(ON) = 11mΩ @ 10V yields <0.4W loss per channel at 20A, enabling compact thermal design without airflow dependency.

Use Scenario: Half-bridge phase leg in three-phase EPS motor driver, handling bidirectional current up to 40A peak.

IC Role / Device Role / Timing Role: Dual-channel switch implementing one leg of H-bridge; body diode used for PWM freewheeling during dead-time intervals.

Use Value: tRR = 34.5ns and QRR = 37.5nC limit voltage spikes and cross-conduction risk, enhancing system EMC and MOSFET longevity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP50N10T Single-channel TO-220; higher RDS(ON) = 14mΩ @ 10V; no AEC-Q101 qualification. Requires two devices and larger PCB area; unsuitable for PPAP-managed automotive programs. Select only for non-automotive industrial prototypes where qualification and space are not constraints.
STL220N6LF8AG Single-die dual-channel PowerFLAT 5x6; RDS(ON) = 1.7mΩ @ 10V but rated only to +150°C; no UIS production test data published. Better conduction loss but lower thermal margin; lacks documented UIS robustness for inductive loads. Prefer for high-efficiency 12V systems with ambient <125°C; avoid in under-hood or high-inductance motor drives.

Compared with IXTP50N10T and STL220N6LF8AG, DMTH6010LPDQ-13 uniquely combines AEC-Q101 qualification, +175°C operation, production UIS testing, and dual-channel integration in a thermally optimized 8-pin package-making it the only option qualified for safety-critical, high-temperature automotive power switching.

Availability

DMTH6010LPDQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and 48V–12V DC-DC converters requiring stable component supply, long-term automotive lifecycle support, and PPAP-compliant sourcing.

Supply support for DMTH6010LPDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified facilities.

The DMTH6010LPDQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching applications demanding extended temperature operation, robustness against inductive transients, and zero-defect manufacturing traceability.

FAQ

What is the maximum continuous drain current for each channel at +100°C case temperature?

The DMTH6010LPDQ-13 supports 33.7A continuous drain current per channel at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case resistance and is validated under steady-state conditions with proper PCB copper thermal bias per Note 6.

Can the two channels be operated with independent gate signals in a half-bridge configuration?

Yes-the DMTH6010LPDQ-13 has fully isolated gate, source, and drain terminals for each channel (G1/S1/D1 and G2/S2/D2), enabling independent control. Its matched RDS(ON) and timing parameters allow use in half-bridge legs, though external shoot-through protection must be implemented via gate drive sequencing or dead-time control.

Is the exposed drain pad electrically connected between both channels?

Yes-the exposed drain pad is internally connected to both D1 and D2 terminals, forming a common high-current return path and thermal interface. This configuration requires a single large copper pour tied to system ground or power rail, and prohibits using the device in configurations requiring isolated drains.

Does the device meet JEDEC JESD22-A114 reliability standards for automotive temperature cycling?

While the datasheet confirms AEC-Q101 qualification-including temperature cycling (TC022), high-temperature operating life (HTOL), and unbiased highly accelerated stress test (uHAST)-specific JEDEC JESD22-A114 compliance is not cited. AEC-Q101 testing exceeds JESD22-A114 requirements in cycle count and temperature range, validating suitability for automotive under-hood deployment.

DMTH6010LPDQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
13.1A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs:
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2615pF @ 30V
Power - Max:
2.8W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6010LPDQ-13 FAQ

1.How can I place an order for DMTH6010LPDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LPDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LPDQ-13 reliable?

The price and inventory of DMTH6010LPDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPDQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LPDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LPDQ-13?

DMTH6010LPDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LPDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LPDQ-13?

For technical support, including DMTH6010LPDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPDQ-13 requirements.

6.How does Aetrix verify that DMTH6010LPDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LPDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPDQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LPDQ-13?

All DMTH6010LPDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LPDQ-13 part is unused and in its original packaging.

Return procedure for DMTH6010LPDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6010LPDQ-13 Tags

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