Diodes Incorporated DMTH6010LPDQ-13
- Part No.:
- DMTH6010LPDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6010LPDQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 13.1A PWRDI50
- Quantity:
- Payment:

- Shipping:

Inventory:18,056
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Product details
Overview
DMTH6010LPDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V VDSS, 11mΩ RDS(ON) @ 10V VGS, and 47.6A ID at TC = +25°C, qualified to AEC-Q101 and rated for continuous operation up to +175°C junction temperature. It is designed for high-reliability automotive power switching in engine management systems, body control modules, and DC-DC converters.
For engineers reviewing the DMTH6010LPDQ-13 datasheet, DMTH6010LPDQ-13 pinout, DMTH6010LPDQ-13 application, or DMTH6010LPDQ-13 equivalent, key selection criteria include its dual-channel layout in PowerDI®5060-8 (Type C), 100% production-tested UIS robustness, low gate charge (Qg = 40.2nC @ 10V), and thermal resistance of RθJC = 4°C/W.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single thermally enhanced surface-mount package with an exposed drain pad. Its gate threshold voltage (VGS(TH) = 1–3V) enables reliable turn-on with standard 4.5V or 10V logic-level drivers, while its low input capacitance (Ciss = 2615pF) and fast switching times (tD(ON) = 5.7ns, tF = 7.4ns) support high-frequency synchronous rectification.
The device features a fully characterized body diode with tRR = 34.5ns and QRR = 37.5nC, enabling efficient freewheeling in buck and half-bridge topologies. Its RDS(ON) remains stable across -55°C to +175°C (normalized variation <1.8×), supporting operation in under-hood environments without derating penalties.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum blocking voltage before avalanche; supports 48V automotive bus with margin. |
| RDS(ON) max | 11mΩ @ VGS = 10V, ID = 20A - Enables <1.2W conduction loss at 35A in high-current paths. |
| ID max | 47.6A @ TC = +25°C - Sustains peak load currents in engine control units and DC-DC primary switches. |
| Qg | 40.2nC @ VGS = 10V - Determines gate drive power requirement; compatible with standard 1A peak drivers. |
| RθJC | 4°C/W - Junction-to-case thermal resistance enables direct heatsinking via exposed drain pad for high-power density designs. |
| tRR | 34.5ns - Body diode reverse recovery time; minimizes switching loss and voltage overshoot in hard-switched topologies. |
| TJ max | +175°C - Extended junction temperature rating allows operation in high-ambient under-hood locations without forced cooling. |
Pinout & Package
Package: PowerDI®5060-8 (Type C), thermally enhanced surface-mount package with exposed drain pad on bottom side and 8-terminal leadframe. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain 1 | High-current output node for Channel 1; electrically connected to exposed drain pad for thermal and electrical conduction. |
| S1 | Source 1 | Return path for Channel 1; isolated from D1 and G1 to enable high-side or low-side configuration. |
| G1 | Gate 1 | Control terminal for Channel 1; requires ≤±20V drive; low Rg = 0.67Ω enables fast edge rates. |
| S2 | Source 2 | Return path for Channel 2; independent of S1, allowing dual independent switch or half-bridge implementation. |
| D2 | Drain 2 | High-current output node for Channel 2; shares thermal pad with D1 but electrically isolated. |
| G2 | Gate 2 | Control terminal for Channel 2; fully decoupled from G1; supports asynchronous or complementary drive schemes. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% UIS tested in production | Every unit subjected to unclamped inductive switching stress (IAS = 20A, EAS = 20mJ), ensuring field reliability in inductive load applications. |
| Low RDS(ON) @ 4.5V | 16mΩ max at VGS = 4.5V enables compatibility with 5V microcontrollers and low-voltage gate drivers without level-shifting. |
| Thermally optimized PowerDI5060-8 | Exposed drain pad and low RθJC = 4°C/W allow >37W power dissipation at TC = +25°C, reducing need for external heatsinks. |
| Halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU); Br+Cl <1500ppm, Sb <1000ppm - compliant for global automotive supply chain requirements. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Dual-channel low-side driver controlling paired injectors with precise pulse-width modulation at up to 20kHz. Use Value: Low RDS(ON) and fast tF = 7.4ns minimize energy loss during injector turn-off, improving fuel metering accuracy and reducing thermal stress. |
Use Scenario: Load switching for interior lighting, window lift motors, and HVAC actuators in centralized BCM architecture. IC Role / Device Role / Timing Role: Dual N-channel power switch providing independent channel control with integrated body diode for inductive kickback suppression. Use Value: 100% UIS qualification ensures survival during repeated motor stall events; +175°C rating supports placement near heat-generating ECUs. |
| 48V–12V Automotive DC-DC Converter | Electric Power Steering (EPS) Motor Phase Switch |
Use Scenario: Synchronous rectification in high-efficiency buck converter supplying 12V auxiliary power from 48V mild-hybrid battery. IC Role / Device Role / Timing Role: Secondary-side dual N-MOSFET replacing Schottky diodes to reduce conduction losses and improve efficiency above 95%. Use Value: RDS(ON) = 11mΩ @ 10V yields <0.4W loss per channel at 20A, enabling compact thermal design without airflow dependency. |
Use Scenario: Half-bridge phase leg in three-phase EPS motor driver, handling bidirectional current up to 40A peak. IC Role / Device Role / Timing Role: Dual-channel switch implementing one leg of H-bridge; body diode used for PWM freewheeling during dead-time intervals. Use Value: tRR = 34.5ns and QRR = 37.5nC limit voltage spikes and cross-conduction risk, enhancing system EMC and MOSFET longevity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP50N10T | Single-channel TO-220; higher RDS(ON) = 14mΩ @ 10V; no AEC-Q101 qualification. | Requires two devices and larger PCB area; unsuitable for PPAP-managed automotive programs. | Select only for non-automotive industrial prototypes where qualification and space are not constraints. |
| STL220N6LF8AG | Single-die dual-channel PowerFLAT 5x6; RDS(ON) = 1.7mΩ @ 10V but rated only to +150°C; no UIS production test data published. | Better conduction loss but lower thermal margin; lacks documented UIS robustness for inductive loads. | Prefer for high-efficiency 12V systems with ambient <125°C; avoid in under-hood or high-inductance motor drives. |
Compared with IXTP50N10T and STL220N6LF8AG, DMTH6010LPDQ-13 uniquely combines AEC-Q101 qualification, +175°C operation, production UIS testing, and dual-channel integration in a thermally optimized 8-pin package-making it the only option qualified for safety-critical, high-temperature automotive power switching.
Availability
DMTH6010LPDQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and 48V–12V DC-DC converters requiring stable component supply, long-term automotive lifecycle support, and PPAP-compliant sourcing.
Supply support for DMTH6010LPDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified facilities.
The DMTH6010LPDQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching applications demanding extended temperature operation, robustness against inductive transients, and zero-defect manufacturing traceability.
FAQ
What is the maximum continuous drain current for each channel at +100°C case temperature?
The DMTH6010LPDQ-13 supports 33.7A continuous drain current per channel at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case resistance and is validated under steady-state conditions with proper PCB copper thermal bias per Note 6.
Can the two channels be operated with independent gate signals in a half-bridge configuration?
Yes-the DMTH6010LPDQ-13 has fully isolated gate, source, and drain terminals for each channel (G1/S1/D1 and G2/S2/D2), enabling independent control. Its matched RDS(ON) and timing parameters allow use in half-bridge legs, though external shoot-through protection must be implemented via gate drive sequencing or dead-time control.
Is the exposed drain pad electrically connected between both channels?
Yes-the exposed drain pad is internally connected to both D1 and D2 terminals, forming a common high-current return path and thermal interface. This configuration requires a single large copper pour tied to system ground or power rail, and prohibits using the device in configurations requiring isolated drains.
Does the device meet JEDEC JESD22-A114 reliability standards for automotive temperature cycling?
While the datasheet confirms AEC-Q101 qualification-including temperature cycling (TC022), high-temperature operating life (HTOL), and unbiased highly accelerated stress test (uHAST)-specific JEDEC JESD22-A114 compliance is not cited. AEC-Q101 testing exceeds JESD22-A114 requirements in cycle count and temperature range, validating suitability for automotive under-hood deployment.
DMTH6010LPDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 13.1A (Ta), 47.6A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2615pF @ 30V
- Power - Max:
- 2.8W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH6010LPDQ-13 FAQ
1.How can I place an order for DMTH6010LPDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6010LPDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6010LPDQ-13 reliable?
The price and inventory of DMTH6010LPDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPDQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6010LPDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6010LPDQ-13?
DMTH6010LPDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6010LPDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6010LPDQ-13?
For technical support, including DMTH6010LPDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPDQ-13 requirements.
6.How does Aetrix verify that DMTH6010LPDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6010LPDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPDQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6010LPDQ-13?
All DMTH6010LPDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6010LPDQ-13 part is unused and in its original packaging.
Return procedure for DMTH6010LPDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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