Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH6010LPDWQ-13

Part No.:
DMTH6010LPDWQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6010LPDWQ-13.pdf
Description:
MOSFET 2N-CH 60V 13.1A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,410

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH6010LPDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 60V VDSS, 11mΩ RDS(ON) @ 10V, and 47.6A ID at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive power switching in engine management and DC-DC converters.

For engineers reviewing the DMTH6010LPDWQ-13 datasheet, DMTH6010LPDWQ-13 pinout, DMTH6010LPDWQ-13 application, or DMTH6010LPDWQ-13 equivalent, this part supports high-temperature operation up to +175°C, features wettable flanks for automated optical inspection, and delivers low gate charge (40.2nC @ 10V) for fast, efficient switching in space-constrained automotive modules.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices in a single thermally enhanced PowerDI5060-8/SWP package with exposed drain pads for low RθJC (4°C/W). Its 100% production-tested UIS capability ensures robustness against inductive load transients in automotive subsystems.

The device exhibits gate threshold voltage of 1–3V, low input capacitance (Ciss = 2615pF), and fast switching times (tD(ON) = 5.7ns, tF = 7.4ns), enabling high-frequency synchronous rectification and PWM control in 12V/48V vehicle architectures.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Withstands peak drain-source voltage in 48V automotive systems with margin for load dump transients.
RDS(ON) max 11mΩ @ VGS = 10V - Enables <1W conduction loss at 30A, critical for thermal management in sealed ECUs.
ID max 47.6A @ TC = +25°C - Supports high-current motor drivers and battery disconnect circuits without external heatsinking.
TJ max +175°C - Certified for under-hood environments including engine bay and transmission control units.
Qg 40.2nC @ VGS = 10V - Reduces gate driver power demand and enables use with low-power MCU GPIOs in compact designs.
EAS 20mJ - Guarantees survivability during unclamped inductive switching events in solenoid and relay drive applications.
Ciss 2615pF - Limits Miller-induced shoot-through risk in half-bridge configurations operating above 100kHz.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pads on bottom side and wettable flank terminals for AOI compatibility.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D1) Drain of Channel 1 Primary high-current output node tied to PCB copper pour for thermal dissipation and low-inductance routing.
Pin 2 (S1) Source of Channel 1 Reference node for gate drive and current sensing; connects to low-side shunt or controller ground plane.
Pin 3 (G1) Gate of Channel 1 High-impedance control input requiring <40.2nC charge; routed away from noisy power traces to prevent false turn-on.
Pin 4 (D2) Drain of Channel 2 Independent high-current path; electrically isolated from D1 but thermally coupled via shared exposed pad.
Pin 5 (S2) Source of Channel 2 Separate return path enabling independent channel control in H-bridge or dual-phase converter topologies.
Pin 6 (G2) Gate of Channel 2 Isolated gate input allowing asynchronous or complementary drive schemes without cross-talk risk.
Pins 7–8 (Exposed Drain Pads) Common Drain Thermal Plane Integrated thermal interface connecting both channels to PCB thermal mass; requires solder mask defined stencil for full wetting.

Key Features

Feature Design Value
AEC-Q101 qualification & PPAP support Validated for automotive production release with full change control, traceability, and IATF 16949 manufacturing.
100% UIS tested in production Each unit verified for 20mJ avalanche energy, eliminating field failures from inductive kickback in starter relays or fuel injectors.
Wettable flank terminals Side-wall plating enables automated optical inspection of solder joint integrity-critical for zero-defect automotive assembly lines.
+175°C continuous operation Rated junction temperature allows placement near heat sources (e.g., exhaust manifolds, inverters) without derating or forced cooling.
Lead-free, halogen-free, antimony-free Complies with RoHS 3 (2015/863/EU) and automotive green standards (<900ppm Br/Cl, <1000ppm Sb), supporting end-of-life recycling.

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive Body Control Module (BCM)

Use Scenario: High-speed switching of 12V fuel injectors with 2–5ms pulse widths and 10A peak current.

IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling paired injectors; one channel drives injector A, the other drives injector B in sequential firing mode.

Use Value: 11mΩ RDS(ON) minimizes I²R heating during extended idle cycles, while 175°C rating ensures reliability in engine bay ambient up to 125°C.

Use Scenario: Power distribution to LED headlamps, window lift motors, and HVAC actuators in centralized BCM architecture.

IC Role / Device Role / Timing Role: Dual N-channel load switch providing independent ON/OFF control and current limiting for two 15A loads.

Use Value: Wettable flanks enable 100% AOI coverage on densely populated BCM PCBs; 20mJ EAS prevents failure during motor stall events.

48V Mild Hybrid DC-DC Converter Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectification in 48V-to-12V bidirectional buck-boost converters with >200kHz switching frequency.

IC Role / Device Role / Timing Role: Dual-channel high-efficiency rectifier replacing diodes; each channel handles one phase of interleaved topology.

Use Value: Low Ciss (2615pF) and fast tF (7.4ns) reduce switching losses by >35% vs. legacy MOSFETs, improving converter efficiency to >96%.

Use Scenario: Half-bridge leg in three-phase EPS inverter driving 300W brushless motor with regenerative braking.

IC Role / Device Role / Timing Role: Dual N-channel switch implementing low-side leg per phase; two devices used per inverter (six total).

Use Value: Matched RDS(ON) between channels ensures balanced current sharing; 4°C/W RθJC enables direct mounting to aluminum heatsink without thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon BSC028N06NS3 G 60V, 2.8mΩ @ 10V, PowerSO-12 package (larger footprint, higher RθJA = 40°C/W) Better RDS(ON) but lacks wettable flanks and AEC-Q101 documentation for PPAP submission Preferred where ultra-low conduction loss dominates over AOI requirements and thermal constraints allow larger package.
ON Semiconductor NTMFD4829NT1G 60V, 10.5mΩ @ 10V, PowerFLAT 5x6 package (no wettable flanks, RθJC = 5.5°C/W) Same AEC-Q101 grade but no production UIS testing; lower thermal performance limits high-pulse-current use Suitable for cost-sensitive BCM applications without aggressive inductive loads or tight thermal budgets.

Compared with BSC028N06NS3G and NTMFD4829NT1G, DMTH6010LPDWQ-13 uniquely combines wettable flanks, 100% UIS screening, and 4°C/W RθJC in a compact 5.0×6.0mm outline-making it optimal for safety-critical, thermally constrained automotive modules requiring zero-defect assembly and transient robustness.

Availability

DMTH6010LPDWQ-13 is available at Aetrix Electronics and suitable for engine control units, body control modules, and 48V DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH6010LPDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101 compliance, under-hood thermal resilience, and zero-defect manufacturability in Tier 1 automotive electronics.

FAQ

What is the maximum allowable gate-source voltage for DMTH6010LPDWQ-13?

The absolute maximum VGS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±15V risks permanent gate oxide damage, especially at elevated temperatures. For reliable 12V system designs, a 10V gate drive is recommended to balance RDS(ON) and safety margin.

Does DMTH6010LPDWQ-13 support paralleling of its two channels for higher current?

No-channels are electrically isolated but share a common thermal pad; paralleling would cause thermal runaway due to mismatched RDS(ON) drift with temperature. Each channel must be driven independently with separate gate resistors and current-sense paths per automotive functional safety requirements.

Can DMTH6010LPDWQ-13 replace single-channel MOSFETs in existing designs?

Yes, when layout accommodates the PowerDI5060-8/SWP footprint and thermal design accounts for dual-channel power dissipation. Pin 1–3 serve Channel 1, Pins 4–6 serve Channel 2; unused channel must have G/S tied together and D left floating or grounded-not shorted-to avoid unintended conduction.

What is the significance of "PowerDI5060-8/SWP (Type UXD)" in the ordering code?

"SWP" denotes "Small Outline Wettable Flank Package", and "UXD" is Diodes' internal type designation for this specific mold compound, leadframe geometry, and terminal finish. It confirms the device meets J-STD-020 moisture sensitivity Level 1 and MIL-STD-202 solderability requirements for automotive reflow processes.

DMTH6010LPDWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
13.1A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs:
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2615pF @ 30V
Power - Max:
2.8W (Ta), 37.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type UXD)

DMTH6010LPDWQ-13 FAQ

1.How can I place an order for DMTH6010LPDWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LPDWQ-13 reliable?

The price and inventory of DMTH6010LPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPDWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LPDWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPDWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LPDWQ-13?

DMTH6010LPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LPDWQ-13?

For technical support, including DMTH6010LPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPDWQ-13 requirements.

6.How does Aetrix verify that DMTH6010LPDWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPDWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LPDWQ-13?

All DMTH6010LPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPDWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LPDWQ-13 part is unused and in its original packaging.

Return procedure for DMTH6010LPDWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6010LPDWQ-13 Tags

  • DMTH6010LPDWQ-13
  • DMTH6010LPDWQ-13 PDF
  • DMTH6010LPDWQ-13 Datasheet
  • DMTH6010LPDWQ-13 Specifications
  • DMTH6010LPDWQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH6010LPDWQ-13
  • Buy DMTH6010LPDWQ-13
  • DMTH6010LPDWQ-13 Price
  • DMTH6010LPDWQ-13 Distributor
  • DMTH6010LPDWQ-13 Supplier
  • DMTH6010LPDWQ-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER