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Diodes Incorporated DMTH6010LPS-13

Part No.:
DMTH6010LPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6010LPS-13.pdf
Description:
MOSFET N-CH 60V 13.5A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,919

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Product details

Overview

DMTH6010LPS-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency load switching and DC-DC conversion with 5.4 mΩ RDS(ON) @ VGS = 10V, 175°C rated junction temperature, and 100% production-tested UIS robustness.

For engineers reviewing the DMTH6010LPS-13 datasheet, DMTH6010LPS-13 pinout, DMTH6010LPS-13 application, or DMTH6010LPS-13 equivalent, key selection criteria include low on-resistance at 4.5V gate drive (8.3 mΩ), fast switching (tD(OFF) = 23.4 ns), thermal resistance RθJC = 1.1 °C/W, and automotive-qualified variant availability (DMTH6010LPSQ).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(ON) while maintaining controlled gate charge (Qg = 41.3 nC @ 10V) and minimized reverse transfer capacitance (Crss = 38.5 pF), enabling high-frequency synchronous rectification and efficient power delivery in compact layouts.

Its 175°C maximum junction temperature rating, combined with exposed drain pad thermal path (RθJC = 1.1 °C/W), supports operation in thermally constrained environments such as notebook battery management systems and industrial DC-DC modules where sustained 85A continuous current at TC = +100°C is required.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands up to 60V drain-source blocking voltage without breakdown, suitable for 48V system rails and transient-tolerant battery inputs.
RDS(ON) 5.4 mΩ @ VGS = 10V - Enables <1W conduction loss at 20A, critical for high-current load switches and primary-side FETs in buck converters.
ID (TC = 25°C) 100 A - Continuous drain current rating defined at case temperature, directly tied to PCB copper area and heatsinking capability.
Qg 41.3 nC @ VGS = 10V - Determines gate driver power requirement and switching transition time in hard-switched topologies.
tD(OFF) 23.4 ns - Short turn-off delay enables >1 MHz switching in high-frequency DC-DC designs while minimizing overlap losses.
EAS 20 mJ - Avalanche energy rating validated per JEDEC AEC-Q standards, ensuring reliability under inductive switching stress.
TJ(max) +175°C - Enables operation in high-ambient environments (e.g., laptop chassis near CPU/GPU) without derating.

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2–5 and 7–8 are internally connected to drain), optimized for low-inductance layout and high-power dissipation via bottom-side thermal pad soldering.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate (G) Control input; requires ≤±20V gate-source voltage; low gate resistance (Rg = 0.59 Ω typical) minimizes ringing during fast switching.
Pins 2–5, 7–8 Drain (D) High-current power output node; all eight terminals electrically tied to internal drain structure and exposed thermal pad for simultaneous conduction and heat extraction.
Pin 6 Source (S) Reference node for gate drive and current sensing; isolated from drain to enable high-side or low-side configuration with proper level-shifting.

Key Features

Feature Design Value
100% UIS tested in production Guarantees avalanche ruggedness across full production lot-no screening failures expected in inductive load switching applications.
Low RDS(ON) @ 4.5V 8.3 mΩ enables logic-level gate drive compatibility with 5V/3.3V controllers, reducing need for external gate drivers in portable systems.
Thermal resistance RθJC 1.1 °C/W allows 136W power dissipation at TC = 25°C-supports high-current operation with minimal heatsink area on PCB.
JEDEC-qualified reliability Complies with AEC-Q stress test standards, confirming suitability for automotive-grade power management despite non-automotive part number suffix.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets global environmental compliance requirements for consumer and industrial end equipment.

Applications

Notebook Battery Protection Circuits High-Density DC-DC Converters

Use Scenario: Bidirectional battery protection IC interface controlling charge/discharge paths in ultrabooks with dual-cell Li-ion packs.

IC Role / Device Role / Timing Role: Low-side main switch handling up to 85A discharge current, with fast turn-off (tF = 9.7 ns) to interrupt fault currents within µs.

Use Value: 5.4 mΩ RDS(ON) reduces power loss by >30% vs. legacy 12 mΩ devices, extending runtime and lowering thermal stress on battery FET array.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V intermediate bus converter operating at 500 kHz in telecom server power supplies.

IC Role / Device Role / Timing Role: High-current, low-loss power switch with Ciss = 2090 pF and Qgd/Qgs ratio of 1.47, supporting zero-voltage switching (ZVS) soft-start behavior.

Use Value: 38.5 pF Crss minimizes Miller-induced shoot-through risk, enabling stable 500 kHz operation without complex gate drive compensation.

Industrial Load Switching Modules Automotive Body Control Units (BCU)

Use Scenario: Hot-swap controller for 24V industrial PLC I/O modules requiring inrush current limiting and overcurrent shutdown.

IC Role / Device Role / Timing Role: High-side load switch with integrated body diode (VSD = 0.8 V typ) supporting reverse-polarity protection and controlled turn-on slew rate.

Use Value: 175°C rating ensures uninterrupted operation in sealed enclosures with ambient temperatures up to 105°C, eliminating thermal derating penalties.

Use Scenario: Power distribution switch for LED headlamp drivers and HVAC actuators in passenger vehicles, using DMTH6010LPSQ automotive variant.

IC Role / Device Role / Timing Role: Robust power FET with 20 mJ EAS and AEC-Q qualification, handling load dump transients and motor stall conditions without failure.

Use Value: Production-tested UIS guarantees >100,000 cycles of 100A inductive switching-critical for BCU relay replacement in safety-critical subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH6010LPSQ Identical electrical specs but qualified to AEC-Q200 Grade 1 (−40°C to +125°C ambient); same PowerDI5060-8 package and marking code H6010LS. Required for automotive production programs needing PPAP documentation and extended reliability testing; not needed for commercial notebook or industrial use. Select DMTH6010LPSQ only when automotive qualification is mandated-no performance trade-off, but higher cost and longer lead time.
IPB180N04S4-02 40V VDSS, 180A ID, 2.0 mΩ RDS(ON) @ 10V, TO-263-7 package; higher current but lower voltage rating and larger footprint. Suitable for 12V/24V high-current inverters where 60V rating is unnecessary; incompatible with 48V systems due to VDSS margin. Choose only if system voltage ≤32V and board space allows TO-263; otherwise, DMTH6010LPS-13 offers superior 60V margin and smaller PowerDI5060-8 footprint.

Compared with DMTH6010LPSQ, the base part lacks automotive certification but delivers identical electrical and thermal performance for commercial applications; versus IPB180N04S4-02, it trades peak current for higher voltage rating and 40% smaller PCB area-ideal for space-constrained 48V power stages.

Availability

DMTH6010LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, high-density DC-DC converters, and industrial load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMTH6010LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the U.S., serving industrial, computing, and consumer markets.

The DMTH6010LPS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power switching in thermally demanding applications-emphasizing low RDS(ON), robust avalanche capability, and JEDEC-compliant reliability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6010LPS-13 supports 75A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 100A rating at TC = +25°C, based on RθJC = 1.1 °C/W and junction temperature limit of +175°C.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor (typically 3–10 Ω) is recommended to dampen ringing caused by low gate resistance (0.59 Ω typical) and parasitic inductance. The datasheet's switching time test condition (RG = 3 Ω) confirms this practice; omitting it risks overshoot, shoot-through, or EMI in high-dI/dt circuits.

Can DMTH6010LPS-13 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate drive paths, Kelvin source connections, and identical thermal mounting for each device. Its positive RDS(ON) temperature coefficient (Figure 5) enables current sharing, but mismatched parasitics may cause imbalance above 50A total current.

Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the PowerDI5060-8 is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1 (MSL-1), meaning unlimited floor life at ≤30°C/60% RH. Peak reflow temperature must not exceed 260°C, and thermal pad soldering must follow Diodes' recommended stencil design (0.125 mm thickness, 85% area coverage).

DMTH6010LPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2090 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta), 136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6010LPS-13 FAQ

1.How can I place an order for DMTH6010LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LPS-13 reliable?

The price and inventory of DMTH6010LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LPS-13?

DMTH6010LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LPS-13?

For technical support, including DMTH6010LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPS-13 requirements.

6.How does Aetrix verify that DMTH6010LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LPS-13?

All DMTH6010LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LPS-13 part is unused and in its original packaging.

Return procedure for DMTH6010LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6010LPS-13 Tags

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