Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH6010LPSQ-13

Part No.:
DMTH6010LPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6010LPSQ-13.pdf
Description:
MOSFET N-CH 60V 13.5A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,294

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH6010LPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 100A at TC = +25°C, with RDS(ON) = 6.4 mΩ @ VGS = 10V and 8.3 mΩ @ VGS = 4.5V, operating up to +175°C junction temperature - deployed in automotive engine management and DC-DC converters.

For engineers reviewing the DMTH6010LPSQ-13 datasheet, DMTH6010LPSQ-13 pinout, DMTH6010LPSQ-13 application, or DMTH6010LPSQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, low gate charge (Qg = 41.3 nC @ 10V), and thermal resistance RθJC = 1.1 °C/W for high-power automotive switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its 175°C rating enables operation in under-hood applications without derating, while the integrated body diode supports synchronous rectification in buck converters.

The device features low input capacitance (Ciss = 2090 pF) and fast turn-on/turn-off times (tD(ON) = 5.7 ns, tD(OFF) = 23.4 ns), enabling efficient high-frequency switching up to 500 kHz in isolated DC-DC topologies. Its 0.2–1.5 Ω gate resistance ensures controllable dV/dt and EMI suppression.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands transient overvoltage spikes up to 48 V in 12 V automotive systems without breakdown.
RDS(ON) @ 10V 6.4 mΩ max - Enables <1.3 W conduction loss at 20 A, critical for thermally constrained engine control modules.
RDS(ON) @ 4.5V 8.3 mΩ max - Ensures reliable turn-on with standard 5 V logic-level gate drivers in body electronics.
ID (TC = 25°C) 100 A - Supports high-current loads such as fuel pump drivers or HVAC motor controllers.
EAS 20 mJ - Sustains repetitive inductive energy spikes during load dump events without failure.
RθJC 1.1 °C/W - Allows direct thermal coupling to heatsink or PCB copper for >100 W power dissipation capability.
tRR 35.4 ns - Minimizes reverse recovery losses in synchronous rectifier configurations.

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad for low thermal resistance and high current handling. Molded green compound (UL 94V-0), matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6 Drain (D) Multiple parallel drain terminals reduce current density and parasitic inductance; connected to exposed thermal pad for optimal heat transfer.
7 Gate (G) Single gate input with low Rg (0.59 Ω typ) for precise switching control and reduced gate drive power.
8 Source (S) Source reference terminal; tied to PCB ground plane to minimize common-source inductance in high-dI/dt switching.

Key Features

Feature Design Value
AEC-Q101 qualified + PPAP support Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero defect screening.
100% UIS tested in production Every unit passes unclamped inductive switching stress test (IAS = 20 A, EAS = 20 mJ), ensuring field reliability in motor drive transients.
+175°C continuous operation Enables placement near hot zones (e.g., exhaust manifolds, power inverters) without thermal throttling or derating.
Low Qg / Qgd ratio Qgd/Qg = 8.8/41.3 ≈ 21% - Reduces Miller effect, improves noise immunity, and enables stable high-speed switching.
Halogen- and antimony-free "Green" Meets EU RoHS 3 and automotive environmental compliance: Br+Cl <1500 ppm, Sb <1000 ppm.

Applications

Engine Management Systems Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems.

IC Role / Device Role / Timing Role: Power switch controlling 12 V, 5–10 A pulsed solenoid current with 1–2 ms on-time and <100 ns rise/fall.

Use Value: Low RDS(ON) minimizes voltage drop across injector coil, ensuring consistent fuel metering; 175°C rating prevents thermal shutdown during extended idling.

Use Scenario: Smart power distribution for lighting and window lift actuators in centralized BCMs.

IC Role / Device Role / Timing Role: Load switch enabling/disabling 12 V outputs with diagnostics, supporting PWM dimming and short-circuit protection.

Use Value: Fast switching (tF = 9.7 ns) enables smooth LED dimming; low Coss reduces capacitive turn-off losses during fault detection cycles.

Automotive DC-DC Converters Start-Stop Battery Management

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid systems.

IC Role / Device Role / Timing Role: High-efficiency power stage switch operating at 200–300 kHz with 50% duty cycle and 30 A peak current.

Use Value: Low Qg (41.3 nC) and fast tR/tF reduce switching losses by >15% vs. legacy MOSFETs; low RDS(ON) cuts conduction loss at high load.

Use Scenario: Isolation switch between starter battery and auxiliary Li-ion buffer in intelligent start-stop systems.

IC Role / Device Role / Timing Role: High-current, fail-safe disconnect switch rated for 100 A continuous and 400 A pulsed (10 µs) load dump surges.

Use Value: 100% UIS qualification ensures survival during cranking transients; exposed drain pad enables direct mounting to chassis ground for lowest possible RDS(ON).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7AG 60 V, 220 A, RDS(ON) = 2.2 mΩ @ 10 V; PowerFLAT 5x6 package; RθJC = 0.7 °C/W. Higher current rating but larger footprint; requires more gate drive energy (Qg = 110 nC). Prefer when >150 A peak current or sub-1 °C/W thermal resistance is required; not pin-compatible.
IXTP110N065X4 65 V, 110 A, RDS(ON) = 4.2 mΩ @ 10 V; TO-220 package; RθJC = 0.65 °C/W; non-AEC-Q101. Through-hole mounting; lacks automotive qualification and PPAP support. Acceptable for industrial prototypes or non-safety-critical designs where AEC-Q101 is not mandated.

Compared with STL220N6F7AG and IXTP110N065X4, DMTH6010LPSQ-13 offers optimal balance of AEC-Q101 compliance, compact PowerDI5060-8 footprint, and validated UIS robustness - making it the preferred choice for production automotive ECUs where space, qualification, and transient immunity are jointly constrained.

Availability

DMTH6010LPSQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and automotive DC-DC converters requiring stable component supply, full traceability, and long-term lifecycle assurance.

Supply support for DMTH6010LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for under-hood and safety-critical vehicle subsystems demanding AEC-Q101 qualification, extreme temperature resilience, and production-grade robustness.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6010LPSQ-13 supports 75 A continuous drain current at TC = +100°C per the datasheet's Absolute Maximum Ratings table (Note 6). This reflects thermal derating due to reduced channel mobility and increased RDS(ON) at elevated temperatures, verified via production testing on IATF 16949-certified lines.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes - a 3–10 Ω gate resistor is recommended to dampen ringing and limit dV/dt during switching, especially in noisy 12 V vehicle networks. The device's typical gate resistance is 0.59 Ω, so external series resistance controls turn-on/off speed and meets CISPR 25 Class 5 radiated emissions requirements.

Can DMTH6010LPSQ-13 be used in synchronous rectification for 48 V systems?

Yes - its 60 V VDSS, low RDS(ON) (6.4 mΩ), and fast body diode (tRR = 35.4 ns) make it suitable for secondary-side synchronous rectification in 48 V–12 V buck converters. It must be driven with matched gate timing to avoid shoot-through, and layout must minimize source inductance.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the package is rated for Moisture Sensitivity Level 1 per J-STD-020 and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). Its green molding compound and matte tin finish ensure solderability per MIL-STD-202, Method 208, with no pre-bake required for dry storage.

DMTH6010LPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2090 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta), 136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6010LPSQ-13 FAQ

1.How can I place an order for DMTH6010LPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010LPSQ-13 reliable?

The price and inventory of DMTH6010LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010LPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010LPSQ-13?

DMTH6010LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010LPSQ-13?

For technical support, including DMTH6010LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPSQ-13 requirements.

6.How does Aetrix verify that DMTH6010LPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010LPSQ-13?

All DMTH6010LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010LPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH6010LPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6010LPSQ-13 Tags

  • DMTH6010LPSQ-13
  • DMTH6010LPSQ-13 PDF
  • DMTH6010LPSQ-13 Datasheet
  • DMTH6010LPSQ-13 Specifications
  • DMTH6010LPSQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH6010LPSQ-13
  • Buy DMTH6010LPSQ-13
  • DMTH6010LPSQ-13 Price
  • DMTH6010LPSQ-13 Distributor
  • DMTH6010LPSQ-13 Supplier
  • DMTH6010LPSQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER