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Diodes Incorporated DMTH6010LPSWQ-13
- Part No.:
- DMTH6010LPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6010LPSWQ-13.pdf
- Description:
- MOSFET N-CH 60V 15.5A/80A PWRDI
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMTH6010LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP Type Q) package, rated for continuous drain current of 98A at TC = +25°C, RDS(ON) = 8 mΩ @ VGS = 10V, and operation up to +175°C junction temperature. It serves as a high-current, high-temperature power switch in automotive engine-management and DC-DC converter circuits.
For engineers reviewing the DMTH6010LPSWQ-13 datasheet, DMTH6010LPSWQ-13 pinout, DMTH6010LPSWQ-13 application, or DMTH6010LPSWQ-13 equivalent, key selection criteria include its 100% production-tested UIS capability, wettable flank terminals for automated optical inspection, and IATF16949-certified manufacturing with PPAP support.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (1–3 V) enables robust turn-on with standard 4.5V/10V logic-level drivers, while its 38.5 pF Crss and 41.3 nC total gate charge at VGS = 10V support efficient high-frequency PWM control.
The device integrates a low-VSD body diode (0.8–1.2 V @ 20A) with 35.4 ns reverse recovery time and 38.2 nC QRR, enabling synchronous rectification and freewheeling in buck converters. Thermal resistance RθJC = 1.3 °C/W ensures effective heat transfer from junction to exposed drain pad under high-power operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche; supports 48V automotive bus systems with margin. |
| RDS(ON) | 8 mΩ @ VGS = 10V - Enables <1.6 W conduction loss at 98A, critical for thermal management in compact modules. |
| ID (TC = 25°C) | 98 A - Continuous drain current rating referenced to case temperature; requires direct thermal coupling to heatsink. |
| TJ max | +175°C - Extended junction temperature rating allows operation in under-hood environments without derating. |
| Ciss | 2090 pF - Input capacitance determines gate drive strength requirement; compatible with standard 1A peak gate drivers. |
| trr | 35.4 ns - Fast body diode recovery minimizes switching losses and voltage spikes during hard commutation. |
| Qg (VGS = 10V) | 41.3 nC - Total gate charge defines energy needed per switching cycle; enables >200 kHz operation with low driver loss. |
| EAS | 20 mJ - Avalanche energy rating validated per production UIS test; supports inductive load switching without snubbers. |
Pinout & Package
Package: PowerDI5060-8 (SWP Type Q), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Green Mark) | Source | Primary return path for load current; connected to PCB ground plane for low-inductance routing. |
| 2, 3, 6, 7 | Drain | Four parallel drain terminals tied to exposed copper pad; carries full load current and conducts heat to PCB. |
| 4 | Gate | Control input; requires low-impedance gate driver path to minimize ringing and ensure clean turn-on/turn-off. |
| 5, 8 | Source | Additional source terminals providing redundant low-resistance return paths and improved current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated reliability for automotive safety-critical systems; includes change control documentation and IATF16949 traceability. |
| 100% production UIS testing | Every unit tested for unclamped inductive switching up to 20 mJ, eliminating field failures from inductive kickback. |
| Wettable flank terminals | Side-wettable leads enable AOI verification of solder fillet height and void detection on bottom-side terminations. |
| +175°C maximum junction temperature | Enables placement in high-ambient zones (e.g., near engines or inverters) without thermal derating penalties. |
| Low RDS(ON) @ 4.5V | 12 mΩ at VGS = 4.5V ensures strong conduction even with 5V microcontroller outputs or degraded supply rails. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems. IC Role / Device Role / Timing Role: High-current, fast-switching power switch controlling solenoid actuation with precise pulse-width modulation. Use Value: 35.4 ns trr and 8 mΩ RDS(ON) reduce switching loss and coil heating, enabling tighter duty-cycle control and extended injector lifetime. |
Use Scenario: Load switch for HVAC blower motor control in centralized body electronics units. IC Role / Device Role / Timing Role: Low-loss power distribution switch managing 40–60A loads with overcurrent and thermal protection. Use Value: +175°C rating and 100% UIS testing ensure uninterrupted operation during prolonged high-load conditions under dashboard heat exposure. |
| DC-DC Converters | Start-Stop Systems |
Use Scenario: Synchronous rectifier in 12V-to-48V bidirectional buck-boost converters for mild hybrid architectures. IC Role / Device Role / Timing Role: Low-VSD body diode and fast trr enable efficient freewheeling and reverse conduction during phase transitions. Use Value: 0.8–1.2 V VSD and 38.2 nC QRR cut conduction loss by >30% vs. discrete Schottky solutions in 200 kHz+ topologies. |
Use Scenario: Main battery disconnect switch in intelligent battery management systems for engine start-stop cycles. IC Role / Device Role / Timing Role: Robust high-current switch handling repeated 100A+ cranking surges and load-dump transients. Use Value: 20 mJ EAS and 392 A IDM withstand repeated cranking events without degradation, supporting >100,000 cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60V, 220A, RDS(ON) = 2.2 mΩ @ 10V; PowerFLAT 5x6 package; no wettable flanks. | Higher current rating but larger footprint; lacks AEC-Q101 documentation for PPAP submission. | Preferred where higher current headroom is needed and optical inspection is not required. |
| IXTP50N10P | 100V, 50A, RDS(ON) = 18 mΩ @ 10V; TO-220 package; rated to +175°C but not AEC-Q101 qualified. | Lower current and higher RDS(ON); through-hole mounting limits board density and thermal performance. | Suitable for non-automotive industrial designs requiring higher VDSS margin and legacy packaging. |
Compared with STL220N6F7 and IXTP50N10P, DMTH6010LPSWQ-13 uniquely balances 98A current, 8 mΩ on-resistance, AEC-Q101 compliance, wettable flanks, and PowerDI5060-8 thermal efficiency-making it optimal for space-constrained, PPAP-driven automotive power stages.
Availability
DMTH6010LPSWQ-13 is available at Aetrix Electronics and suitable for engine-management systems, body control electronics, and DC-DC converters requiring stable component supply across automotive production lifecycles.
Supply support for DMTH6010LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-current switching in AEC-Q101-compliant vehicle subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH6010LPSWQ-13?
The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full enhancement and 0 V to -5 V for guaranteed turn-off, with transient overshoot suppressed via gate resistors and clamping diodes.
Does DMTH6010LPSWQ-13 require a heatsink when operating at 98A?
Yes. At 98A and 8 mΩ RDS(ON), conduction loss reaches ~77 W. With RθJC = 1.3 °C/W, even a minimal 10 °C/W heatsink is required to hold TJ ≤ 175°C. PCB copper area alone is insufficient; thermal vias to internal ground planes and external heatsinking are mandatory.
How does the wettable flank feature improve manufacturing yield?
The side-wettable leads allow automated optical inspection (AOI) systems to verify solder fillet formation and detect voids or insufficient solder on the terminal edges-critical for PowerDI5060-8's bottom-surface mounting. This eliminates reliance on X-ray for process validation and reduces field failure rates from cold solder joints.
Is DMTH6010LPSWQ-13 suitable for synchronous rectification in a 48V automotive DC-DC converter?
Yes. Its 0.8–1.2 V body diode forward voltage, 35.4 ns reverse recovery time, and 38.2 nC QRR enable efficient synchronous rectification at 200–500 kHz. Combined with 8 mΩ RDS(ON), it delivers lower conduction and switching loss than Schottky diodes in 48V output stages with 20–40A loads.
DMTH6010LPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2090 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.9W (Ta), 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type Q)
DMTH6010LPSWQ-13 FAQ
1.How can I place an order for DMTH6010LPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6010LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6010LPSWQ-13 reliable?
The price and inventory of DMTH6010LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010LPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6010LPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010LPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6010LPSWQ-13?
DMTH6010LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6010LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6010LPSWQ-13?
For technical support, including DMTH6010LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010LPSWQ-13 requirements.
6.How does Aetrix verify that DMTH6010LPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6010LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010LPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6010LPSWQ-13?
All DMTH6010LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010LPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6010LPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH6010LPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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