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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6010SCT

Name: DMTH6010SCT
Brand: Diodes Incorporated
SKU: DMTH6010SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6010SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMTH6010SCT.pdf

Description:: MOSFET N-CH 60V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMTH6010SCT from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in TO220-3 package, featuring 7.2mΩ R_DS(ON) at V_GS = 10V, 175°C maximum junction temperature, and 100% unclamped inductive switching rating-designed for high-efficiency DC-DC converters and motor control stages in industrial power supplies.

For engineers reviewing the DMTH6010SCT datasheet, DMTH6010SCT pinout, DMTH6010SCT application, or DMTH6010SCT equivalent, key selection criteria include its low R_DS(ON) at elevated temperature, robust avalanche energy (20mJ), fast switching dynamics (Q_g = 36.3nC), and thermal resistance (R_θJC = 1.2°C/W) under infinite heatsink conditions.

Technical Context

This MOSFET employs planar silicon process technology optimized for low conduction loss and controlled gate charge distribution. Its threshold voltage (2–4V) ensures reliable turn-on with standard 10V gate drivers, while the 1940pF input capacitance (C_iss) and 85pF reverse transfer capacitance (C_rss) support stable high-frequency operation up to 500kHz in synchronous buck topologies.

The device integrates a robust body diode with 1.3V forward voltage at 20A and 35.6ns reverse recovery time, enabling efficient freewheeling in hard-switched converters. Its SOA curve is rated for single-pulse operation up to 100A at 30V for 10ms, validated under TC = +25°C with infinite heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum drain-source blocking voltage for 48V bus systems with 20% derating margin
R_DS(ON)	7.2mΩ @ V_GS = 10V - Enables ≤0.72W conduction loss at 100A, critical for <95% efficiency targets
I_D (continuous)	100A @ T_C = +25°C - Requires active heatsinking above 76A at +100°C case temperature
E_AS	20mJ - Supports reliable operation in inductive load switching without external snubbers
Q_g	36.3nC - Determines gate driver current requirement (~3.6A peak for 10ns rise time)
R_θJC	1.2°C/W - Enables 125W power dissipation with ≤150°C junction rise over 25°C case
T_J max	+175°C - Qualified for under-hood automotive and industrial environments with minimal derating

Pinout & Package

Package: TO220-3, through-hole, lead-free matte tin finish on copper leadframe; UL 94V-0 molded plastic case; 1.85g weight.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab-must be isolated from heatsink unless referenced to system ground
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate return path
Gate	Control terminal	High-impedance input requiring <36.3nC charge for full enhancement; sensitive to ESD per ±20V rating

Key Features

Feature	Design Value
100% UIS rated	Guarantees safe operation during inductive turn-off transients without external protection components
+175°C TJ rating	Eliminates thermal derating in sealed enclosures or high-ambient industrial settings
Low C_iss/C_rss ratio	1940pF / 85pF = 22.8 - Reduces Miller effect, improving noise immunity in high-dV/dt environments
Green compound packaging	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) meeting strict environmental compliance mandates

Applications

Server VRM Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-frequency step-down conversion for CPU core voltage regulation in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 300–500kHz.

Use Value: 7.2mΩ R_DS(ON) minimizes I²R loss at 100A peak, directly contributing to >94% conversion efficiency at 12V input.

Use Scenario: Bidirectional H-bridge leg for 48V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 76A at +100°C case temperature in PWM-driven commutation.

Use Value: 175°C T_J rating allows sustained operation without forced air cooling in enclosed motor controllers.

Telecom DC-DC Brick

EV Onboard Charger PFC Stage

Use Scenario: Primary-side switch in isolated 48V-to-12V DC-DC modules for telecom base station power distribution.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in active clamp forward topology with 100ns dead-time constraints.

Use Value: 36.3nC Q_g enables precise gate timing control and reduces switching loss contribution to <15% of total loss budget.

Use Scenario: Boost switch in 3.3kW two-stage onboard charger PFC front-end operating at 100kHz.

IC Role / Device Role / Timing Role: High-reliability switching element subjected to repetitive 20mJ avalanche events during line-voltage transients.

Use Value: 100% UIS qualification eliminates need for external avalanche-rated snubber networks, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N6F6	R_DS(ON) = 5.8mΩ @ 10V, but only rated to +175°C with reduced ID (90A) and higher Q_g (52nC)	Better conduction loss but slower switching; requires stronger gate driver	Select when conduction loss dominates and gate drive capability permits higher Q_g
IXTP100N065	R_DS(ON) = 6.5mΩ @ 10V, TO220FP package (lower profile), no UIS rating specified	Space-constrained designs where height matters; lacks avalanche stress validation	Select for compact layouts where transient robustness is managed externally

Compared with STP100N6F6 and IXTP100N065, DMTH6010SCT offers the best balance of low R_DS(ON), verified UIS performance, and thermal ruggedness-making it optimal for unbuffered inductive loads and thermally constrained industrial systems.

Availability

DMTH6010SCT is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle assurance.

Supply support for DMTH6010SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMTH6010SCT belongs to Diodes' high-current, high-temperature MOSFET product line-engineered specifically for ruggedized power conversion in harsh ambient environments where thermal stability and transient robustness are non-negotiable.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMTH6010SCT supports 76A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO220-3 package under real-world heatsink conditions-not ambient temperature-and assumes proper mounting with thermal interface material and adequate heatsink surface area.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has a 1.3V forward voltage at 20A and 35.6ns reverse recovery time, making it unsuitable for synchronous rectification. It is designed for freewheeling only. For synchronous operation, an external Schottky or MOSFET-based synchronous rectifier must be used in parallel.

Does DMTH6010SCT require a gate resistor for EMI suppression?

A gate resistor (typically 5–15Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 0.55Ω intrinsic gate resistance is insufficient alone; adding external resistance controls dV/dt and reduces radiated emissions, especially in high-frequency (>300kHz) switching applications.

Can DMTH6010SCT be used in linear mode (constant-current regulation)?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) graph shows only single-pulse capability down to 10ms; sustained linear operation risks thermal runaway due to positive R_DS(ON) temperature coefficient and lack of SOA derating curves for DC bias conditions.

DMTH6010SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1940 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMTH6010SCT FAQ

1.How can I place an order for DMTH6010SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010SCT reliable?

The price and inventory of DMTH6010SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010SCT is usually 5 days.

3.What payment methods are accepted for DMTH6010SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010SCT?

DMTH6010SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010SCT?

For technical support, including DMTH6010SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010SCT requirements.

6.How does Aetrix verify that DMTH6010SCT is sourced from the original manufacturer or authorized distributors?

All DMTH6010SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010SCT meets industry standards.

7.What is the process for return or replacement of DMTH6010SCT?

All DMTH6010SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010SCT part is unused and in its original packaging.

Return procedure for DMTH6010SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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