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Diodes Incorporated DMTH6010SK3-13
- Part No.:
- DMTH6010SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH6010SK3-13.pdf
- Description:
- MOSFET N-CH 60V 16.3A/70A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:4,466
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Product details
Overview
DMTH6010SK3-13 from Diodes Incorporated is a 60V, 70A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 5.4 mΩ typical RDS(ON) at VGS = 10V, 175°C maximum junction temperature, and AEC-Q101 qualification. It serves as a high-current, thermally robust power switch in DC-DC converter primary-side switching and automotive-grade backlighting drivers.
For engineers reviewing the DMTH6010SK3-13 datasheet, DMTH6010SK3-13 pinout, DMTH6010SK3-13 application, or DMTH6010SK3-13 equivalent, key selection criteria include RDS(ON) stability over temperature, UIS ruggedness, thermal resistance (RθJC = 2.5°C/W), and TO252 package compatibility with high-density PCB layouts.
Technical Context
This MOSFET employs advanced trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 8 mΩ max RDS(ON) at 10V gate drive and 38.1 nC total gate charge enable high-efficiency operation in synchronous buck converters operating up to 500 kHz.
The device integrates a robust body diode with 35.6 nC QRR and 33.8 ns tRR, supporting continuous conduction mode (CCM) operation and reducing snubber requirements. Its 27.7 mJ EAS rating and 100% production UIS testing ensure reliability under inductive load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60V drain-source blocking voltage without breakdown. |
| RDS(ON) max | 8 mΩ @ VGS = 10V - Limits conduction loss to ≤11.2 W at 70A, critical for thermal management. |
| ID max (TC = 25°C) | 70 A - Supports high-current switching in compact heatsink-mounted designs. |
| RθJC | 2.5 °C/W - Enables direct thermal coupling to heatsinks for sustained 59W power dissipation. |
| Qg | 38.1 nC - Determines gate driver current requirement (~1.9 A peak for 20 ns rise time). |
| EAS | 27.7 mJ - Specifies single-pulse avalanche energy handling capability under inductive fault conditions. |
| TJ max | +175°C - Allows operation in under-hood automotive or industrial environments without derating. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for direct PCB copper thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or low-side switch node in half-bridge. |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires <20V absolute max gate-source voltage per rating. |
| Pin 3 (Drain) | Power output | High-current output node; electrically and thermally connected to large copper pour via exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS power stages. |
| 100% UIS tested | Each unit passes unclamped inductive switching test, ensuring field reliability in motor drives and solenoid controls. |
| Low Qgd × RDS(ON) FOM | 50.2 pJ - Optimized for high-frequency DC-DC converters where switching loss dominates efficiency. |
| Green, halogen-free construction | Meets RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity, enabling lead-free reflow assembly. |
| Exposed drain pad | Provides <2.5°C/W thermal path to PCB, eliminating need for external heatsinks in many 48V systems. |
Applications
| Automotive LED Headlight Driver | Industrial 48V DC-DC Converter |
|---|---|
Use Scenario: High-brightness LED arrays requiring precise current regulation and PWM dimming in vehicle front lighting. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling inductor current in buck-boost LED driver topology. Use Value: 175°C rating enables placement near heat-generating optics; low RDS(ON) minimizes thermal derating at full 70A pulse current. | Use Scenario: Step-down conversion from 48V bus to 12V/5V rails in factory automation controllers and PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of isolated forward converter, operating at 250–500 kHz. Use Value: 38.1 nC Qg and 9.3 nC Qgd reduce gate drive losses and improve light-load efficiency vs. legacy MOSFETs. |
| Server PSU OR-ing FET | Medical Imaging Power Supply |
Use Scenario: Redundant 12V power distribution in data center server PSUs, requiring hot-swap and reverse-current blocking. IC Role / Device Role / Timing Role: Low-loss OR-ing switch placed between parallel power supplies and main rail. Use Value: 5.4 mΩ typical RDS(ON) limits conduction loss to <1W at 15A, reducing thermal stress on PCB traces. | Use Scenario: High-reliability X-ray generator power stage where failure modes must be tightly controlled. IC Role / Device Role / Timing Role: Main switching element in resonant LLC converter powering high-voltage filament supply. Use Value: 27.7 mJ EAS and 20A IAS withstand repeated arc faults during tube conditioning cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N6F7 | RDS(ON) = 3.7 mΩ @ 10V (lower), but TJ max = 150°C (10°C lower); Qg = 52 nC (higher) | Better conduction efficiency at low frequency; less suitable for 175°C ambient or high-frequency switching | Select when thermal margin exists and lowest RDS(ON) dominates over switching loss. |
| IXTP75N065T | RDS(ON) = 6.5 mΩ @ 10V; TO-220 package; no AEC-Q101 qualification; RθJC = 1.2°C/W | Requires bolt-down heatsink; not automotive-qualified; higher thermal resistance than TO252 footprint | Select only for non-automotive, space-unconstrained designs needing highest current density per die area. |
Compared with STL130N6F7 and IXTP75N065T, DMTH6010SK3-13 uniquely balances 175°C operation, AEC-Q101 compliance, and TO252 thermal performance-making it optimal for automotive and industrial applications where ambient temperature, reliability, and board-level thermal design are co-constrained.
Availability
DMTH6010SK3-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48V DC-DC converters, and medical imaging power supplies requiring stable component supply across extended product lifecycles.
Supply support for DMTH6010SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the U.S., serving automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' high-reliability power transistor product line, engineered specifically for demanding automotive and industrial power conversion where thermal resilience, avalanche ruggedness, and long-term parametric stability are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH6010SK3-13 supports 49A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252 package under real-world heatsink conditions and must be validated using the provided transient thermal resistance curve (Figure 13) for pulsed operation.
Is the body diode suitable for synchronous rectification?
No-the body diode is not optimized for synchronous rectification due to its relatively high VSD (0.84–1.2V) and QRR (35.6 nC). It is intended for freewheeling and protection only. For synchronous rectification, an external Schottky or dedicated SR controller with low-VF FETs is recommended.
Does the DMTH6010SK3-13 require gate resistors for EMI control?
Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by the 0.55 Ω intrinsic gate resistance interacting with PCB trace inductance and driver output impedance. This improves EMI performance and reduces VGS overshoot, especially in high-dV/dt environments like motor drives.
Can this MOSFET replace the DMTH6010SK3Q in non-automotive designs?
Yes-DMTH6010SK3-13 shares identical electrical and thermal specifications with the AEC-Q101-qualified DMTH6010SK3Q, differing only in qualification documentation and traceability. It may be used in non-automotive applications where the same performance and reliability are required without formal automotive certification.
DMTH6010SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.3A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1940 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMTH6010SK3-13 FAQ
1.How can I place an order for DMTH6010SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6010SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6010SK3-13 reliable?
The price and inventory of DMTH6010SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010SK3-13 is usually 5 days.
3.What payment methods are accepted for DMTH6010SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6010SK3-13?
DMTH6010SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6010SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6010SK3-13?
For technical support, including DMTH6010SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010SK3-13 requirements.
6.How does Aetrix verify that DMTH6010SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6010SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010SK3-13 meets industry standards.
7.What is the process for return or replacement of DMTH6010SK3-13?
All DMTH6010SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6010SK3-13 part is unused and in its original packaging.
Return procedure for DMTH6010SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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