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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6010SK3Q-13

Name: DMTH6010SK3Q-13
Brand: Diodes Incorporated
SKU: DMTH6010SK3Q-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6010SK3Q-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH6010SK3Q-13.pdf

Description:: MOSFET N-CH 60V 16.3A/70A TO252

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Product details

Overview

DMTH6010SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous drain current of 70A at T_C = +25°C, R_DS(ON) = 5.4 mΩ (typ) @ V_GS = 10V, and operation up to +175°C junction temperature. It serves as a high-efficiency power switch in automotive DC-DC converters and power-management circuits.

For engineers reviewing the DMTH6010SK3Q-13 datasheet, DMTH6010SK3Q-13 pinout, DMTH6010SK3Q-13 application, or DMTH6010SK3Q-13 equivalent, key selection criteria include its 100% production-tested UIS capability, low Q_gd × R_DS(ON) figure-of-merit (FOM), thermally robust TO252 package with R_θJC = 2.5°C/W, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs advanced trench-gate silicon technology optimized for high-current, high-temperature automotive switching. Its gate threshold voltage (V_GS(TH) = 2–4 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level drivers, while its low output charge (Q_gd = 9.3 nC) minimizes switching losses in hard-switched topologies.

The device integrates a robust body diode with t_RR = 33.8 ns and Q_RR = 35.6 nC, enabling efficient synchronous rectification and flyback recovery in DC-DC stages. Thermal design is supported by validated transient thermal impedance curves and R_θJC = 2.5°C/W under infinite heatsink conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source blocking voltage without breakdown, suitable for 48 V automotive bus systems.
R_DS(ON)	5.4 mΩ (typ) @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for high-efficiency power stages.
I_D (continuous, T_C = 25°C)	70 A - Supports high-current load switching when mounted on an infinite heatsink.
T_J max	+175°C - Rated for under-hood automotive environments where ambient temperatures exceed +125°C.
Q_g	38.1 nC - Total gate charge determines driver strength requirement; enables fast switching with moderate gate drive power.
E_AS	27.7 mJ - Avalanche energy rating verified per production test, ensuring ruggedness against inductive load transients.
R_θJC	2.5°C/W - Junction-to-case thermal resistance enables precise thermal modeling for heatsink sizing and reliability prediction.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic package with exposed drain pad for direct PCB heat transfer. Dimensions per Diodes' outline drawing: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or return path; electrically tied to exposed drain pad via internal substrate in standard DPAK layout.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node requiring <38.1 nC total charge for full turn-on; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output (D)	High-current switched node; internally connected to large copper-exposed pad on bottom of package for thermal and electrical conduction.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Manufactured in IATF 16949-certified facilities with full automotive change control and traceability.
100% production UIS tested	Every unit undergoes unclamped inductive switching stress test (L = 0.1 mH, I_AS = 20 A), guaranteeing avalanche ruggedness in real-world faults.
Low Q_gd × R_DS(ON) FOM	Q_gd = 9.3 nC × R_DS(ON) = 5.4 mΩ = 50.2 nC·mΩ - Optimized for high-frequency DC-DC converter efficiency and reduced Miller-induced switching delay.
Thermally efficient TO252 package	R_θJC = 2.5°C/W enables >50 W power dissipation with modest heatsinking - supports compact, high-density automotive power modules.
Lead-free, halogen- and antimony-free	RoHS 3 compliant with Br+Cl <1500 ppm and Sb <1000 ppm - meets global automotive environmental requirements including ELV and IMDS.

Applications

Automotive DC-DC Converters

Engine Control Unit (ECU) Power Switching

Use Scenario: High-efficiency 48 V–12 V buck converter supplying auxiliary loads in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET operating at 200–500 kHz switching frequency.

Use Value: Low R_DS(ON) and Q_gd minimize conduction and switching losses, achieving >95% peak efficiency while maintaining thermal stability at +150°C ambient.

Use Scenario: Load switch controlling fuel injector drivers, solenoid actuators, or fan motors in engine bay-mounted ECUs.

IC Role / Device Role / Timing Role: Robust high-current power switch with integrated avalanche protection for inductive load demagnetization.

Use Value: 27.7 mJ E_AS and 20 A I_AS ensure safe turn-off without external snubbers, reducing BOM count and board space.

Automotive LED Backlight Drivers

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Constant-current boost controller for LCD instrument cluster backlighting in dashboards exposed to wide temperature swings.

IC Role / Device Role / Timing Role: High-side switch regulating current through LED strings using PWM dimming at 1–10 kHz.

Use Value: +175°C rating and stable R_DS(ON) over temperature enable reliable operation without derating across -40°C to +125°C ambient.

Use Scenario: Isolated auxiliary supply (e.g., 12 V/3 A) powering gate drivers and controllers inside EV on-board chargers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter operating continuously during AC charging cycles.

Use Value: TO252 thermal performance and 100% UIS testing ensure long-term reliability under repeated thermal cycling and load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(ON) = 2.2 mΩ @ V_GS = 10 V; TO263-7 package; higher capacitance (C_iss = 4200 pF).	Better conduction loss but larger footprint and higher gate drive demand; requires more complex thermal management.	Select when ultra-low R_DS(ON) justifies larger package and increased layout complexity.
IXTP50N10P	100 V rating; R_DS(ON) = 10 mΩ @ V_GS = 10 V; TO220 package; not AEC-Q101 qualified.	Higher voltage margin but no automotive qualification; unsuitable for PPAP-controlled production.	Select only for non-automotive industrial prototypes where qualification is not required.

Compared with STL220N6F7AG and IXTP50N10P, the DMTH6010SK3Q-13 delivers optimal balance of automotive qualification, thermal efficiency in TO252, and proven UIS ruggedness-making it preferred for volume production in safety-critical 48 V systems where footprint, qualification, and reliability are jointly constrained.

Availability

DMTH6010SK3Q-13 is available at Aetrix Electronics and suitable for automotive power management, DC-DC conversion, and LED backlighting applications requiring stable component supply, AEC-Q101 compliance, and extended temperature operation.

Supply support for DMTH6010SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMTH6010SK3Q belongs to Diodes' automotive-qualified PowerMOS family, designed specifically for high-current, high-temperature switching in 12 V, 24 V, and 48 V vehicle subsystems with stringent PPAP and IATF 16949 requirements.

FAQ

What is the maximum continuous drain current for DMTH6010SK3Q-13 at +100°C case temperature?

The datasheet specifies I_D = 49 A at T_C = +100°C, derived from thermal derating curves and validated under infinite heatsink conditions. This value assumes proper PCB copper area and thermal vias to maintain case temperature at the specified level.

Does DMTH6010SK3Q-13 require a gate resistor for automotive-grade EMI control?

Yes - a 3–10 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive environments. The device's R_g = 0.55 Ω and Q_gd = 9.3 nC make it susceptible to oscillation without controlled gate drive impedance.

Is the TO252 package of DMTH6010SK3Q-13 lead-free and RoHS 3 compliant?

Yes - the device uses matte tin annealed over copper leadframe and green molding compound meeting EU RoHS 3 (2015/863/EU), with bromine and chlorine <900 ppm each, and antimony <1000 ppm. Full compliance documentation is available via Diodes' quality portal.

Can DMTH6010SK3Q-13 be used in synchronous rectification mode?

Yes - its body diode exhibits t_RR = 33.8 ns and V_SD = 0.84 V (typ) at I_S = 20 A, enabling efficient synchronous rectification in buck or flyback topologies up to ~300 kHz, provided gate timing avoids shoot-through.

DMTH6010SK3Q-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 16.3A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2841 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMTH6010SK3Q-13 FAQ

1.How can I place an order for DMTH6010SK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6010SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6010SK3Q-13 reliable?

The price and inventory of DMTH6010SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6010SK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMTH6010SK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6010SK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6010SK3Q-13?

DMTH6010SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6010SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6010SK3Q-13?

For technical support, including DMTH6010SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6010SK3Q-13 requirements.

6.How does Aetrix verify that DMTH6010SK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6010SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6010SK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMTH6010SK3Q-13?

All DMTH6010SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6010SK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6010SK3Q-13 part is unused and in its original packaging.

Return procedure for DMTH6010SK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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