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Diodes Incorporated DMTH6015LDVW-13
- Part No.:
- DMTH6015LDVW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH6015LDVW-13.pdf
- Description:
- MOSFET 2N-CH 60V 9.2A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,481
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Product details
Overview
DMTH6015LDVW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI®3333-8/SWP package, rated 60V VDSS, 20.5mΩ RDS(ON) @ 10V, and 24.5A ID at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency power management in compact DC-DC converters and wireless charging systems.
For engineers reviewing the DMTH6015LDVW-13 datasheet, DMTH6015LDVW-13 pinout, DMTH6015LDVW-13 application, or DMTH6015LDVW-13 equivalent, key selection criteria include its 175°C rated junction temperature, wettable flank terminals for automated optical inspection, and dual-channel layout enabling space-constrained load switch and synchronous rectifier topologies.
Technical Context
This device integrates two independent N-channel MOSFETs in a single thermally optimized POWERDI3333-8 package with shared thermal path to the exposed drain pads. Its gate threshold voltage (1.3–2.5V) supports 3.3V and 4.5V logic-level drive, while low Ciss (825pF) and Qg (14.3nC @ 10V) enable high-frequency operation up to 1MHz in buck converters.
The MOSFET features 100% production-tested unclamped inductive switching (UIS) capability (IAS = 20.4A, EAS = 20.8mJ), and body diode recovery parameters (tRR = 22.7ns, QRR = 12.8nC) optimized for synchronous rectification in isolated and non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports input rails up to 48V nominal with margin for transients in industrial and automotive power supplies. |
| RDS(ON) @ 10V | 20.5mΩ max - Enables ≤0.5W conduction loss at 10A, critical for thermal management in sealed enclosures. |
| ID (TC = 25°C) | 24.5A - Dual-channel rating allows parallel operation without external current sharing in high-current load switches. |
| TJ Max | +175°C - Qualified for under-hood automotive modules and high-ambient industrial motor drives. |
| Ciss | 825pF - Reduces gate drive power requirement and improves efficiency in 500kHz–1MHz switching applications. |
| tRR | 22.7ns - Minimizes reverse recovery losses during hard-switched synchronous rectification. |
| RθJC | 7°C/W - Enables direct thermal coupling to heatsink or PCB copper plane for >3W continuous dissipation. |
Pinout & Package
Package: POWERDI®3333-8/SWP (Type UXD), surface-mount, wettable flank, thermally enhanced plastic case with exposed drain pads on bottom side. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-impedance return path for first MOSFET; tied to internal drain pad for thermal conduction. |
| G1 | Gate of Channel 1 | Logic-level control input; ESD-protected, compatible with 3.3V/5V microcontrollers. |
| D1 | Drain of Channel 1 | Exposed copper pad on bottom - primary thermal interface and high-current output node. |
| S2 | Source of Channel 2 | Independent source terminal; enables dual independent switching or paralleled operation. |
| G2 | Gate of Channel 2 | Separate gate control allows asynchronous or synchronous dual-phase operation. |
| D2 | Drain of Channel 2 | Second exposed drain pad - supports symmetrical thermal layout and dual-output configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 175°C Junction Rating | Enables deployment in engine control units, LED drivers, and industrial PLCs without derating at ambient >125°C. |
| 100% UIS Tested | Guarantees robustness against inductive kickback in motor gate drivers and solenoid controls without external snubbers. |
| Wettable Flank Terminals | Supports automated optical inspection (AOI) of solder fillets on all four side terminals - eliminates X-ray requirement for IPC Class 3 assembly. |
| Low Qgd/Qgs Ratio | 2.8nC / 2.1nC = 1.33 - Improves Miller immunity and reduces risk of shoot-through in half-bridge configurations. |
| Halogen & Antimony Free | Meets JEDEC J-STD-709B green material requirements for aerospace and medical equipment compliance. |
Applications
| Wireless Charging Transmitter | High-Density DC-DC Converter |
|---|---|
Use Scenario: 15W Qi-compliant transmitter using dual-phase resonant inverter. IC Role / Device Role / Timing Role: Dual N-channel switch driving series-LC tank; each channel handles 50% phase-shifted current. Use Value: Low RDS(ON) and fast tF (8.0ns) minimize conduction and switching losses at 200–300kHz, improving system efficiency by ≥2.1% over comparable 30V MOSFETs. |
Use Scenario: 12V-to-3.3V synchronous buck converter in network switch PoE controller. IC Role / Device Role / Timing Role: High-side and low-side switch in 1MHz fixed-frequency topology with integrated PWM controller. Use Value: Matched RDS(ON) channels and low Coss (244pF) reduce dead-time losses and improve light-load efficiency across 10mA–10A range. |
| Automotive Body Control Module | Industrial Load Switch |
Use Scenario: 12V/24V load switch for HVAC blower motor and seat heater control in AEC-Q101 qualified BCU. IC Role / Device Role / Timing Role: Dual-channel protected load switch replacing discrete FET + driver + protection IC. Use Value: 175°C rating and 100% UIS testing eliminate need for external overvoltage clamps, reducing BOM count by 3 components per channel. |
Use Scenario: Hot-swap controller for 48V server backplane with inrush limiting and short-circuit protection. IC Role / Device Role / Timing Role: Dual N-FET configured as ideal diode + current-limiting switch with external sense resistor. Use Value: Independent gate control allows precise timing of turn-on slew rate and fast fault shutdown (<100ns response via gate discharge path). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6015LSDW-13 | Same die, but POWERDI5060-8 package - larger footprint (5.0×6.0mm), lower RθJA (35°C/W), higher ID (32A). | Better thermal performance in high-power (>5W) applications; incompatible pinout and board layout. | Select when board space permits and junction temperature must stay <125°C at >20A continuous. |
| SI7157DN-T1-GE3 | 60V dual N-FET in PowerPAK® SO-8; RDS(ON) = 22mΩ @ 10V, but higher Ciss (1050pF) and no 175°C rating. | Limited to ≤150°C ambient; unsuitable for under-hood automotive use without derating. | Choose for cost-sensitive consumer power supplies where 125°C max junction is acceptable. |
Compared with DMTH6015LDVW-13, DMTH6015LSDW-13 trades board area for superior thermal headroom, while SI7157DN-T1-GE3 offers legacy SO-8 compatibility at the expense of high-temperature reliability and switching efficiency.
Availability
DMTH6015LDVW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, high-density DC-DC converters, and automotive body control modules requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH6015LDVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.
This part belongs to Diodes' POWERDI® high-reliability MOSFET product line, engineered specifically for space-constrained, thermally demanding power conversion and load switching applications in automotive, industrial, and computing markets.
FAQ
What is the maximum allowable gate-source voltage for DMTH6015LDVW-13?
The absolute maximum VGS is ±16V, as specified in the Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable 4.5V logic-level drive, the gate threshold voltage range (1.3–2.5V) ensures full enhancement while maintaining noise margin against false turn-on from system transients.
Does DMTH6015LDVW-13 support synchronous rectification in flyback converters?
Yes - its low RDS(ON) (20.5mΩ), fast tF (8.0ns), and low QRR (12.8nC) make it suitable for secondary-side synchronous rectification in 60W–120W flyback designs. The dual-channel configuration allows independent control of two output windings or interleaved operation for reduced ripple current.
How does the wettable flank feature impact PCB assembly yield?
The wettable flank design exposes vertical sidewalls of all four side terminals, enabling AOI systems to inspect solder fillet height and wetting angle directly - achieving >99.95% defect detection for head-in-pillow and insufficient solder defects without requiring costly X-ray inspection in Class III assemblies.
Is DMTH6015LDVW-13 qualified to AEC-Q101?
No - the datasheet states that AEC-Q101 qualification requires specific change control and PPAP capability, which must be requested separately. This part is rated for 175°C operation and 100% UIS tested, but formal AEC-Q101 certification is not included in the standard release and requires engagement with Diodes' automotive team.
DMTH6015LDVW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 825pF @ 30V
- Power - Max:
- 1.46W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXD)
DMTH6015LDVW-13 FAQ
1.How can I place an order for DMTH6015LDVW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6015LDVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6015LDVW-13 reliable?
The price and inventory of DMTH6015LDVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6015LDVW-13 is usually 5 days.
3.What payment methods are accepted for DMTH6015LDVW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6015LDVW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6015LDVW-13?
DMTH6015LDVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6015LDVW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6015LDVW-13?
For technical support, including DMTH6015LDVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6015LDVW-13 requirements.
6.How does Aetrix verify that DMTH6015LDVW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6015LDVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6015LDVW-13 meets industry standards.
7.What is the process for return or replacement of DMTH6015LDVW-13?
All DMTH6015LDVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6015LDVW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6015LDVW-13 part is unused and in its original packaging.
Return procedure for DMTH6015LDVW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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