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Diodes Incorporated DMTH6015LDVW-7
- Part No.:
- DMTH6015LDVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH6015LDVW-7.pdf
- Description:
- MOSFET 2N-CH 60V 9.2A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,317
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Product details
Overview
DMTH6015LDVW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI®3333-8/SWP package, rated 60V VDSS, 20.5mΩ RDS(ON) @ 10V, and 175°C TJ max, designed for high-efficiency power management and load switching in space-constrained DC-DC converters and wireless charging systems.
For engineers reviewing the DMTH6015LDVW-7 datasheet, DMTH6015LDVW-7 pinout, DMTH6015LDVW-7 application, or DMTH6015LDVW-7 equivalent, key selection criteria include its dual-channel layout, wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, and thermal performance at +175°C junction temperature.
Technical Context
This dual N-channel MOSFET integrates two independent high-side or low-side switch elements in a single compact surface-mount package. Each channel supports 24.5A continuous drain current at TC = +25°C with gate threshold voltage of 1.3–2.5V and fast switching times (tD(ON) = 4.0ns, tF = 8.0ns) under standard test conditions.
The device features low input capacitance (Ciss = 825pF), low gate charge (Qg = 14.3nC @ 10V), and a thermally optimized die-to-case resistance of 7°C/W, enabling efficient operation in high-frequency synchronous buck stages and hot-swap circuits where thermal margin and EMI control are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports input rails up to 48V nominal systems with safety margin for transients. |
| RDS(ON) @ 10V | 20.5mΩ max - Enables ≤0.5W conduction loss at 5A per channel in compact layouts. |
| ID Continuous @ TC=25°C | 24.5A - Sustains high-current load switching without external heatsinking on PCB thermal pads. |
| TJ Max | +175°C - Qualified for under-hood automotive and industrial environments with minimal derating. |
| Ciss | 825pF - Reduces gate drive power and improves switching efficiency above 500kHz. |
| Qg @ 10V | 14.3nC - Allows use with standard gate drivers (e.g., UCC27531) without excessive drive strength. |
| UIS Tested | 100% production-tested - Eliminates need for external snubbers in inductive load applications. |
Pinout & Package
Package: POWERDI®3333-8/SWP (Type UXD), 3.3mm × 3.3mm × 0.8mm body with wettable flank leads for AOI compatibility and enhanced solder joint reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Low-side return path for Channel 1; electrically isolated from S2 in dual configuration. |
| G1 | Gate 1 | Control terminal for Channel 1; ESD-protected, threshold 1.3–2.5V. |
| D1 | Drain 1 | Main current output node for Channel 1; connected internally to top-side copper pad. |
| S2 | Source 2 | Independent return path for Channel 2; enables dual independent switches or paralleled operation. |
| G2 | Gate 2 | Separate control for Channel 2; identical electrical specs to G1. |
| D2 | Drain 2 | Second high-current output node; shares same thermal pad as D1 but separate routing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two fully independent 60V/24.5A MOSFETs in one 3.3×3.3mm footprint-reduces board area by ~40% vs. discrete solutions. |
| Wettable flank terminals | Matte tin–annealed leads with side-wall plating-enables 100% automated optical inspection of solder fillets. |
| 175°C rated junction | Validated operation up to +175°C ambient with full RDS(ON) spec-supports engine bay or enclosed power supply designs. |
| 100% UIS tested | Every unit subjected to unclamped inductive switching stress (L = 0.1mH, IAS = 20.4A)-ensures field reliability in motor or solenoid drive. |
| Low Qgd/Qgs ratio | Qgd = 2.8nC, Qgs = 2.1nC - Minimizes Miller effect, improving hard-switching stability in synchronous rectifiers. |
Applications
| Wireless Charging Transmitter | High-Density DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge inductor driver for 15W Qi-compliant transmitter coils operating at 100–200kHz. IC Role / Device Role / Timing Role: Dual N-channel half-bridge switch-D1/G1/S1 and D2/G2/S2 form complementary legs with dead-time control. Use Value: Low RDS(ON) and Ciss reduce conduction and switching losses; 175°C rating allows sealed enclosure operation without forced air. |
Use Scenario: Synchronous rectifier in 12V→3.3V/10A buck converter for telecom baseband processing units. IC Role / Device Role / Timing Role: Dual-channel low-side switch-both channels paralleled for 20A total output with shared gate drive. Use Value: Wettable flank leads ensure solder joint integrity during reflow; 7°C/W RθJC enables direct thermal coupling to inner-layer copper planes. |
| Automotive Body Control Module | Industrial Hot-Swap Controller |
|
Use Scenario: Load switch for 12V accessory rail (e.g., infotainment USB ports) requiring AEC-Q101 alignment and overtemperature protection. IC Role / Device Role / Timing Role: High-side load switch using external charge pump-S1/S2 tied to ground, D1/D2 to load, G1/G2 driven via level-shifted PWM. Use Value: 100% UIS testing ensures survivability during battery disconnect events; -55°C to +175°C range meets automotive ambient requirements. |
Use Scenario: Dual-rail hot-swap controller for redundant 48V server backplanes with inrush limiting and fault isolation. IC Role / Device Role / Timing Role: Independent channel control-Channel 1 manages primary rail, Channel 2 handles backup, each with dedicated current sensing. Use Value: Low gate charge enables fast turn-on (<100ns) for precise inrush control; dual isolation prevents fault propagation between rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6015LFG-7 | Same RDS(ON) and VDSS, but in SOT-23-6 package; higher RθJA (150°C/W) and no wettable flanks. | Limited to <10A/channel due to thermal constraints; unsuitable for AOI-dependent production lines. | Select when board space is less constrained and optical inspection is not required. |
| IPD95R1K2P7ATMA1 | 650V SiC MOSFET, single-channel, 1.2Ω RDS(ON); higher voltage rating but incompatible topology and gate drive. | Designed for PFC/LLC primary side-not functionally substitutable in low-voltage dual-switch roles. | Not recommended for direct replacement; only consider if redesigning for high-voltage, high-efficiency topologies. |
Compared with DMN6015LFG-7, DMTH6015LDVW-7 delivers superior thermal performance and manufacturability via its POWERDI3333-8 package; versus IPD95R1K2P7ATMA1, it offers true dual-channel integration and native 4.5V logic-level drive-critical for compact, cost-sensitive 12–48V power stages.
Availability
DMTH6015LDVW-7 is available at Aetrix Electronics and suitable for wireless charging transmitters, high-density DC-DC converters, and automotive body control modules requiring stable component supply across extended temperature ranges and high-reliability manufacturing flows.
Supply support for DMTH6015LDVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection devices for industrial, computing, and automotive markets.
This part belongs to Diodes' POWERDI®3333-8 dual-MOSFET product line, engineered specifically for high-current, high-temperature power conversion where miniaturization, thermal resilience, and automated assembly are mandatory design requirements.
FAQ
What is the maximum continuous drain current per channel at 100°C case temperature?
The DMTH6015LDVW-7 supports 17.4A continuous drain current per channel at TC = +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design per Note 6 (2oz copper, thermal bias to bottom-layer 1-inch square copper plate).
Does this MOSFET require external gate resistors for safe operation in a half-bridge configuration?
Yes-while the device has low intrinsic gate resistance (Rg = 1.5Ω), external gate resistors (typically 2.2–10Ω) are required to control dV/dt, suppress ringing, and prevent shoot-through in half-bridge topologies. The 2.8nC Qgd and 2.1nC Qgs values indicate moderate Miller sensitivity, necessitating careful gate drive impedance matching.
Is the DMTH6015LDVW-7 qualified to AEC-Q101 for automotive use?
Diodes states that parts qualified to AEC-Q101 require specific change control and PPAP capability; the DMTH6015LDVW-7 is not pre-qualified under AEC-Q101 in its standard configuration. Customers requiring automotive qualification must contact Diodes directly to initiate a dedicated qualification program with IATF 16949-certified manufacturing.
Can both channels be paralleled to double the current handling capability?
Yes-both channels share identical electrical characteristics (RDS(ON), VGS(TH), Qg) and thermal coupling to the common drain pad, enabling safe parallel operation. When paralleled, total continuous current rises to 34.8A at TC = +100°C, provided gate drive signals are matched and PCB layout maintains symmetrical current paths.
DMTH6015LDVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 825pF @ 30V
- Power - Max:
- 1.46W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXD)
DMTH6015LDVW-7 FAQ
1.How can I place an order for DMTH6015LDVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6015LDVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6015LDVW-7 reliable?
The price and inventory of DMTH6015LDVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6015LDVW-7 is usually 5 days.
3.What payment methods are accepted for DMTH6015LDVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6015LDVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6015LDVW-7?
DMTH6015LDVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6015LDVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6015LDVW-7?
For technical support, including DMTH6015LDVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6015LDVW-7 requirements.
6.How does Aetrix verify that DMTH6015LDVW-7 is sourced from the original manufacturer or authorized distributors?
All DMTH6015LDVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6015LDVW-7 meets industry standards.
7.What is the process for return or replacement of DMTH6015LDVW-7?
All DMTH6015LDVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6015LDVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6015LDVW-7 part is unused and in its original packaging.
Return procedure for DMTH6015LDVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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