Diodes Incorporated DMTH6015LDVWQ-13

Overview

DMTH6015LDVWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI®3333-8/SWP package, rated 60V V_DSS, 20.5mΩ R_DS(ON) @ 10V, and 24.5A I_D at T_C = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive-grade DC-DC converters and wireless charging systems operating up to +175°C junction temperature.

For engineers reviewing the DMTH6015LDVWQ-13 datasheet, DMTH6015LDVWQ-13 pinout, DMTH6015LDVWQ-13 application, or DMTH6015LDVWQ-13 equivalent, key selection criteria include its wettable flank package for optical inspection, 100% production-tested UIS robustness, low gate charge (14.3nC @ 10V), and dual-channel layout enabling compact half-bridge or synchronous rectifier topologies.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single thermally optimized POWERDI3333-8/SWP package with isolated source terminals and shared thermal pad. Its gate threshold voltage (1.3–2.5V) supports 3.3V and 5V logic-level drive, while low C_iss (825pF) and fast switching times (t_R = 5.3ns, t_F = 8.0ns) enable high-frequency operation in automotive power management.

The device features ESD-protected gates, low R_DS(ON) temperature coefficient (normalized R_DS(ON) = 2.4× at 175°C vs. 25°C), and guaranteed avalanche energy rating (E_AS = 20.8mJ), making it suitable for unclamped inductive switching in safety-critical vehicle subsystems.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8/SWP (Type UXD), surface-mount, wettable flank, thermally enhanced plastic case with exposed copper thermal pad. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with BSC028N06NS3 and NTMFD4829NT1G, DMTH6015LDVWQ-13 delivers superior power density via integrated dual channels, industry-leading thermal resistance (7°C/W), and production-validated UIS robustness-critical for space-constrained, high-reliability automotive power stages.

Availability

DMTH6015LDVWQ-13 is available at Aetrix Electronics and suitable for automotive wireless charging, DC-DC conversion, and electric power steering systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH6015LDVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMTH6015LDVWQ belongs to Diodes' AEC-Q101-qualified POWERDI®3333-8 automotive MOSFET family, engineered specifically for compact, thermally demanding power conversion in engine bay and chassis-mounted modules.

FAQ

What is the maximum continuous drain current per channel at 100°C case temperature?

The DMTH6015LDVWQ-13 supports 17.4A continuous drain current per channel at T_C = +100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with 2oz copper and thermal bias to a 1-inch square copper plate, delivering R_θJA = 50°C/W.

Does this MOSFET require external gate resistors for safe operation?

Yes-external gate resistors are required to control dV/dt and prevent parasitic oscillation during switching. The datasheet recommends R_g = 6Ω for characterization (e.g., t_R, t_F measurements), and actual values must be selected based on driver capability, layout parasitics, and EMI requirements per application.

Can the two channels be paralleled to increase current capacity?

No-the channels are electrically isolated with separate source terminals and are not internally matched for parallel operation. Paralleling would cause unequal current sharing due to parametric variation and thermal coupling differences; use as independent switches or in half-bridge configurations only.

Is the thermal pad electrically connected to any internal node?

No-the exposed thermal pad is electrically isolated and serves only for thermal conduction. It must be soldered to a dedicated PCB copper pour connected to system ground or left floating per layout requirements, but never tied to drain, source, or gate potentials without verification of isolation integrity.