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Diodes Incorporated DMTH6015LDVWQ-7
- Part No.:
- DMTH6015LDVWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH6015LDVWQ-7.pdf
- Description:
- MOSFET 2N-CH 60V 9.2A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,956
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Product details
Overview
DMTH6015LDVWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI®3333-8/SWP package, rated 60V VDSS, 20.5mΩ RDS(ON) @ 10V, and qualified to AEC-Q101 for automotive use. It delivers 24.5A continuous drain current at TC = +25°C and operates up to +175°C junction temperature-enabling high-reliability power switching in wireless charging transmitters and DC-DC converter primary/secondary side synchronous rectification.
For engineers reviewing the DMTH6015LDVWQ-7 datasheet, DMTH6015LDVWQ-7 pinout, DMTH6015LDVWQ-7 application, or DMTH6015LDVWQ-7 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, low Qg (14.3nC @ 10V), and dual-die layout enabling half-bridge or dual-switch topologies without external paralleling.
Technical Context
This dual N-channel MOSFET integrates two matched silicon dies in a single POWERDI3333-8/SWP thermally enhanced package with isolated source terminals and shared thermal pad. Its gate threshold voltage (1.3–2.5V) enables compatibility with 3.3V and 5V logic-level drivers, while low Ciss (825pF) and fast switching times (tr = 5.3ns, tf = 8.0ns) support high-frequency (>500kHz) operation in resonant converters.
The device features integrated ESD protection on each gate, reverse recovery optimized body diodes (tRR = 22.7ns, QRR = 12.8nC), and guaranteed RθJC of 7°C/W-enabling direct thermal coupling to PCB copper planes. Its AEC-Q101 qualification covers HTOL, TC, UHAST, and mechanical shock testing per IATF 16949 manufacturing controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V nominal bus systems with 20% transient margin in automotive and industrial DC-DC stages. |
| RDS(ON) @ 10V | 20.5mΩ max - Limits conduction loss to ≤5.1W at 15A, enabling compact thermal design in space-constrained modules. |
| ID Continuous @ TC=25°C | 24.5A - Enables single-device implementation of 300W+ synchronous rectifiers without paralleling. |
| Qg @ 10V | 14.3nC - Reduces gate drive power requirement and allows use of low-current drivers (e.g., UCC27524A). |
| TJ Operating Range | −55°C to +175°C - Certified for under-hood automotive environments and high-temperature industrial motor drives. |
| Ciss | 825pF - Minimizes Miller effect during hard switching, supporting stable operation in LLC and phase-shifted full-bridge topologies. |
| EAS | 20.8mJ - Withstands repetitive inductive energy spikes in automotive load dump and solenoid control circuits. |
Pinout & Package
Package: POWERDI®3333-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed copper thermal pad and wettable flank leads for solder joint inspection. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H); weight ≈ 0.072 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first MOSFET; requires dedicated gate resistor and driver path. |
| S1 | Source of Channel 1 | Isolated source node-used as local reference for high-side or floating gate drive configurations. |
| D1 | Drain of Channel 1 | High-current output terminal; electrically connected to internal die drain metallization and thermal pad. |
| G2 | Gate of Channel 2 | Independent gate for second channel; enables complementary or parallel switching without cross-talk risk. |
| S2 | Source of Channel 2 | Separate source node-supports dual-output or half-bridge configurations with independent source referencing. |
| D2 | Drain of Channel 2 | Second high-current drain terminal; shares thermal pad but has isolated drain routing per die. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to 20.4A/20.8mJ-eliminates need for external snubbers in inductive load switching. |
| Wettable flank terminals | Enables AOI-compatible solder joint verification on both side and bottom edges-critical for automotive zero-defect manufacturing. |
| +175°C rated junction temperature | Supports operation in engine bay, transmission control units, and EV battery management systems without derating. |
| Low Qgd/Qgs ratio (2.8nC / 2.1nC) | Reduces Miller-induced shoot-through risk in half-bridge layouts and improves PWM timing predictability. |
| AEC-Q101 qualified + PPAP capable | Validated for automotive safety-critical subsystems including wireless charging pads and 12V/48V DC-DC converters. |
Applications
| Automotive Wireless Charging Transmitter | 48V-to-12V Synchronous Buck Converter |
|---|---|
|
Use Scenario: High-efficiency 15W Qi-compliant transmitter operating in vehicle center console with ambient temperatures up to +85°C. IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge inverter stage; G1/D1/S1 and G2/D2/S2 used as complementary high/low side with bootstrap gate drive. Use Value: Low RDS(ON) and fast switching minimize conduction and switching losses at 200–300kHz, achieving >93% efficiency while meeting CISPR 25 Class 5 EMI limits. |
Use Scenario: Compact 100W bidirectional DC-DC module for 48V mild-hybrid architectures requiring high reliability over 15-year service life. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier pair in interleaved buck topology; each channel handles 50A peak current with independent thermal paths. Use Value: Matched dual-die characteristics ensure balanced current sharing; RθJC = 7°C/W enables direct thermal coupling to 2oz copper plane, limiting ΔT to <35°C at full load. |
| Industrial Motor Drive Gate Driver Stage | Server PSU ORing FET Controller |
|
Use Scenario: 3-phase BLDC driver for HVAC blowers in data center cooling systems, operating continuously at +70°C ambient. IC Role / Device Role / Timing Role: High-side and low-side switches in three half-bridge legs; D1/S1/G1 and D2/S2/G2 configured per leg with isolated gate drive. Use Value: 175°C rating avoids thermal shutdown during sustained overload; 100% UIS testing ensures survival during motor stall events with inductive kickback. |
Use Scenario: Hot-swap ORing circuit in 48V server power distribution unit, managing redundancy between two PSUs with <100μs fault response. IC Role / Device Role / Timing Role: Dual-channel ideal diode controller interface-each MOSFET acts as reverse-polarity and overcurrent protected ORing element. Use Value: Low VSD (0.7V typ) and fast tRR (22.7ns) minimize forward drop and reverse recovery loss during switchover, reducing heat generation by 40% vs. discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80N04S4-02 | 40V VDSS, 2.0mΩ RDS(ON), TO-263-7 package, no wettable flanks | Limited to 24V/36V systems; larger footprint and higher thermal resistance (RθJC = 1.2°C/W but RθJA = 35°C/W on 2-layer board) | Prefer when lower RDS(ON) is critical and board space permits larger package; not suitable for AEC-Q101 PPAP workflows. |
| STL220N6F7 | 60V VDSS, 2.2mΩ RDS(ON), PowerFLAT 5x6 package, no AEC-Q101 certification | Higher current rating (220A pulsed) but unqualified for automotive; lacks production UIS testing and wettable flank inspection capability | Select only for non-automotive industrial applications where cost-per-amp dominates and AEC compliance is unnecessary. |
Compared with IPB80N04S4-02 and STL220N6F7, DMTH6015LDVWQ-7 uniquely combines AEC-Q101 qualification, wettable flank leads, and dual-channel integration in a 3.3mm² footprint-making it the only option qualified for PPAP-controlled automotive wireless charging and 48V DC-DC designs requiring zero-defect solder joint verification.
Availability
DMTH6015LDVWQ-7 is available at Aetrix Electronics and suitable for automotive wireless charging, 48V/12V DC-DC conversion, and industrial motor drive applications requiring stable component supply across multi-year production cycles.
Supply support for DMTH6015LDVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMTH6015LDVWQ-7 belongs to Diodes' automotive-grade POWERDI®3333-8 MOSFET family, engineered specifically for high-temperature, high-reliability power conversion in electric vehicles and ADAS subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH6015LDVWQ-7?
The absolute maximum VGS rating is ±16V. Operation beyond this risks permanent gate oxide damage. Recommended drive voltage is 10V for full RDS(ON) performance, with minimum functional VGS of 4.5V delivering 27mΩ. Gate resistors must limit dV/dt to avoid parasitic turn-on during high-speed switching.
Does DMTH6015LDVWQ-7 require external gate resistors in half-bridge configurations?
Yes-each gate (G1 and G2) requires an individual series gate resistor (typically 5–10Ω) to control rise/fall times, suppress ringing, and prevent shoot-through. The device's low Rg (1.5Ω typical) makes external resistance essential for stable switching in high-di/dt applications like wireless charging inverters.
How is thermal performance validated for DMTH6015LDVWQ-7 on standard PCBs?
Thermal ratings are measured per JEDEC standards: RθJA = 103°C/W on 1-layer FR-4 (minimum pad), and RθJA = 50°C/W on 2oz copper with 1-inch thermal pad. RθJC = 7°C/W is verified via transient dual-interface testing, confirming direct thermal path from die to exposed pad under production-relevant reflow profiles.
Can DMTH6015LDVWQ-7 be used in linear mode (e.g., electronic load applications)?
No-it is optimized for switching operation only. Linear mode operation exceeds Safe Operating Area (SOA) limits above 10V VDS at currents >2A (per Figure 12). Its SOA is defined for single-pulse switching; sustained linear conduction causes rapid thermal runaway due to positive RDS(ON) temperature coefficient and limited thermal mass.
DMTH6015LDVWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 825pF @ 30V
- Power - Max:
- 1.46W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXD)
DMTH6015LDVWQ-7 FAQ
1.How can I place an order for DMTH6015LDVWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6015LDVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6015LDVWQ-7 reliable?
The price and inventory of DMTH6015LDVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6015LDVWQ-7 is usually 5 days.
3.What payment methods are accepted for DMTH6015LDVWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6015LDVWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6015LDVWQ-7?
DMTH6015LDVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6015LDVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6015LDVWQ-7?
For technical support, including DMTH6015LDVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6015LDVWQ-7 requirements.
6.How does Aetrix verify that DMTH6015LDVWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMTH6015LDVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6015LDVWQ-7 meets industry standards.
7.What is the process for return or replacement of DMTH6015LDVWQ-7?
All DMTH6015LDVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6015LDVWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6015LDVWQ-7 part is unused and in its original packaging.
Return procedure for DMTH6015LDVWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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