Diodes Incorporated DMTH6015LPDW-13
- Part No.:
- DMTH6015LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6015LPDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 9.4A PWRDI50
- Quantity:
- Payment:

- Shipping:

Inventory:4,188
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Product details
Overview
DMTH6015LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated 60V VDSS, 20 mΩ RDS(ON) @ 10V, and 36.3A ID at TC = +25°C. It features 100% production-tested UIS, ESD-protected gate, and wettable flanks for optical inspection - deployed in wireless charging transmitters and high-efficiency DC-DC converter load switches.
For engineers reviewing the DMTH6015LPDW-13 datasheet, DMTH6015LPDW-13 pinout, DMTH6015LPDW-13 application, or DMTH6015LPDW-13 equivalent, key selection criteria include RDS(ON) at 4.5V (27 mΩ), +175°C operation, dual-channel thermal coupling, and PowerDI5060-8 footprint compatibility with automated optical inspection.
Technical Context
This dual MOSFET integrates two matched N-channel die in a single exposed-drain thermally enhanced package, sharing common source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2). Its design enables synchronous rectification and dual-phase load switching with minimized conduction loss and fast turn-on/turn-off times (tD(ON) = 4.0 ns, tF = 8.0 ns).
The device supports high ambient operation up to +175°C junction temperature, with normalized RDS(ON) variation ≤1.8× across –55°C to +175°C and guaranteed 20.8 mJ avalanche energy (EAS) at L = 0.1 mH - critical for inductive load reliability in automotive and industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60V drain-source voltage without breakdown, suitable for 48V system rails and USB PD applications. |
| RDS(ON) @ 10V | 20 mΩ - Enables <1.5W conduction loss at 30A, reducing thermal stress in high-current load switches. |
| RDS(ON) @ 4.5V | 27 mΩ - Ensures robust low-voltage drive capability from 5V logic or microcontroller GPIOs. |
| ID (TC = 25°C) | 36.3 A - Supports high-current continuous operation when mounted on PCB with thermal pad soldered to copper plane. |
| EAS | 20.8 mJ - Validated avalanche energy rating ensures survivability during inductive switching transients in motor drives and converters. |
| TJ max | +175°C - Rated for under-hood automotive, industrial motor control, and high-temperature power supply environments. |
| Qg @ 10V | 14.3 nC - Low gate charge reduces driver power requirement and improves switching efficiency above 500 kHz. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, wettable flank leads for AOI.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires 1.3–2.5V threshold voltage swing. |
| 2 (S1) | Source of Channel 1 | Common source terminal shared with S2; forms low-impedance return path for both channels. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically connected to exposed thermal pad for heat dissipation. |
| 4 (D2) | Drain of Channel 2 | Second independent drain node; isolated from D1 but shares same thermal mass via common pad. |
| 5 (S2) | Source of Channel 2 | Electrically tied to S1 internally; enables dual-channel parallel or complementary configuration. |
| 6 (G2) | Gate of Channel 2 | Independent gate input for second channel; identical threshold and capacitance to G1. |
| 7–8 (Exposed Pad) | Common Drain / Thermal Slug | Primary thermal path to PCB; must be soldered to ≥1 in² 2oz copper for RθJC = 3.8°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for unclamped inductive switching up to 20.4A IAS, eliminating field failure risk in flyback or buck-boost topologies. |
| Wettable flank leads | Side-wettable terminations enable automated optical inspection (AOI) of solder joint integrity without X-ray. |
| ESD-protected gate | ±10 µA IGSS leakage at ±16V confirms integrated gate protection diode, improving handling robustness. |
| +175°C operation | Guaranteed parametric performance and reliability up to maximum junction temperature, verified per AEC-Q101 stress tests. |
| Low Ciss/Crss | 825 pF input capacitance and 20.5 pF reverse transfer capacitance minimize Miller effect and improve switching controllability. |
Applications
| Wireless Charging Transmitter | Industrial DC-DC Load Switch |
|---|---|
|
Use Scenario: High-frequency resonant inverter stage in Qi-compliant 15W transmitter modules. IC Role / Device Role / Timing Role: Dual N-channel switch driving series-LC tank; synchronized gating controls phase and amplitude. Use Value: 27 mΩ RDS(ON) @ 4.5V enables direct MCU control; 20.8 mJ EAS withstands coil detuning transients. |
Use Scenario: Hot-swap and inrush current limiting in 24V/48V programmable power supplies. IC Role / Device Role / Timing Role: Back-to-back configured dual MOSFET for bidirectional blocking and soft-start sequencing. Use Value: Matched channel characteristics ensure balanced current sharing; +175°C rating supports sealed enclosure operation. |
| Automotive Body Control Module | Server PSU ORing FET |
|
Use Scenario: High-side power distribution for LED lighting and solenoid drivers in under-hood ECUs. IC Role / Device Role / Timing Role: Dual-channel high-side switch with independent enable; supports diagnostic current sensing via RDS(ON). Use Value: 60V VDSS accommodates load dump spikes; wettable flanks ensure solder joint reliability in thermal cycling. |
Use Scenario: ORing function in redundant 12V server power distribution units (PDUs). IC Role / Device Role / Timing Role: Low-loss forward conduction path with fast reverse recovery (tRR = 22.7 ns) for fault isolation. Use Value: 0.7V VSD body diode forward voltage minimizes conduction loss during reverse-bias transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6015LSDW-13 | Same die, but PowerDI3333-8 package (smaller footprint, higher RθJA = 70°C/W). | Limited to lower-power applications (<15W) due to reduced thermal mass and no wettable flanks. | Select when board space is constrained and peak current ≤18A; avoid for automotive under-hood use. |
| IPD95R1K2P7ATMA1 | Single-channel 950V SiC MOSFET, 1.2Ω RDS(ON), no integrated body diode. | Used in high-voltage PFC stages, not dual-switch load management; requires external anti-parallel diode. | Choose only for >400V systems requiring ultra-low Qg; incompatible for 60V dual-load switching. |
Compared with DMTH6015LSDW-13, the DMTH6015LPDW-13 delivers 30% lower RθJC and AOI-compatible leads for mission-critical assembly; versus IPD95R1K2P7ATMA1, it offers integrated dual topology and body diode - eliminating external components in 60V synchronous rectifiers.
Availability
DMTH6015LPDW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, industrial DC-DC load switches, and automotive body control modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMTH6015LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
This device belongs to Diodes' PowerMOS™ dual-channel portfolio, engineered specifically for thermally demanding, high-efficiency power switching in automotive, industrial, and computing applications.
FAQ
What is the maximum safe operating temperature for DMTH6015LPDW-13?
The device is rated for continuous operation up to +175°C junction temperature, with guaranteed electrical parameters across –55°C to +175°C. Derating curves in Figure 6 and Figure 7 confirm RDS(ON) remains within specification at full temperature range when mounted per recommended PCB layout (2 oz copper, 1-inch² thermal pad).
Does DMTH6015LPDW-13 support gate drive from 3.3V microcontrollers?
No - its gate threshold voltage (VGS(TH)) ranges from 1.3V to 2.5V, but RDS(ON) is not specified below 4.5V. At 3.3V, conduction resistance exceeds 40 mΩ (extrapolated from Figure 4), causing excessive heating. A 5V gate driver or level shifter is required for reliable switching.
How is the dual-channel configuration wired for back-to-back operation?
Connect S1 and S2 together as common source, tie G1 and G2 to independent control signals, and route D1 and D2 to opposite sides of the load. This configuration blocks bidirectional current flow until both gates are actively driven high, enabling hot-swap and reverse-polarity protection.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No - the exposed pad is internally connected to both D1 and D2 terminals. It must be soldered to a dedicated, non-grounded copper pour or a split-plane net matching the drain potential. Connecting it directly to system ground creates a short unless D1/D2 are grounded in the circuit.
DMTH6015LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.4A (Ta), 36.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 825pF @ 30V
- Power - Max:
- 2.6W (Ta), 39.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH6015LPDW-13 FAQ
1.How can I place an order for DMTH6015LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6015LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6015LPDW-13 reliable?
The price and inventory of DMTH6015LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6015LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMTH6015LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6015LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6015LPDW-13?
DMTH6015LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6015LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6015LPDW-13?
For technical support, including DMTH6015LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6015LPDW-13 requirements.
6.How does Aetrix verify that DMTH6015LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6015LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6015LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMTH6015LPDW-13?
All DMTH6015LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6015LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6015LPDW-13 part is unused and in its original packaging.
Return procedure for DMTH6015LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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