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Diodes Incorporated DMTH6015LPDWQ-13
- Part No.:
- DMTH6015LPDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6015LPDWQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 9.4A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:900
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Product details
Overview
DMTH6015LPDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated 60V VDSS, 20 mΩ RDS(ON) @ 10V, and 36.3A ID at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive power stages including wireless charging transmitters and synchronous rectification in DC-DC converters.
For engineers reviewing the DMTH6015LPDWQ-13 datasheet, DMTH6015LPDWQ-13 pinout, DMTH6015LPDWQ-13 application, or DMTH6015LPDWQ-13 equivalent, key selection criteria include its 175°C maximum junction temperature, wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, and low gate charge (14.3 nC @ 10V) enabling high-frequency switching with reduced drive loss.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single PowerDI5060-8/SWP (Type UXD) thermally enhanced package with exposed drain pads. Its symmetric internal layout supports half-bridge or dual-switch topologies without cross-coupling, and the ESD-protected gate ensures robust handling during assembly.
The device operates with gate threshold voltage of 1.3–2.5 V and exhibits normalized RDS(ON) variation ≤1.8× across –55°C to +175°C, enabling stable conduction in under-hood automotive environments. Its Ciss = 825 pF and Qgd/Qgs ratio of ~1.33 support clean turn-on/turn-off with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48V automotive bus systems with 25% safety margin against load dump transients. |
| RDS(ON) @ 10V | 14.3–20 mΩ - Enables <1.5 W conduction loss at 30 A, critical for thermal management in compact DC-DC modules. |
| ID (TC = 25°C) | 36.3 A - Sustains peak current in synchronous buck output stages without derating below 100°C case temperature. |
| Qg @ 10V | 14.3 nC - Reduces gate driver power demand and allows use of low-cost 1-A drivers at 500 kHz switching frequency. |
| EAS | 20.8 mJ - Withstands repetitive inductive energy spikes up to 20.4 A avalanche current, eliminating need for external snubbers. |
| TJ max | +175°C - Permits operation in engine control units and ADAS ECUs where ambient exceeds 125°C. |
| Ciss | 825 pF - Limits capacitive loading on gate drivers while maintaining fast dV/dt immunity (>20 V/ns). |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection. Dimensions per Diodes Package Outline DWG #UXD (5.15 × 6.40 mm footprint, 1.0 mm height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain 1) | Power Drain Terminal (Channel 1) | Internally connected to exposed copper pad; primary heat path to PCB; requires full-solder coverage for RθJC = 3.8°C/W performance. |
| 5 (Source 1) | Source Node (Channel 1) | Low-inductance return path for high-side switch in half-bridge; routed separately to minimize ground bounce. |
| 6 (Gate 1) | Control Input (Channel 1) | ESD-protected gate with ±16 V rating; requires <1.5 Ω series resistance to suppress ringing during 10 ns rise time. |
| 7 (Source 2) | Source Node (Channel 2) | Independent source terminal enables floating configuration for high-side switch or dual low-side control. |
| 8 (Gate 2) | Control Input (Channel 2) | Electrically isolated from Gate 1; supports independent PWM timing for phase-shifted or interleaved topologies. |
| Drain 2 (Pad) | Power Drain Terminal (Channel 2) | Shared with Drain 1 via internal metal; both channels share same thermal node and voltage reference. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness to 20.4 A/20.8 mJ without screening failure-critical for unregulated input DC-DC stages. |
| Wettable flank terminals | Enables AOI verification of solder fillet height on all 8 side pins, reducing field returns from voided joints in automotive reflow profiles. |
| 175°C rated junction | Validated operation at full current up to +175°C TJ, supporting placement near power inductors or in sealed enclosures without forced air. |
| Low Qgd/Qgs ratio | 2.8 nC / 2.1 nC = 1.33 - Minimizes Miller plateau duration, improving controllability during hard switching and reducing EMI generation. |
| AEC-Q101 qualification | Passed stress tests including HTGB, HTRB, TC, UHAST, and ESD-HBM ≥2 kV-required for functional safety-compliant vehicle subsystems. |
Applications
| Wireless Charging Transmitter | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-efficiency 15W Qi-compliant transmitter operating at 110–205 kHz with synchronous rectification feedback. IC Role / Device Role / Timing Role: Dual N-channel switch implementing half-bridge inverter driving series-resonant tank; one channel controls upper switch, other handles lower switch with dead-time control. Use Value: 20 mΩ RDS(ON) reduces conduction loss by >35% vs. discrete alternatives, while 14.3 nC Qg enables precise 5 ns dead-time control without gate driver oversizing. |
Use Scenario: 12V-to-5V/3.3V synchronous buck converter in body control module with 92% efficiency target at 5 A load. IC Role / Device Role / Timing Role: Dual low-side switch replacing two discrete MOSFETs; one channel drives main power FET, second handles auxiliary rail or pre-bias startup circuit. Use Value: Shared thermal pad maintains ΔT < 5°C between channels under 30 A pulsed load, preventing thermal runaway and enabling single heatsink design. |
| Engine Control Unit (ECU) Power Stage | ADAS Camera Power Supply |
|
Use Scenario: 48V-to-12V intermediate bus converter in turbocharger actuator ECU exposed to under-hood temperatures up to +150°C ambient. IC Role / Device Role / Timing Role: Dual N-channel configured as active clamp forward converter primary switches with bidirectional current capability. Use Value: +175°C rating and 100% UIS testing ensure reliable operation during cold cranking transients (up to 60 V surge) without derating. |
Use Scenario: Compact 5V/2A power supply for 8MP automotive camera module mounted behind rearview mirror with limited airflow. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent enable control for image sensor and ISP, with soft-start sequencing. Use Value: Wettable flank terminals allow 100% AOI pass rate on 0.4 mm pitch PCBs, meeting ASIL-B traceability requirements for camera safety functions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC028N06NS3 G | Single-channel 60V MOSFET (2.8 mΩ @ 10V); no integrated dual topology or wettable flanks. | Requires two separate packages and additional layout area; lacks AEC-Q101 PPAP documentation. | Select when higher RDS(ON) tolerance permits discrete layout and cost-driven sourcing dominates thermal density needs. |
| Vishay SiZF300DT | Dual N-channel 30V (3.0 mΩ @ 10V); lower voltage rating and no 175°C qualification. | Not suitable for 48V systems or under-hood placement; limited to infotainment or lighting modules. | Choose only for 12V/24V non-critical loads where board space is constrained but thermal stress is low. |
Compared with BSC028N06NS3 G and SiZF300DT, DMTH6015LPDWQ-13 uniquely delivers dual-channel integration, AEC-Q101 PPAP readiness, and 175°C operation in a single wettable-flank package-enabling smaller, safer, and more thermally resilient automotive power designs without compromising qualification rigor.
Availability
DMTH6015LPDWQ-13 is available at Aetrix Electronics and suitable for automotive wireless charging, engine control unit (ECU) power conversion, and ADAS camera power supply applications requiring stable component supply, long-term lifecycle assurance, and full AEC-Q101 compliance documentation.
Supply support for DMTH6015LPDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMTH6015LPDWQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion stages demanding high temperature resilience, avalanche robustness, and zero-defect manufacturing traceability.
FAQ
What is the maximum continuous drain current for DMTH6015LPDWQ-13 at 100°C case temperature?
The maximum continuous drain current is 25.6 A when VGS = 10 V and TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased RDS(ON) at elevated temperatures, and assumes proper PCB copper area per Diodes' recommended layout.
Does DMTH6015LPDWQ-13 support synchronous rectification in isolated flyback converters?
Yes-it is commonly used as a dual low-side synchronous rectifier in automotive flyback converters. Its matched RDS(ON) channels, low Qg, and 175°C rating allow direct replacement of Schottky diodes, improving efficiency by 3–5% at 5–10 A loads while maintaining reliability under transient overvoltage conditions.
How does the wettable flank feature improve manufacturing yield?
The wettable flank geometry exposes vertical sidewalls of all eight terminals, enabling automated optical inspection (AOI) systems to verify solder fillet height and wetting angle. This eliminates reliance on X-ray for joint quality assessment, reducing test time by ~40% and increasing first-pass yield in automotive SMT lines using lead-free SAC305 paste.
Can DMTH6015LPDWQ-13 be used in a high-side switch configuration?
No-it lacks an integrated level-shifting driver or bootstrap diode; its gate threshold (1.3–2.5 V) and VGSS rating (±16 V) require external gate drive referenced to source potential. For high-side use, it must be paired with a dedicated high-side driver IC or isolated gate transformer, not operated directly from ground-referenced PWM.
DMTH6015LPDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 9.4A (Ta), 36.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 825pF @ 30V
- Power - Max:
- 2.6W (Ta), 39.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH6015LPDWQ-13 FAQ
1.How can I place an order for DMTH6015LPDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6015LPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6015LPDWQ-13 reliable?
The price and inventory of DMTH6015LPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6015LPDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6015LPDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6015LPDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6015LPDWQ-13?
DMTH6015LPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6015LPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6015LPDWQ-13?
For technical support, including DMTH6015LPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6015LPDWQ-13 requirements.
6.How does Aetrix verify that DMTH6015LPDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6015LPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6015LPDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6015LPDWQ-13?
All DMTH6015LPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6015LPDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6015LPDWQ-13 part is unused and in its original packaging.
Return procedure for DMTH6015LPDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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