Diodes Incorporated DMTH6016LFDFW-13

Overview

DMTH6016LFDFW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (SWP) package, rated for continuous drain current of 9.4A at 25°C and 6.6A at 100°C, with R_DS(ON) of 18mΩ @ V_GS = 10V and 27.5mΩ @ V_GS = 4.5V, operating up to +175°C junction temperature - deployed in automotive DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMTH6016LFDFW-13 datasheet, DMTH6016LFDFW-13 pinout, DMTH6016LFDFW-13 application, or DMTH6016LFDFW-13 equivalent, key selection criteria include high-temperature reliability (+175°C rating), low-profile 0.6mm package, AEC-Q101 qualification, unclamped inductive switching capability, and gate charge (Q_g = 15.3nC @ 10V) for efficient switching in space-constrained power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching performance: total gate charge is 15.3nC at V_GS = 10V, with Q_gd = 3.5nC and turn-off delay time t_D(OFF) = 14.5ns under standard test conditions (V_DS = 30V, R_g = 6Ω, I_D = 10A).

Thermally, it delivers 2.3W power dissipation on a 1-inch² copper pad (R_θJA = 63°C/W), and features robust avalanche capability: I_AS = 15.3A and E_AS = 11.7mJ with L = 0.1mH - validated per AEC-Q101 stress testing for automotive-grade reliability.

Key Specifications

Pinout & Package

U-DFN2020-6 (SWP) (Type F) is a 6-terminal leadless plastic package with exposed thermal pad, 0.6mm profile, and matte tin–annealed copper leadframe. Pin numbering follows bottom-view orientation with Pin 1 marked by product type code "66".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMTH6016LFDFW-13, DMN6016LFG-7 trades thermal performance for legacy package compatibility, while NTMFS6H826PL offers lower R_DS(ON) at the cost of increased gate drive energy and board area - making DMTH6016LFDFW-13 optimal for space-constrained, high-temperature automotive power stages where thermal resistance and profile are critical.

Availability

DMTH6016LFDFW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial motor control circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH6016LFDFW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive-Qualified Power MOSFET family, engineered specifically for high-reliability, high-temperature power conversion in engine control, body electronics, and lighting systems.

FAQ

What is the maximum allowable gate-source voltage for DMTH6016LFDFW-13?

The absolute maximum V_GS rating is ±20V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 12V maximum in production designs, with transient spikes clamped using Zener diodes or integrated gate protection circuits.

Does DMTH6016LFDFW-13 include an integrated body diode, and what is its forward voltage?

Yes, it includes a parasitic body diode with typical V_SD = 0.85V at I_S = 10A and T_J = 25°C. The diode is rated for continuous source-drain current of 3.0A and pulsed current of 70A, supporting synchronous rectification and freewheeling functions in buck and flyback topologies.

How is thermal performance affected when the exposed pad is not soldered to a PCB copper plane?

Without thermal pad connection, R_θJA degrades from 63°C/W (with 1-inch² copper) to 141°C/W (standard FR-4). This reduces maximum continuous power dissipation from 2.3W to 1.06W at 25°C ambient - limiting usable current to ~4.8A before exceeding 175°C junction temperature.

Is DMTH6016LFDFW-13 suitable for use in life support devices?

No. Per Diodes Incorporated's Important Notice, this device is explicitly not authorized for use in life support devices or systems without express written approval from the CEO. Its qualification covers AEC-Q101 automotive stress tests but excludes ISO 13485 medical device requirements or fault-tolerant safety architecture validation.