Diodes Incorporated DMTH6016LFDFWQ-7R

Overview

DMTH6016LFDFWQ-7R from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in U-DFN2020-6 (SWP) package, rated for +175°C operation, with R_DS(ON) = 18 mΩ @ V_GS = 10 V and 27.5 mΩ @ V_GS = 4.5 V, delivering 9.4 A continuous drain current at 25°C - deployed in automotive DC-DC converters and power management circuits.

For engineers reviewing the DMTH6016LFDFWQ-7R datasheet, DMTH6016LFDFWQ-7R pinout, DMTH6016LFDFWQ-7R application, or DMTH6016LFDFWQ-7R equivalent, key selection criteria include its 100% UIS-tested ruggedness, low-profile 0.6 mm height, 4 mm² PCB footprint, sidewall plating for optical inspection, and IATF 16949-manufactured traceability for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for high-temperature automotive environments, supporting gate drive at 4.5 V and 10 V with guaranteed R_DS(ON) across -55°C to +175°C junction range. Its 141°C/W R_θJA (min pad) and 63°C/W R_θJA (1-inch copper) enable thermal design flexibility in space-constrained modules.

The device integrates a robust body diode with t_RR = 20.8 ns and Q_RR = 11.4 nC under 100 A/µs di/dt, and features C_iss = 925 pF, C_oss = 242 pF, and Cr_ss = 25.4 pF at V_DS = 30 V - enabling fast switching with controlled EMI in synchronous buck stages.

Key Specifications

Pinout & Package

U-DFN2020-6 (SWP) (Type F) is a 2.0 mm × 2.0 mm × 0.6 mm leadless package with six terminals, featuring an exposed thermal pad on the bottom surface and sidewall-plated leads for automated optical inspection. The package meets IPC-7351B standard for solder paste stencil design and supports reflow per J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with BSC014N06LS3G and NTMFS4C09NT1G, DMTH6016LFDFWQ-7R uniquely balances ultra-compact size, +175°C operation, full AEC-Q101 compliance, and production-tested UIS - making it optimal for space- and temperature-constrained safety-critical automotive subsystems where footprint and qualification are non-negotiable.

Availability

DMTH6016LFDFWQ-7R is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power switching requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH6016LFDFWQ-7R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' automotive-qualified Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine bays, ADAS modules, and body electronics - emphasizing AEC-Q101 compliance, PPAP readiness, and IATF 16949 traceability.

FAQ

What is the maximum allowable PCB copper area required to achieve the 63°C/W R_θJA thermal rating?

The 63°C/W R_θJA value is measured with a 1-inch square (25.4 mm × 25.4 mm) 2 oz copper pad connected to the exposed thermal pad. This area must be solid, unbroken, and directly soldered to the device's thermal pad using ≥6 vias (0.3 mm diameter) to inner ground planes for optimal heat spreading.

Does DMTH6016LFDFWQ-7R support gate drive from a 3.3 V microcontroller without level shifting?

No - the gate threshold voltage V_GS(TH) ranges from 1 V to 3 V, but R_DS(ON) is not specified below V_GS = 4.5 V. At 3.3 V, the device operates in weak inversion with unpredictable R_DS(ON) and high dynamic losses; a 5 V or 10 V gate driver is required for reliable switching.

How is the "SWP" designation in U-DFN2020-6 (SWP) defined in Diodes' packaging nomenclature?

"SWP" stands for "Sidewall Plated," indicating that all six terminal edges are electroplated with matte tin over copper, enabling automated optical inspection (AOI) of solder fillets. This differs from standard U-DFN packages lacking sidewall metallization, which rely solely on top-surface inspection.

Is the 100% UIS test performed per JEDEC JESD24-11, and what test conditions are used?

Yes - the UIS test follows JEDEC JESD24-11 methodology: single-pulse inductive switching with L = 0.1 mH, I_AS = 15.3 A, and E_AS = 11.7 mJ at T_J = 25°C. Each unit undergoes this stress test during final production screening, with pass/fail determined by post-test parametric verification of R_DS(ON), V_GS(TH), and leakage.