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Diodes Incorporated DMTH6016LFVW-7
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- Part No.:
- DMTH6016LFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH6016LFVW-7.pdf
- Description:
- MOSFET N-CH 60V 41A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,489
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Product details
Overview
DMTH6016LFVW-7 from Diodes Incorporated is a 60V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI3333-8 package, with RDS(ON) = 16 mΩ @ VGS = 10V and 27 mΩ @ VGS = 4.5V, delivering 41A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in DC-DC converters and backlighting circuits where thermal robustness and low conduction loss are critical.
For engineers reviewing the DMTH6016LFVW-7 datasheet, DMTH6016LFVW-7 pinout, DMTH6016LFVW-7 application, or DMTH6016LFVW-7 equivalent, this page delivers verified electrical parameters, thermal performance data, wettable flank package details, JEDEC-qualified reliability metrics, and automotive-grade alternative options for high-ambient-temperature power designs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while maintaining fast switching (tD(ON) = 3.9 ns, tD(OFF) = 14.3 ns) and low gate charge (Qg = 15.1 nC @ VGS = 10V). Its 100% unclamped inductive switching rating supports rugged operation in flyback and synchronous rectifier topologies.
The device features a thermally enhanced PowerDI3333-8 package with exposed drain pad, achieving RθJC = 3.7°C/W and enabling stable operation up to +175°C junction temperature. Gate threshold voltage (VGS(TH) = 1–2.5 V) ensures compatibility with 3.3V and 5V logic-level drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; suitable for 48V bus and PoE-powered systems. |
| RDS(ON) @ 10V | 16 mΩ - Enables ≤0.65 W conduction loss at 41A; reduces heatsink requirements in compact DC-DC modules. |
| RDS(ON) @ 4.5V | 27 mΩ - Supports direct 3.3V/5V microcontroller gate drive without level-shifting in low-voltage power stages. |
| ID (TC = 25°C) | 41 A - Continuous drain current rating under ideal heatsinking; defines maximum steady-state power delivery capability. |
| TJ max | +175°C - Extended junction temperature rating enables operation in engine control units, LED drivers, and industrial motor drives. |
| Qg @ 10V | 15.1 nC - Low total gate charge minimizes driver power loss and improves efficiency in high-frequency (>500 kHz) switching applications. |
| EAS | 12.8 mJ - Avalanche energy rating validates robustness against inductive kickback in relay drivers and solenoid controls. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for automated optical inspection. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), weight ≈ 0.03 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Connected to exposed copper pad on bottom; primary thermal path to PCB; requires ≥2.6 mm² 2oz copper pour for RθJA = 63°C/W. |
| S (Source) | Reference node for gate drive and current return | Three parallel source terminals reduce parasitic inductance; critical for minimizing ringing in high-dI/dt switching. |
| G (Gate) | Control input for channel modulation | Single gate terminal with low RG = 1.4 Ω; compatible with standard gate drivers without external series resistance. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated to 16 A avalanche current and 12.8 mJ energy; eliminates need for external snubbers in boost and flyback converters. |
| Wettable Flank Terminals | Matte tin-annealed leads enable reliable solder-joint inspection via AOI; reduces field failure risk in automotive and industrial assembly lines. |
| +175°C Junction Rating | Qualified per AEC-Q101; supports under-hood automotive modules and high-temperature industrial sensors without derating. |
| Green, Halogen-Free Construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb; meets RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity for zero bake requirement. |
Applications
| Automotive LED Headlamp Driver | Industrial 48V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-side switching of multi-string white LEDs in adaptive driving beam (ADB) systems requiring PWM dimming up to 20 kHz. IC Role / Device Role / Timing Role: Primary power switch controlling current flow through LED strings; handles repetitive 10 µs pulses with 160 A peak pulsed current capability. Use Value: Low RDS(ON) minimizes thermal rise in confined headlamp housings; +175°C rating ensures reliability across ambient temperatures from −40°C to +125°C. |
Use Scenario: Main synchronous rectifier in isolated 48V-to-12V buck converter powering industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switching element operating at 300 kHz with 15.1 nC gate charge enabling efficient drive with minimal Miller effect. Use Value: 27 mΩ RDS(ON) @ 4.5V allows direct MCU GPIO control; wettable flanks ensure solder joint integrity during reflow in high-volume manufacturing. |
| Medical Portable Infusion Pump Power Stage | Telecom PoE++ Class 8 PD Interface |
|
Use Scenario: Motor driver H-bridge half-bridge leg in battery-powered infusion pumps requiring ultra-low standby current and EMI control. IC Role / Device Role / Timing Role: High-efficiency switching transistor managing bidirectional current in stepper/solenoid actuation; rated for 100% UIS stress events. Use Value: 1 µA IDSS at 48V ensures negligible leakage during sleep mode; 128°C/W RθJA supports natural-convection cooling in sealed enclosures. |
Use Scenario: Primary switch in PoE++ (IEEE 802.3bt Type 4) powered device interface handling up to 71.3W input power. IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling inrush current during PD classification and power-up sequencing. Use Value: 60V VDSS provides 20% margin over 57V PoE++ maximum; 160 A pulsed drain current withstands transient surges during cable insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6016LFVWQ-7 | Identical silicon die, qualified to AEC-Q101 Grade 0 (−40°C to +175°C); same RDS(ON), Qg, and thermal specs. | Required for automotive production; includes extended reliability testing (HTOL, TC, UHAST) and PPAP documentation. | Select when automotive qualification, traceability, or zero-defect manufacturing protocols are mandated. |
| DMN6016LFG-7 | Same RDS(ON) and VDSS, but in smaller PowerDI5060-8 package (RθJC = 4.5°C/W); lower ID max = 35A @ 25°C. | Better suited for space-constrained consumer electronics; reduced thermal mass limits sustained high-current operation. | Choose for compact portable devices where board area is critical and peak current stays below 35A. |
Compared with DMTH6016LFVW-7, the DMTH6016LFVWQ-7 adds automotive qualification without sacrificing performance, while the DMN6016LFG-7 trades thermal capacity for footprint reduction-making the original optimal for industrial power stages needing both density and thermal headroom.
Availability
DMTH6016LFVW-7 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48V DC-DC converters, and telecom PoE++ powered devices requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH6016LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered for high-efficiency, high-temperature switching in demanding power conversion and load-switching applications where thermal resilience and process consistency are essential.
FAQ
What is the maximum allowable gate-source voltage for DMTH6016LFVW-7?
The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full enhancement or 4.5 V for logic-level compatibility, with transient spikes clamped using Zener diodes if necessary.
Does DMTH6016LFVW-7 require a heatsink in typical applications?
A dedicated heatsink is not required when mounted on a 2 oz copper FR-4 PCB with ≥1-inch² thermal pad, which achieves RθJA = 63°C/W. Under those conditions and at 20A continuous current, junction temperature rise is ~1260°C/W × 20A² × 0.016Ω ≈ 40°C above ambient-well within the +175°C limit. Forced air or heatsinks become necessary only above 30A or in enclosed, high-ambient environments.
How does the wettable flank feature improve manufacturing yield?
The wettable flank design exposes vertical sidewalls of the source and drain terminals with matte tin plating, enabling automated optical inspection (AOI) systems to detect solder fillet height, bridging, and voiding with >99.5% accuracy. This eliminates reliance on X-ray for hidden-joint verification and reduces rework rates in high-volume SMT lines for automotive and medical electronics.
Can DMTH6016LFVW-7 be used in synchronous rectification topologies?
Yes-it is explicitly validated for synchronous rectification in DC-DC converters, supported by its low RDS(ON), fast switching times (tR = 6.3 ns, tF = 5.9 ns), and body diode recovery characteristics (tRR = 22 ns, QRR = 12 nC). Its 100% UIS rating also protects against reverse recovery stress during light-load discontinuous conduction mode transitions.
DMTH6016LFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 939 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH6016LFVW-7 FAQ
1.How can I place an order for DMTH6016LFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6016LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6016LFVW-7 reliable?
The price and inventory of DMTH6016LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6016LFVW-7 is usually 5 days.
3.What payment methods are accepted for DMTH6016LFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6016LFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6016LFVW-7?
DMTH6016LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6016LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6016LFVW-7?
For technical support, including DMTH6016LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6016LFVW-7 requirements.
6.How does Aetrix verify that DMTH6016LFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMTH6016LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6016LFVW-7 meets industry standards.
7.What is the process for return or replacement of DMTH6016LFVW-7?
All DMTH6016LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6016LFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6016LFVW-7 part is unused and in its original packaging.
Return procedure for DMTH6016LFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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