Diodes Incorporated DMTH6016LFVWQ-13

Overview

DMTH6016LFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 16 mΩ R_DS(ON) @ V_GS = 10 V and 41 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports automotive DC-DC converters, backlighting, and power-management functions with 100% production-tested UIS robustness.

For engineers reviewing the DMTH6016LFVWQ-13 datasheet, DMTH6016LFVWQ-13 pinout, DMTH6016LFVWQ-13 application, or DMTH6016LFVWQ-13 equivalent, key selection criteria include its wettable flank package for optical inspection, 3.7°C/W R_θJC, 12.3 mΩ typical R_DS(ON), AEC-Q101 qualification, and 15.1 nC total gate charge at V_GS = 10 V.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its 60 V V_DSS, ±20 V V_GSS, and 12.3–16 mΩ on-resistance range (at V_GS = 10 V) support stable operation under transient load conditions in 12 V/24 V vehicle systems.

The device integrates a robust body diode with 33 A continuous forward current rating and 22 ns reverse-recovery time, enabling efficient synchronous rectification and freewheeling in buck and boost topologies. Its 1.4 Ω gate resistance and 939 pF input capacitance are tuned for controlled turn-on/turn-off behavior with standard gate drivers.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG and IXTQ36N60P, DMTH6016LFVWQ-13 uniquely balances AEC-Q101 compliance, wettable flank manufacturability, 3.7°C/W thermal resistance, and 16 mΩ on-resistance in a 3.3 mm × 3.3 mm footprint - making it optimal for volume automotive power stages requiring zero-defect assembly and high-temperature reliability.

Availability

DMTH6016LFVWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and body control module load switching requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for DMTH6016LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power portfolio, engineered specifically for AEC-Q101-compliant 12 V/24 V/48 V power conversion and load switching in harsh-temperature environments.

FAQ

What is the maximum allowable gate-source voltage for DMTH6016LFVWQ-13?

The absolute maximum V_GS rating is ±20 V, per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement and -5 V to -10 V for fast turn-off, avoiding Miller plateau instability.

Does DMTH6016LFVWQ-13 require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt, especially in high-frequency switching. The device's internal 1.4 Ω gate resistance helps, but external 5–10 Ω resistors are typically used with 3.3 V or 5 V logic-level drivers to limit peak gate current and prevent overshoot.

How does the wettable flank feature improve manufacturing yield?

The wettable flank design exposes vertical sidewalls of the source and drain terminals, enabling automated optical inspection (AOI) systems to verify solder fillet formation and joint completeness - eliminating reliance on X-ray for hidden-joint validation and reducing final-test escapes in automotive SMT lines.

Can DMTH6016LFVWQ-13 replace older SO-8 MOSFETs in existing designs?

Yes, with PCB layout revision: the PowerDI3333-8 has identical 3.3 mm × 3.3 mm footprint but different pinout (D-D-D-D-G-S-S-S vs. SO-8's G-D-S-G-D-S-G-D) and requires updated thermal pad and solder stencil. Electrical replacement is viable due to superior R_DS(ON), thermal performance, and AEC-Q101 status.