Diodes Incorporated DMTH6016LFVWQ-13-A

Overview

DMTH6016LFVWQ-13-A from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated 60V V_DSS, 16mΩ R_DS(ON) @ 10V V_GS, and 41A I_D at T_C = +25°C. It delivers robust switching performance in automotive power-management functions, DC-DC converters, and LED backlighting under high ambient temperatures up to +175°C.

For engineers reviewing the DMTH6016LFVWQ-13-A datasheet, DMTH6016LFVWQ-13-A pinout, DMTH6016LFVWQ-13-A application, or DMTH6016LFVWQ-13-A equivalent, this page provides verified thermal resistance (R_θJC = 3.7°C/W), unclamped inductive switching (UIS) qualification, wettable flank geometry for AOI, and AEC-Q101 PPAP-capable manufacturing evidence - all critical for automotive-grade design-in and production validation.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching with Q_g = 15.1nC @ 10V and t_F = 5.9ns. Its 100% production-tested UIS capability ensures reliability in inductive load switching, while the thermally enhanced PowerDI3333-8 package enables efficient heat transfer via the exposed drain pad.

The device features gate threshold voltage V_GS(TH) of 1–2.5V and exhibits stable R_DS(ON) over temperature (normalized variation <2× from −55°C to +175°C). Its body diode has V_SD = 0.7–1.2V @ 1A and t_RR = 22ns, supporting synchronous rectification and freewheeling in high-frequency DC-DC topologies.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for automated optical inspection. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), weight ≈ 0.03 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG, DMTH6016LFVWQ-13-A offers superior board-level integration via PowerDI3333-8's wettable flanks and smaller footprint, while maintaining AEC-Q101 compliance and lower gate charge (15.1nC vs. ~30nC), enabling simpler gate drive design in space-constrained ECUs.

Availability

DMTH6016LFVWQ-13-A is available at Aetrix Electronics and suitable for automotive LED backlighting, 48V DC-DC conversion, and engine control unit power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH6016LFVWQ-13-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-temperature switching in 12V/48V vehicle architectures, emphasizing thermal robustness, production-tested ruggedness, and manufacturability in automated SMT lines.

FAQ

What is the maximum allowable gate-source voltage for DMTH6016LFVWQ-13-A?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±12V risks permanent gate oxide damage. For reliable 10V logic-level drive, use a gate driver with tight voltage regulation and transient suppression, especially in noisy automotive environments where load dump or ISO 7637-2 pulses may induce overshoot.

Does DMTH6016LFVWQ-13-A require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on Q_g = 15.1nC and typical 12V gate drive, a 4.7Ω to 10Ω resistor balances switching speed (t_F ≈ 5.9ns) and EMI. Lower values increase shoot-through risk in half-bridge configurations; higher values degrade efficiency in high-frequency DC-DC converters.

How does the wettable flank feature impact solder reflow and inspection processes?

The wettable flank geometry exposes vertical sidewalls of all four terminals, enabling automated optical inspection (AOI) to verify solder fillet formation and voiding. During reflow, it promotes uniform wetting and reduces head-in-pillow defects. No process changes are needed - standard SnAgCu profiles and stencil apertures apply, but IPC-A-610 Class 3 acceptance criteria must be used for automotive builds.

Can DMTH6016LFVWQ-13-A be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(ON) (normalized variation increases with T_J) enables inherent current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors, and thermal coupling via shared copper pour are mandatory. Derate total current by ≥20% versus sum of individual ratings to account for parametric spread and thermal imbalance.