Diodes Incorporated DMTH6016LFVWQ-7

Overview

DMTH6016LFVWQ-7 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 16 mΩ R_DS(ON) at V_GS = 10 V and 41 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports automotive backlighting, DC-DC converters, and power-management functions.

For engineers reviewing the DMTH6016LFVWQ-7 datasheet, DMTH6016LFVWQ-7 pinout, DMTH6016LFVWQ-7 application, or DMTH6016LFVWQ-7 equivalent, key selection criteria include its wettable flank package for optical inspection, 100% production-tested UIS robustness, thermal resistance of 3.7°C/W (junction-to-case), and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (1–2.5 V) enables reliable turn-on with 4.5 V logic-level drive, while 15.1 nC total gate charge at V_GS = 10 V balances switching speed and drive loss.

The device integrates a body diode with 0.7–1.2 V forward voltage at 1 A and supports unclamped inductive switching up to 16 A/12.8 mJ. Its PowerDI3333-8 package features an exposed drain pad for thermal conduction and wettable flanks for automated optical inspection of solder joints.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H); weight ≈ 0.03 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL135N6F7AG and IPB120N06S4-02, DMTH6016LFVWQ-7 uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and PowerDI3333-8's compact 3.3×3.3 mm footprint-making it optimal for space-constrained, high-volume automotive modules requiring zero-defect solder joint verification.

Availability

DMTH6016LFVWQ-7 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48 V DC-DC converters, and engine control unit power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH6016LFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMTH series targets AEC-Q101-compliant power MOSFETs for automotive subsystems where thermal resilience, production-tested ruggedness, and manufacturability (e.g., wettable flanks) are mandatory design requirements.

FAQ

What is the maximum allowable gate-source voltage for DMTH6016LFVWQ-7?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp V_GS within −12 V to +15 V during switching transients, especially in high-noise automotive environments where coupled noise could induce overshoot.

Does DMTH6016LFVWQ-7 support logic-level gate drive?

Yes-it has a gate threshold voltage range of 1.0–2.5 V and delivers 27 mΩ R_DS(ON) at V_GS = 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers. However, full performance (16 mΩ) requires 10 V gate drive, so level-shifting may be needed in low-voltage control architectures.

How is the PowerDI3333-8 package thermally optimized for automotive use?

The package uses an exposed drain pad that serves as both electrical connection and primary thermal path to the PCB. With R_θJC = 3.7°C/W and wettable flanks ensuring full-solder-joint coverage, it achieves superior thermal transfer versus standard SO-8 packages-critical for sustained operation at 175°C junction temperature in confined ECU housings.

Is DMTH6016LFVWQ-7 suitable for reverse-polarity protection circuits?

No-it is an N-channel MOSFET intended for high-side or low-side switching with proper gate biasing. For reverse-polarity protection, a P-channel device or dedicated protection IC is required. Using this part in reverse-battery configurations would forward-bias the body diode, causing uncontrolled current flow and potential failure.