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Diodes Incorporated DMTH6016LK3Q-13
- Part No.:
- DMTH6016LK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH6016LK3Q-13.pdf
- Description:
- MOSFET N-CH 60V 10.8 TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:5,746
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Product details
Overview
DMTH6016LK3Q-13 from Diodes Incorporated is a 60V, 46.9A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, AEC-Q101 qualified for automotive power management. It delivers 17mΩ RDS(ON) at VGS = 10V and operates up to +175°C junction temperature, enabling use in high-reliability DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMTH6016LK3Q-13 datasheet, DMTH6016LK3Q-13 pinout, DMTH6016LK3Q-13 application, or DMTH6016LK3Q-13 equivalent, key selection criteria include its 100% unclamped inductive switching rating, low Qgd × RDS(ON) figure-of-merit (FOM), and thermal performance under TC = +100°C derating.
Technical Context
This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss and fast switching in automotive-grade power stages. Its gate threshold voltage (1–3V) enables robust drive compatibility with 3.3V/5V microcontrollers and dedicated gate drivers.
The device integrates a body diode with 1.2V forward voltage at 1A and 22ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and boost topologies. Thermal resistance RθJC = 2.5°C/W ensures efficient heat transfer to PCB copper or external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands transient overvoltage up to 60V in automotive 12V/24V systems without breakdown. |
| RDS(ON) @ VGS = 10V | 17mΩ max - Limits conduction loss to ≤7.9W at 46.9A, critical for thermally constrained DC-DC modules. |
| RDS(ON) @ VGS = 4.5V | 24mΩ max - Ensures usable on-resistance with logic-level gate drive in space-constrained infotainment power rails. |
| ID (TC = +25°C) | 46.9A - Supports high-current load switching when mounted on infinite heatsink per JEDEC JESD51-2. |
| TJ Operating Range | −55°C to +175°C - Enables deployment in engine bay, transmission control, and under-hood lighting modules. |
| EAS | 11.7mJ - Sustains repetitive avalanche energy events in inductive load switching without parametric shift. |
| Qg @ VGS = 10V | 17nC - Determines gate driver current requirement (~1.7A peak for 10ns turn-on with 1Ω source impedance). |
Pinout & Package
Package: TO252 (DPAK), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC MO-236AB: D = 6.10mm, E = 6.58mm, H = 9.91mm, L = 1.59mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel channel | Reference node for gate drive; connects to low-side return path; carries full load current in high-side switch configurations with level-shifting. |
| Pin 2 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires <±20V absolute rating compliance and ESD protection during handling. |
| Pin 3 (Drain) | High-side output terminal | Connects to input rail or inductive load; electrically tied to exposed metal tab for thermal dissipation and current conduction. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect reliability testing. |
| 100% unclamped inductive switching (UIS) | Guaranteed operation under worst-case inductive turn-off stress without failure-critical for solenoid and motor driver designs. |
| Low Qgd × RDS(ON) FOM | ~73 mΩ·nC - Balances switching speed and conduction loss, reducing total power loss in 100–500kHz DC-DC converters. |
| +175°C maximum junction temperature | Enables placement near heat sources (e.g., power inductors, processors) without thermal derating penalties in compact modules. |
| Halogen- and antimony-free "Green" construction | Meets EU RoHS 3 (2015/863/EU) and automotive environmental standards with <900ppm Br/Cl and <1000ppm Sb. |
Applications
| Automotive Body Control Module (BCM) | LED Headlamp Driver |
|---|---|
|
Use Scenario: High-side switching of 12V loads including door locks, window lifts, and HVAC actuators in BCM subassemblies. IC Role / Device Role / Timing Role: Power switch controlling load current with PWM dimming capability and short-circuit protection response. Use Value: 17mΩ RDS(ON) minimizes resistive heating during continuous 10A operation, extending PCB lifetime in sealed enclosures. |
Use Scenario: Constant-current regulation and PWM dimming for multi-string automotive LED headlamps. IC Role / Device Role / Timing Role: Low-side switch in buck converter topology, synchronized to 200kHz controller for precise current ripple control. Use Value: 22ns body diode tRR reduces cross-conduction loss and EMI during high-frequency switching, improving EMC compliance. |
| Start-Stop System DC-DC Converter | Electric Power Steering (EPS) Auxiliary Supply |
|
Use Scenario: Primary switch in 12V-to-5V/3.3V isolated or non-isolated buck converter powering MCU and sensors during engine cranking. IC Role / Device Role / Timing Role: Main power transistor operating at 300kHz with 46.9A peak current capability during cold-crank transients. Use Value: 11.7mJ EAS withstands repeated 40V–60V load dump surges without parameter drift or failure. |
Use Scenario: Secondary-side synchronous rectifier in EPS 48V-to-12V bidirectional converter supplying torque assist electronics. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss in high-duty-cycle operation. Use Value: 1.2V VSD at 1A and 24mΩ RDS(ON) at 4.5V gate drive enable efficient operation with 3.3V logic-level controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60V, 220A rated, 1.7mΩ RDS(ON) @ 10V, PowerFLAT 5x6 package; higher current, lower RDS(ON), but larger footprint and no AEC-Q101 documentation publicly available. | Targeted at high-power traction inverters-not validated for PPAP or IATF 16949 traceability. | Select when board space allows larger package and ultra-low RDS(ON) outweighs qualification requirements. |
| IXTP50N10P | 100V, 50A, 20mΩ RDS(ON) @ 10V, TO-220 package; higher voltage rating but lacks AEC-Q101, +175°C rating, and UIS validation. | Suitable for industrial 24V/48V systems only; not approved for automotive safety-critical functions. | Choose only for non-automotive prototypes where voltage margin >40V is required and thermal design accommodates TO-220 mounting. |
Compared with STL220N6F7 and IXTP50N10P, DMTH6016LK3Q-13 uniquely combines AEC-Q101 qualification, +175°C operation, and documented UIS robustness in a compact TO252 footprint-making it the only option qualified for production automotive power management where both reliability and size constraints apply.
Availability
DMTH6016LK3Q-13 is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, start-stop DC-DC converters, and electric power steering auxiliary supplies requiring stable component supply across extended product lifecycles.
Supply support for DMTH6016LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability automotive subsystems including power distribution, lighting, and ADAS power conditioning.
FAQ
What is the maximum allowable gate-source voltage for DMTH6016LK3Q-13?
The absolute maximum VGS rating is ±20V. Exceeding this value risks permanent gate oxide damage. In practice, gate drive should be limited to +10V to +15V for optimal RDS(ON) and safe margin, with negative bias ≤ −5V during turn-off to prevent spurious turn-on from dv/dt coupling.
Does DMTH6016LK3Q-13 require a gate resistor, and if so, what value is recommended?
Yes-a gate resistor is required to control dV/dt and suppress ringing. For 100–500kHz switching with a 1Ω driver output impedance, a 2.2Ω to 4.7Ω series resistor balances turn-on speed (tD(ON) ≈ 3.4ns) and EMI suppression. Lower values increase peak gate current; higher values slow switching and raise dynamic losses.
How is thermal performance affected when mounted on standard FR-4 versus an infinite heatsink?
On 2oz FR-4 with 1-inch² copper pad, RθJA = 47°C/W limits continuous power to ~3.2W at +25°C ambient. On an infinite heatsink (RθJC = 2.5°C/W), it supports 60W at TC = +25°C-enabling 46.9A continuous current. PCB layout must prioritize thermal vias under the drain tab to approach heatsink-level performance.
Is the body diode suitable for synchronous rectification in a buck converter?
Yes-the body diode has VSD = 0.9–1.2V at 1A and tRR = 22ns, making it viable for low-frequency (<200kHz) synchronous rectification. However, for >300kHz operation, external Schottky or GaN FETs are preferred due to lower forward drop and faster recovery than the integrated body diode.
DMTH6016LK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.8A (Ta), 46.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 864 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMTH6016LK3Q-13 FAQ
1.How can I place an order for DMTH6016LK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6016LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6016LK3Q-13 reliable?
The price and inventory of DMTH6016LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6016LK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMTH6016LK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6016LK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6016LK3Q-13?
DMTH6016LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6016LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6016LK3Q-13?
For technical support, including DMTH6016LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6016LK3Q-13 requirements.
6.How does Aetrix verify that DMTH6016LK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6016LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6016LK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMTH6016LK3Q-13?
All DMTH6016LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6016LK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6016LK3Q-13 part is unused and in its original packaging.
Return procedure for DMTH6016LK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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