Diodes Incorporated DMTH6016LPD-13

Overview

DMTH6016LPD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type C) package, rated for 60V V_DSS, 19mΩ R_DS(ON) @ 10V V_GS, and continuous 33.2A drain current at T_C = +25°C. It operates up to +175°C junction temperature and is AEC-Q qualified for automotive engine-management and body control systems.

For engineers reviewing the DMTH6016LPD-13 datasheet, DMTH6016LPD-13 pinout, DMTH6016LPD-13 application, or DMTH6016LPD-13 equivalent, key selection criteria include its dual-channel layout, low R_DS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, and thermal performance on FR-4 with exposed drain pad.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices in a single thermally enhanced PowerDI5060-8 package with shared exposed drain pad. Each channel supports 60V breakdown voltage, 15.3A avalanche current (L = 0.1mH), and exhibits 27pF Crss and 864pF Ciss at V_DS = 30V - enabling fast switching in synchronous buck and half-bridge topologies.

The device uses trench-gate technology to achieve 14.5mΩ typical R_DS(ON) @ 10V and 20.9mΩ @ 4.5V, with gate threshold voltage tightly distributed between 1.0V and 2.5V. Its 4°C/W R_θJC and 58°C/W R_θJA (FR-4, 2oz Cu) support high-power density designs in constrained thermal environments.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type C), surface-mount, thermally enhanced with exposed drain pad (pins 1, 4, 5, 6, 7, 8 connected to internal drain terminals). Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMTH6016LPDQ-13, the base part offers identical electrical and thermal performance but lacks AEC-Q101 certification documentation; versus IPD80R1K4P7SAUMA1, it delivers dual-channel integration, lower R_DS(ON), and superior thermal coupling - making it optimal for space-constrained, high-reliability 48V automotive power stages.

Availability

DMTH6016LPD-13 is available at Aetrix Electronics and suitable for engine-management systems, body control electronics, and DC-DC converters requiring stable component supply across automotive Tier-1 production ramps and industrial control upgrades.

Supply support for DMTH6016LPD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The DMTH6016LPD belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-temperature, high-efficiency power switching in engine and chassis control units where thermal resilience and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for DMTH6016LPD-13 at 100°C case temperature?

The maximum continuous drain current is 23.7A at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(ON) at elevated temperatures, and assumes proper PCB copper area and thermal vias to maintain case temperature.

Does DMTH6016LPD-13 support logic-level gate drive at 3.3V?

No - the gate threshold voltage range is 1.0V to 2.5V, but R_DS(ON) is not characterized below V_GS = 4.5V. At 3.3V, the device will be partially enhanced with significantly higher on-resistance (>100mΩ estimated), leading to excessive conduction loss and thermal risk; use only with ≥4.5V gate drive.

How is the exposed drain pad electrically configured in the PowerDI5060-8 package?

All drain terminals (pins 3, 4, 7, 8) and the bottom-exposed metal pad are internally shorted to form a single low-inductance, high-current drain node. This configuration provides a unified thermal and electrical path for both channels, enabling efficient heat transfer to the PCB and minimizing loop inductance in high-speed switching.

Can DMTH6016LPD-13 replace a single-channel 60V MOSFET in an existing design?

Yes, but only if the circuit uses one channel and leaves the second unused - with G2 tied to S2 and S2 grounded. However, layout must preserve thermal pad soldering and avoid floating gate nodes. For new designs, full utilization of both channels (e.g., half-bridge or dual load switch) delivers better power density and cost efficiency than two single-channel devices.