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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6016LPSWQ-13

Name: DMTH6016LPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH6016LPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6016LPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH6016LPSWQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI506

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Product details

Overview

DMTH6016LPSWQ-13 from Diodes Incorporated is a 60V, 16mΩ (at V_GS = 10V), AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for continuous operation up to +175°C junction temperature and delivering 37.1A at T_C = +25°C - designed for high-reliability automotive power management, DC-DC converters, and motor control circuits.

For engineers reviewing the DMTH6016LPSWQ-13 datasheet, DMTH6016LPSWQ-13 pinout, DMTH6016LPSWQ-13 application, or DMTH6016LPSWQ-13 equivalent, this part supports high-temperature automotive systems requiring low R_DS(ON), fast switching (t_F = 7ns), thermally efficient thermal resistance (R_θJC = 4°C/W), and PPAP-capable supply chain traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low gate charge (Q_g = 17nC at V_GS = 10V) and minimized output capacitance (C_oss = 282pF), enabling high-efficiency synchronous rectification and PWM-driven motor control. Its 1.1mm profile and exposed drain pad support compact, thermally constrained PCB layouts.

The device integrates a robust body diode with t_RR = 22ns and Q_RR = 11nC, supporting bidirectional current handling in H-bridge and regenerative braking topologies. Gate threshold voltage (V_GS(TH) = 1–2.5V) ensures stable turn-on under wide-temperature automotive conditions (−55°C to +175°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands peak system voltages in 48V automotive architectures without avalanche breakdown.
R_DS(ON)	16mΩ @ V_GS = 10V - Limits conduction loss to ≤6.4W at 20A, critical for thermal budget in sealed ECUs.
I_D (T_C = 25°C)	37.1A - Supports high-current load switching in engine control modules and ADAS power stages.
Q_g	17nC @ V_GS = 10V - Enables <100ns total switching time with standard 1A gate drivers, reducing dynamic losses.
R_θJC	4°C/W - Allows direct heatsinking via exposed drain pad, achieving ≤70°C junction rise at 25W dissipation.
t_F	7ns - Minimizes shoot-through risk in half-bridge configurations operating above 200kHz.
E_AS	11.7mJ - Sustains single-pulse inductive energy during fault events (e.g., motor stall) without failure.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.40 × 1.10 mm (L × W × H), 0.097g mass, UL 94V-0 molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (D)	Internally paralleled high-current path connected to exposed copper pad - primary heat transfer interface and main power return.
7	Source (S)	Low-side reference node for gate drive; ties to PCB ground plane to minimize common-source inductance.
8	Gate (G)	High-impedance control input; requires <1.3Ω series resistance to damp ringing due to low C_iss (864pF).

Key Features

Feature	Design Value
+175°C rated junction temperature	Enables deployment in under-hood environments (e.g., transmission control units) without derating below 125°C ambient.
16mΩ R_DS(ON) @ 10V	Reduces I²R losses by ≥35% versus comparable 25mΩ MOSFETs, extending battery runtime in 12V/48V hybrid systems.
PowerDI5060-8 thermal package	Delivers 9× lower R_θJA (49°C/W) than SO-8 equivalents, eliminating need for external heatsinks in space-constrained modules.
Fast body diode recovery (t_RR = 22ns)	Prevents cross-conduction in synchronous buck converters operating >500kHz, improving efficiency by 1.2% at full load.
AEC-Q101 qualification + PPAP support	Validates reliability for automotive safety-critical functions (ASIL-B compatible design flow and test coverage).

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12V-to-5V/3.3V point-of-load regulation in vehicle infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology, switching at 250–500kHz.

Use Value: 16mΩ R_DS(ON) and 7ns fall time reduce conduction + switching losses by 28% vs. legacy TO-252 devices, enabling fanless enclosure design.

Use Scenario: Three-phase inverter driving 300W brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutated with 20kHz PWM and dead-time control.

Use Value: 175°C rating and 4°C/W R_θJC sustain 22A RMS current without thermal throttling during sustained steering assist events.

Engine Control Unit (ECU) Load Switching

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: High-side power switch controlling fuel injector solenoids and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Protected load driver with integrated clamp diode, driven by microcontroller GPIO with 10V gate boost.

Use Value: 15.3A avalanche current rating and 11.7mJ E_AS absorb inductive kickback without external TVS, simplifying BOM.

Use Scenario: Isolated auxiliary supply (12V/2A) powering OBC control logic and CAN transceivers during AC charging.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter, operating at 65kHz with ZVS capability.

Use Value: Low C_oss (282pF) and Crss (27pF) enable zero-voltage switching across 90–264VAC input range, improving light-load efficiency by 4.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	60V, 2.2mΩ @ 10V, PowerFLAT 5x6 - lower R_DS(ON) but higher Q_g (42nC) and no AEC-Q101 documentation on public datasheet.	Preferred for ultra-low-loss 48V bus switches where gate drive strength permits higher Q_g; not validated for PPAP release.	Select when R_DS(ON) dominates thermal design and AEC-Q101 documentation is non-mandatory.
IPB180N06S4-02	60V, 1.8mΩ @ 10V, TO-263 - superior R_DS(ON) but 4.5mm height and 2× R_θJA (95°C/W), requiring heatsink.	Suitable for under-dash modules with vertical clearance; unsuitable for thin ECU housings (<1.3mm profile required).	Choose only if board-level thermal constraints allow larger footprint and height, and cost-per-watt is prioritized over size.

Compared with STL220N6F7AG and IPB180N06S4-02, DMTH6016LPSWQ-13 uniquely balances AEC-Q101 compliance, 1.1mm profile, and 16mΩ R_DS(ON) - making it optimal for space-constrained, PPAP-governed automotive modules where thermal density and qualification rigor are co-primary requirements.

Availability

DMTH6016LPSWQ-13 is available at Aetrix Electronics and suitable for automotive power management, DC-DC converters, and motor controls requiring stable component supply across production lifecycles exceeding 15 years.

Supply support for DMTH6016LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for automotive, industrial, computing, and consumer markets, with ISO/TS 16949-certified manufacturing.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability vehicle subsystems including engine management, ADAS, and electrification systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6016LPSWQ-13 supports 26.2A continuous drain current at T_C = +100°C per its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(ON) at elevated temperatures, verified under steady-state TC measurement conditions with proper PCB copper area.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes - a 1.3Ω to 10Ω gate resistor is recommended to control dV/dt and suppress high-frequency ringing caused by low gate resistance (R_G = 1.3Ω typical) and fast switching edges. Diodes' application note AP02011 specifies 4.7Ω as optimal for CISPR 25 Class 5 radiated emissions in 12V automotive systems.

Can DMTH6016LPSWQ-13 replace older TO-252 MOSFETs in existing designs?

Direct replacement is feasible only with PCB layout revision: the PowerDI5060-8/SWP has different pad geometry, thermal pad size, and terminal count (8 vs. 3 pins). While electrical specs align, mechanical compatibility requires updated stencil and footprint - Diodes provides IPC-7351-compliant land patterns in their package outline document DS46030.

Is the body diode suitable for synchronous rectification in a 48V buck converter?

Yes - its 22ns reverse recovery time and 11nC Q_RR meet requirements for synchronous rectification up to 300kHz in 48V input buck converters. However, external Schottky diode parallel is recommended for >400kHz operation to avoid tail current losses during hard commutation.

DMTH6016LPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Ta), 37.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 864 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 37.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH6016LPSWQ-13 FAQ

1.How can I place an order for DMTH6016LPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6016LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6016LPSWQ-13 reliable?

The price and inventory of DMTH6016LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6016LPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6016LPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6016LPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6016LPSWQ-13?

DMTH6016LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6016LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6016LPSWQ-13?

For technical support, including DMTH6016LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6016LPSWQ-13 requirements.

6.How does Aetrix verify that DMTH6016LPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6016LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6016LPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6016LPSWQ-13?

All DMTH6016LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6016LPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6016LPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH6016LPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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