Diodes Incorporated DMTH6016LSDQ-13

Overview

DMTH6016LSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V V_DSS, 19.5mΩ R_DS(ON) at V_GS = 10V, and 7.6A continuous drain current at 25°C. It supports automotive power management, DC-DC converters, and motor control with AEC-Q101 qualification and 175°C operation.

For engineers reviewing the DMTH6016LSDQ-13 datasheet, DMTH6016LSDQ-13 pinout, DMTH6016LSDQ-13 application, or DMTH6016LSDQ-13 equivalent, key selection criteria include dual-channel thermal robustness, low R_DS(ON) at 4.5V gate drive, unclamped inductive switching rating, and SO-8 footprint compatibility with high-temperature PCB layouts.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing a common source configuration (S1/S2 tied internally per SO-8 pinout), enabling half-bridge or synchronous rectifier topologies without external paralleling. Its 100% UIS-rated avalanche capability (15.3A/11.7mJ) ensures reliability under transient overloads in automotive switching nodes.

The device delivers stable R_DS(ON) across -55°C to +175°C (normalized to ≤2.0× at 175°C), with low input capacitance (C_iss = 864pF) and fast switching (t_r = 5.2ns, t_f = 7ns), optimized for high-frequency DC-DC conversion above 500kHz.

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, green molding compound (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMTH6016LSDQ-13, the -7 variant offers identical performance in smaller reels for validation, while DMN6016LSDQ-13 provides full cross-compatibility with no design change-both maintain the same 175°C rating, 60V breakdown, and dual-channel SO-8 layout critical for space-constrained automotive modules.

Availability

DMTH6016LSDQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and brushless DC motor drivers requiring stable component supply with AEC-Q101 compliance and long-term lifecycle assurance.

Supply support for DMTH6016LSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1959.

This device belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for high-temperature, high-reliability automotive power switching where robustness under transient stress and long-term parametric stability are mandatory.

FAQ

What is the maximum continuous drain current for each channel at 100°C ambient?

At T_A = +100°C and V_GS = 10V, the maximum continuous drain current per channel is 5.4A. This value is derived from thermal derating curves in the datasheet and assumes mounting on a 2oz FR-4 board with thermal bias to a 1-inch square copper plate, ensuring safe junction temperature below 175°C.

Is the SO-8 package lead-free and RoHS compliant?

Yes, DMTH6016LSDQ-13 is fully lead-free and RoHS 2 compliant (2011/65/EU), with matte tin annealed finish over copper leadframe. It meets Diodes Incorporated's "Green" definition: bromine <900ppm, chlorine <900ppm (total Br+Cl <1500ppm), and antimony <1000ppm, verified per JESD22-A112 test standards.

How is the dual-channel configuration wired internally?

The device contains two fully independent N-channel MOSFETs in one SO-8 package. Pin 1 = D1, Pin 2 = S1, Pin 3 = G1, Pin 4 = S2, Pin 5 = G2, Pin 6 = D2. Sources S1 and S2 are separate terminals-not internally connected-enabling flexible half-bridge, dual high-side, or independent load-switch configurations.

Does this MOSFET require external gate resistors for automotive PWM operation?

Yes, external gate resistors are required to control dV/dt and prevent shoot-through in bridge configurations. The datasheet specifies R_g = 6Ω for timing measurements; typical design uses 5–10Ω series resistance per gate to limit peak gate current (<±2A) and damp ringing, especially with 12V automotive gate drivers.