Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH61M5SPSW-13

Part No.:
DMTH61M5SPSW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH61M5SPSW-13.pdf
Description:
MOSFET BVDSS: 41V~60V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,909

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH61M5SPSW-13 from Diodes Incorporated is a 60V, 225A N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, featuring 1.5mΩ RDS(ON) at VGS = 10V, rated for +175°C operation, and optimized for high-current load switching in automotive power management systems.

For engineers reviewing the DMTH61M5SPSW-13 datasheet, DMTH61M5SPSW-13 pinout, DMTH61M5SPSW-13 application, or DMTH61M5SPSW-13 equivalent, key selection criteria include RDS(ON) stability over temperature, UIS ruggedness, wettable flank inspection capability, and AEC-Q101 qualification status for under-hood deployment.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching (tD(ON) = 11.3ns, tD(OFF) = 86.2ns) and low gate charge (Qg = 130.6nC). Its 0.9°C/W RθJC enables high-power dissipation when mounted on thermally enhanced PCBs with exposed drain pad soldering.

The device integrates a robust body diode (IS = 225A, tRR = 70.4ns, QRR = 127nC) and passes 100% production UIS testing (EAS = 640.8mJ), making it suitable for inductive load switching where voltage transients exceed VDSS.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Withstands up to 60V drain-source blocking voltage before avalanche conduction begins.
RDS(ON) max 1.5mΩ @ VGS = 10V - Enables <1W conduction loss at 225A, critical for high-efficiency power distribution.
ID max 225A @ TC = +25°C - Supports high-current load switching without external heatsink under controlled case temperature.
TJ range −55°C to +175°C - Qualified for under-hood automotive environments where ambient exceeds 125°C.
Ciss 8306pF @ VDS = 30V - Low input capacitance reduces gate drive power and improves switching efficiency in high-frequency DC-DC stages.
EAS 640.8mJ - Confirmed unclamped inductive switching energy rating ensures reliability in motor driver and solenoid control applications.

Pinout & Package

Package: PowerDI5060-8 (SWP) - surface-mount, thermally enhanced 8-pin leadframe package with exposed drain pad for low thermal resistance (RθJC = 0.9°C/W) and wettable flank terminals enabling automated optical inspection (AOI).

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads) Drain (D) Eight parallel drain connections tied to large exposed copper pad - provides current sharing, low-inductance path, and primary thermal conduction to PCB.
Pin 1 (top-left corner marker) Source (S) Primary source terminal; used for low-side sensing and gate drive reference in high-side configurations with bootstrap supply.
Pin 2 (adjacent to Pin 1) Gate (G) Control input requiring ≤10V threshold (VGS(TH) = 2–4V); low Rg = 3.0Ω supports fast turn-on/turn-off.

Key Features

Feature Design Value
+175°C rated junction temperature Enables direct placement in high-ambient zones (e.g., engine bay) without derating or forced cooling.
100% production UIS tested Guarantees minimum 35.8A avalanche current and 640.8mJ energy handling per unit-no screening failures in field use.
Wettable flank terminals Vertical sidewall plating allows AOI detection of solder fillet height and voiding-critical for automotive process validation.
Low RDS(ON) temperature coefficient RDS(ON) increases only ~1.8× from 25°C to 175°C (per Fig.6), ensuring stable current sharing in parallel configurations.
Halogen- and antimony-free "Green" construction Meets JESD22-A112 and RoHS 3 (2015/863/EU) with Br+Cl <1500ppm and Sb <1000ppm-compliant for global automotive supply chains.

Applications

Engine Start-Stop Systems Automotive Body Control Modules

Use Scenario: High-current battery disconnect during engine cranking to isolate infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: N-channel load switch controlling 200A+ main battery feed with <100ns response to enable/disable signals.

Use Value: 1.5mΩ RDS(ON) limits voltage drop to <300mV at 200A, preserving system voltage during cold-cranking events.

Use Scenario: Centralized power distribution for door modules, lighting, and seat controls in modern vehicle architectures.

IC Role / Device Role / Timing Role: High-side power switch managing multiple 12V loads with integrated diagnostics via current-sense feedback.

Use Value: 225A continuous rating and +175°C operation allow single-device consolidation of multiple lower-current switches-reducing BOM count and PCB area.

48V Mild Hybrid DC-DC Converters Electric Power Steering (EPS) Motor Drivers

Use Scenario: Primary synchronous rectifier in bidirectional 48V–12V buck-boost converters for energy recovery and load leveling.

IC Role / Device Role / Timing Role: Low-side switching element operating at 100–300kHz with minimal conduction and switching losses.

Use Value: Ciss = 8306pF and Qgd = 28.1nC enable efficient zero-voltage switching (ZVS) in resonant topologies, improving converter efficiency >96%.

Use Scenario: Half-bridge high-side switch in three-phase EPS inverters delivering peak torque assist during steering maneuvers.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged MOSFET handling repetitive inductive kickback from 30A motor windings.

Use Value: 100% UIS qualification and EAS = 640.8mJ eliminate need for external snubbers-reducing component count and failure modes in safety-critical steering systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPB017N10N5 from Infineon 100V VDSS, 1.7mΩ RDS(ON), TO-263-7 package, no wettable flanks Higher voltage margin but larger footprint and no AOI support; requires manual visual inspection Select when 100V blocking is mandatory and thermal budget allows higher RDS(ON) and larger package.
STL225N6F7 from STMicroelectronics 60V VDSS, 1.4mΩ RDS(ON), PowerFLAT 5x6 package, AEC-Q101 qualified, no UIS data published Marginally lower RDS(ON) but lacks production UIS test documentation and wettable flank capability Select when maximum efficiency is prioritized over ruggedness verification and automated optical inspection compliance.

Compared with IPB017N10N5 and STL225N6F7, DMTH61M5SPSW-13 uniquely combines 60V/1.5mΩ performance, +175°C rating, 100% UIS testing, and wettable flank terminals-making it the only option fully aligned with IATF 16949-compliant automotive manufacturing requirements for high-reliability load switching.

Availability

DMTH61M5SPSW-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH61M5SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-current switching in engine, chassis, and body electronics where thermal resilience and production test rigor are non-negotiable.

FAQ

Is DMTH61M5SPSW-13 AEC-Q101 qualified?

Yes. DMTH61M5SPSW-13 is qualified to AEC-Q101 Rev. E for stress testing including HTGB, HTRB, AC-H3TRB, TC, UHAST, and UIS. Full qualification reports are available upon request through Diodes Incorporated's automotive support portal.

What is the recommended PCB layout for thermal performance?

Use a minimum 1-inch² 2oz copper thermal pad connected to the exposed drain via ≥8 thermal vias (0.3mm diameter, filled and plated) to inner ground/power planes. Maintain 0.25mm solder mask opening around all wettable flank edges to ensure reliable AOI detection.

Does this MOSFET require gate resistors for automotive EMI compliance?

Yes. A 3.3Ω to 10Ω series gate resistor is recommended to dampen ringing caused by parasitic Lg/Ciss resonance. Layout must minimize gate loop area (<2mm²) and avoid routing near noisy power traces to meet CISPR 25 Class 5 emission limits.

Can DMTH61M5SPSW-13 be paralleled for higher current capacity?

Yes-its positive RDS(ON) temperature coefficient (Fig.6) ensures inherent current sharing. Use matched gate drive paths, symmetrical PCB routing, and identical thermal mounting for each device to maintain balance within ±5% current deviation at 225A per device.

DMTH61M5SPSW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
225A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8306 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.2W (Ta), 167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (SWP)

DMTH61M5SPSW-13 FAQ

1.How can I place an order for DMTH61M5SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH61M5SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH61M5SPSW-13 reliable?

The price and inventory of DMTH61M5SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH61M5SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMTH61M5SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH61M5SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH61M5SPSW-13?

DMTH61M5SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH61M5SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH61M5SPSW-13?

For technical support, including DMTH61M5SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH61M5SPSW-13 requirements.

6.How does Aetrix verify that DMTH61M5SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH61M5SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH61M5SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMTH61M5SPSW-13?

All DMTH61M5SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH61M5SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH61M5SPSW-13 part is unused and in its original packaging.

Return procedure for DMTH61M5SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH61M5SPSW-13 Tags

  • DMTH61M5SPSW-13
  • DMTH61M5SPSW-13 PDF
  • DMTH61M5SPSW-13 Datasheet
  • DMTH61M5SPSW-13 Specifications
  • DMTH61M5SPSW-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH61M5SPSW-13
  • Buy DMTH61M5SPSW-13
  • DMTH61M5SPSW-13 Price
  • DMTH61M5SPSW-13 Distributor
  • DMTH61M5SPSW-13 Supplier
  • DMTH61M5SPSW-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER