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Diodes Incorporated DMTH61M5SPSWQ-13
- Part No.:
- DMTH61M5SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH61M5SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:9,641
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Product details
Overview
DMTH61M5SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, delivering 1.5 mΩ RDS(ON) @ VGS = 10 V, 225 A continuous drain current at TC = +25°C, and rated for +175°C operation - deployed in automotive engine management and high-efficiency DC-DC converters.
For engineers reviewing the DMTH61M5SPSWQ-13 datasheet, DMTH61M5SPSWQ-13 pinout, DMTH61M5SPSWQ-13 application, or DMTH61M5SPSWQ-13 equivalent, key selection criteria include its 0.9°C/W RθJC, 100% production UIS testing, wettable flank terminals for automated optical inspection, and IATF 16949-certified manufacturing traceability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its 8306 pF Ciss and 28.1 nC Qgd support efficient hard-switching in synchronous buck topologies up to 300 kHz.
The device integrates a robust body diode with 70.4 ns tRR and 127 nC QRR, enabling reliable freewheeling in bidirectional DC-DC and motor control phases. Thermal design is anchored by a low 0.9°C/W junction-to-case resistance and exposed drain pad for direct heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and DC-DC primary-side switching. |
| RDS(ON) | 1.5 mΩ @ VGS = 10 V - Enables sub-0.5 W conduction loss at 200 A, critical for thermal budget in compact power modules. |
| ID (TC = +25°C) | 225 A - Continuous current rating supports high-power traction inverters and starter-generator systems without forced air cooling. |
| TJ Range | –55°C to +175°C - Validated operation across full automotive under-hood ambient range, including turbocharger proximity zones. |
| Qg | 130.6 nC - Gate drive energy requirement determines gate driver sizing and switching loss trade-off in 48 V mild-hybrid systems. |
| EAS | 640.8 mJ - Single-pulse avalanche energy rating ensures survivability during load dump transients and inductive kickback events. |
| RθJC | 0.9°C/W - Enables direct thermal coupling to heatsink; allows >150 W steady-state power dissipation with ≤135°C case temperature rise. |
Pinout & Package
Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D, 4×) | Main current path output / heat sink interface | Four parallel drain terminals connect to internal die's backside metal; all tied to exposed copper pad for low-inductance, high-current routing and thermal conduction. |
| Source (S, 4×) | Power return path / reference node | Four source terminals provide low-impedance return path to ground plane; distributed layout minimizes common-source inductance in high-dI/dt switching. |
| Gate (G, 1×) | Control input for channel modulation | Single gate terminal located adjacent to source cluster; optimized for <3 Ω gate resistance to suppress oscillation during 900 A pulsed operation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated for automotive safety-critical subsystems including engine control units and ADAS power domains. |
| 100% production UIS testing | Each unit passes unclamped inductive switching stress test, ensuring field reliability in motor drive fault conditions. |
| Wettable flank leads | Side-wettable terminations enable automated X-ray and AOI verification of solder fillet integrity on bottom-side pads. |
| +175°C maximum junction temperature | Enables placement near high-heat sources (e.g., exhaust manifolds) without derating in engine bay applications. |
| Low Coss (2735 pF) & Crss (184 pF) | Reduces turn-off losses and improves voltage transient immunity in high-frequency synchronous rectification. |
Applications
| Engine Control Unit (ECU) High-Side Driver | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: Switching 12 V battery power to fuel injector solenoids and ignition coils in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side N-channel MOSFET configured with charge pump gate driver to deliver precise 1–5 ms pulse-width modulated current bursts. Use Value: 1.5 mΩ RDS(ON) reduces coil activation loss by >40% vs. legacy 3.2 mΩ parts, improving cold-start reliability at –40°C. |
Use Scenario: Primary-side switch in bi-directional buck-boost converter linking 12 V starter battery and 48 V Li-ion auxiliary storage. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (200–300 kHz) phase-shifted full-bridge topology with ZVS capability. Use Value: 130.6 nC Qg and 28.1 nC Qgd enable <100 ns dead-time control, minimizing circulating current loss and improving peak efficiency to 97.2%. |
| Body Control Module (BCM) Load Switch | Electric Power Steering (EPS) Motor Inverter |
|
Use Scenario: Solid-state replacement for electromechanical relays controlling headlamps, HVAC blowers, and seat heaters. IC Role / Device Role / Timing Role: Low-side load switch with integrated current sensing and overtemperature shutdown via analog feedback pin. Use Value: 175°C rating permits integration into sealed BCM enclosures without external heatsinks, reducing system volume by 35%. |
Use Scenario: Half-bridge leg in three-phase inverter driving 3 kW brushless DC motor for steering assist torque generation. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) switch handling 250 A peak phase current with <50 ns switching transitions. Use Value: 640.8 mJ EAS withstands motor stall-induced inductive spikes, eliminating need for external snubbers and reducing BOM count by two components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL225N6F7AG | 60 V, 0.95 mΩ @ 10 V, PowerFLAT 5x6; lower RDS(ON) but no wettable flanks and only AEC-Q101 Grade 0 (–40°C to +150°C). | Limited to under-hood zones below 150°C; unsuitable for turbocharged engine bays requiring +175°C operation. | Select when ultra-low conduction loss dominates over thermal margin and optical inspection requirements. |
| IPB070N10N5ATMA1 | 100 V, 0.7 mΩ @ 10 V, TO-263-7; higher voltage rating but larger footprint, 1.2°C/W RθJC, and no AEC-Q101 PPAP documentation. | Used in commercial EV charging infrastructure; lacks automotive change control and IATF 16949 traceability. | Select only for non-automotive industrial DC-DC where 100 V margin and RoHS compliance are prioritized over automotive qualification. |
Compared with STL225N6F7AG and IPB070N10N5ATMA1, DMTH61M5SPSWQ-13 uniquely combines AEC-Q101 Grade 1 (+175°C), wettable flank inspection capability, and PPAP-ready documentation - making it the sole choice for safety-critical, thermally constrained automotive power stages requiring zero-defect manufacturing traceability.
Availability
DMTH61M5SPSWQ-13 is available at Aetrix Electronics and suitable for engine management systems, 48 V mild-hybrid DC-DC converters, and electric power steering motor inverters requiring stable component supply across multi-year automotive production cycles.
Supply support for DMTH61M5SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-current switching in engine, chassis, and electrification subsystems - emphasizing thermal robustness, production reliability, and automotive-grade change control.
FAQ
What is the maximum allowable gate-source voltage for DMTH61M5SPSWQ-13?
The absolute maximum VGS rating is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±15 V risks permanent gate oxide damage, especially during hot-plug or ESD events. Recommended gate drive is 10 V for optimal RDS(ON) and safe margin against overshoot.
Does DMTH61M5SPSWQ-13 require a gate resistor for stability?
Yes - a 3–5 Ω series gate resistor is recommended to dampen ringing caused by the 3.0 Ω intrinsic gate resistance interacting with PCB trace inductance. This prevents false turn-on during high dV/dt commutation and ensures clean 11.3 ns turn-on delay as specified.
How is thermal performance validated for this MOSFET in real PCB layouts?
Thermal data is measured on FR-4 with 2 oz copper and a 1-inch square thermal bias pad beneath the exposed drain. RθJC = 0.9°C/W assumes direct mounting to a heatsink; actual board-level RθJA varies from 47°C/W (no heatsink) to <5°C/W with 20 cm² copper pour and thermal vias - verified via JEDEC JESD51-14 transient dual-interface testing.
Can DMTH61M5SPSWQ-13 be used in paralleled configurations?
Yes - its positive temperature coefficient of RDS(ON) (see Figure 6) enables natural current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 100 mΩ source resistors for current balancing; up to four devices have been validated in 800 A EPS inverters.
DMTH61M5SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8306 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 167W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (SWP)
DMTH61M5SPSWQ-13 FAQ
1.How can I place an order for DMTH61M5SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH61M5SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH61M5SPSWQ-13 reliable?
The price and inventory of DMTH61M5SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH61M5SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH61M5SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH61M5SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH61M5SPSWQ-13?
DMTH61M5SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH61M5SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH61M5SPSWQ-13?
For technical support, including DMTH61M5SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH61M5SPSWQ-13 requirements.
6.How does Aetrix verify that DMTH61M5SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH61M5SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH61M5SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH61M5SPSWQ-13?
All DMTH61M5SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH61M5SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH61M5SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH61M5SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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