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Diodes Incorporated DMTH61M8LPS-13
- Part No.:
- DMTH61M8LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH61M8LPS-13.pdf
- Description:
- MOSFET N-CH 60V 225A PWRDI
- Quantity:
- Payment:
- Shipping:
Inventory:2,505
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Product details
Overview
DMTH61M8LPS-13 from Diodes Incorporated is a 60V, N-channel enhancement-mode power MOSFET in PowerDI5060-8 (Type K) package, rated for continuous drain current up to 225A at TC = +25°C, with RDS(ON) of 1.6mΩ @ VGS = 10V and 2.8mΩ @ VGS = 4.5V, operating up to +175°C - deployed in automotive engine management systems and high-current DC-DC converters.
For engineers reviewing the DMTH61M8LPS-13 datasheet, DMTH61M8LPS-13 pinout, DMTH61M8LPS-13 application, or DMTH61M8LPS-13 equivalent, key selection criteria include its 1.6mΩ on-resistance at 10V gate drive, 900A pulsed drain capability, 100% production-tested UIS robustness, and AEC-Q101 suitability for under-hood automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 10.3ns, tR = 23.9ns, Qg = 115.5nC @ VGS = 10V, and Ciss = 8320pF at VDS = 30V. Its thermal design centers on an exposed drain pad with RθJC = 0.8°C/W, enabling high-power dissipation in compact layouts.
The device integrates a low-VSD body diode (0.7–1.2V @ IS = 20A) with tRR = 64ns and QRR = 124nC, supporting synchronous rectification and hard-switched topologies. Its gate threshold voltage (VGS(TH) = 1–3V) ensures reliable turn-on with standard 4.5V or 10V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum blocking voltage before avalanche onset; supports 48V automotive bus and 54V transient clamping. |
| RDS(ON) @ 10V | 1.6mΩ - Enables <1W conduction loss at 225A; critical for minimizing heat generation in high-current power stages. |
| ID (TC=25°C) | 225A - Continuous drain current rating defined at case temperature; requires thermal interface to heatsink or PCB copper plane. |
| EAS | 605mJ - Single-pulse avalanche energy rating; validates ruggedness against inductive switching stress in motor drives. |
| TJ Range | −55°C to +175°C - Extended junction temperature range enables operation in engine bay and transmission control units. |
| Ciss | 8320pF - Input capacitance at VDS = 30V; determines gate drive strength requirement and switching speed trade-off. |
| Qg @ 10V | 115.5nC - Total gate charge; defines minimum gate driver current needed for fast turn-on in high-frequency converters. |
Pinout & Package
Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (Source) | Source connection (x4 pins) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| D (Drain) | Drain connection (x4 pins) | Four drain pins plus large exposed bottom pad provide low-inductance, high-current path to PCB ground plane. |
| G (Gate) | Gate input | Single gate terminal with 3Ω gate resistance; designed for direct drive from standard gate drivers without external series resistor. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Validated for continuous use in under-hood automotive environments where ambient exceeds 125°C. |
| 100% UIS tested | Every unit undergoes unclamped inductive switching test to ensure reliability in motor control and load dump conditions. |
| Low RDS(ON) @ 4.5V | 2.8mΩ enables efficient operation with 5V microcontroller outputs or automotive logic-level drivers. |
| Lead-free & halogen-free | RoHS 3 compliant with <900ppm Br/Cl and <1000ppm Sb; meets automotive green material requirements. |
| Fast body diode recovery | tRR = 64ns and QRR = 124nC minimize reverse recovery losses in synchronous buck and half-bridge topologies. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems requiring precise 12V–48V pulse control. IC Role / Device Role / Timing Role: Primary switching element handling peak currents >150A with sub-100ns turn-off for accurate fuel metering. Use Value: Low RDS(ON) minimizes voltage drop during long-duration pulses; +175°C rating ensures stability near hot exhaust manifolds. |
Use Scenario: High-current power distribution switch for HVAC blower motors, seat heaters, and lighting loads in modern vehicle architectures. IC Role / Device Role / Timing Role: Load switch controlling up to 200A resistive/inductive loads with integrated overcurrent and thermal protection. Use Value: 900A pulsed drain rating accommodates motor startup surges; 100% UIS testing prevents failure during load dump transients. |
| 48V Mild Hybrid DC-DC Converters | On-Board Charger (OBC) Input Stage |
|
Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V buck-boost converters used in 48V mild hybrid architectures. IC Role / Device Role / Timing Role: Low-side switch operating at 100–300kHz with tight dead-time control to maximize efficiency. Use Value: 1.6mΩ RDS(ON) reduces conduction loss below 0.5W at full load; low Qg/Ciss ratio enables fast, low-loss transitions. |
Use Scenario: AC-DC front-end switch in 6.6kW OBCs converting grid AC to 400V DC bus, operating in continuous conduction mode. IC Role / Device Role / Timing Role: High-current, high-voltage switching device in totem-pole PFC stage with soft-switching requirements. Use Value: 60V VDSS supports 400V bus with margin; EAS = 605mJ ensures survivability during line surge events and zero-crossing faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTN200N10L2 | 100V VDSS, 2.2mΩ @ 10V, TO-264 package, RθJC = 0.35°C/W | Higher voltage rating but larger footprint and higher gate charge (160nC); suited for 400V industrial inverters, not 48V automotive. | Select when >60V blocking is required and thermal budget allows larger heatsink; not drop-in for PowerDI5060-8 layout. |
| STL220N6F7 | 60V VDSS, 1.4mΩ @ 10V, PowerFLAT 8x8 HV package, RθJC = 0.9°C/W | Lower RDS(ON) but higher Ciss (9200pF) and no production UIS test; qualified to AEC-Q101 but lacks +175°C extended rating. | Prefer for cost-sensitive 12V/48V systems where ambient stays ≤150°C; avoid in engine-critical zones requiring full +175°C validation. |
Compared with IX TN200N10L2 and STL220N6F7, DMTH61M8LPS-13 uniquely balances ultra-low on-resistance, production-validated UIS robustness, and guaranteed +175°C operation in a compact surface-mount package - making it optimal for space-constrained, high-reliability automotive power stages.
Availability
DMTH61M8LPS-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48V mild hybrid DC-DC converters requiring stable component supply across automotive production lifecycles.
Supply support for DMTH61M8LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and product qualification per AEC-Q101.
This MOSFET belongs to Diodes' Automotive Power Solutions portfolio, engineered specifically for high-efficiency, high-reliability power conversion in demanding automotive environments including engine compartments and battery systems.
FAQ
What is the maximum allowable gate-source voltage for DMTH61M8LPS-13?
The absolute maximum VGS rating is ±20V. Operation beyond this risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10V for full enhancement or 4.5V for logic-level compatibility - both validated in datasheet RDS(ON) curves and SOA plots.
Does DMTH61M8LPS-13 require a gate resistor for safe operation?
A gate resistor is recommended to dampen ringing and control dV/dt, especially in high-di/dt applications. The device's intrinsic Rg is 3Ω, but typical designs use 2.2–10Ω external resistors to balance switching speed against EMI and shoot-through risk in half-bridge configurations.
Is DMTH61M8LPS-13 qualified to AEC-Q101?
Yes - Diodes Incorporated explicitly states that parts qualified to AEC-Q101, PPAP-capable, and manufactured in IATF 16949-certified facilities are available upon request. DMTH61M8LPS-13 meets AEC-Q101 Rev H for stress testing including HTGB, HTRB, and UIS, with full traceability documentation.
How is thermal performance affected by PCB layout for this PowerDI5060-8 device?
Thermal resistance RθJC = 0.8°C/W assumes direct thermal coupling from the exposed drain pad to a large copper area (≥1 inch², 2oz Cu). Reducing copper area or omitting thermal vias increases effective RθJA significantly - e.g., to 46°C/W on FR-4 with minimal copper - directly limiting achievable continuous current.
DMTH61M8LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8320 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 187.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH61M8LPS-13 FAQ
1.How can I place an order for DMTH61M8LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH61M8LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH61M8LPS-13 reliable?
The price and inventory of DMTH61M8LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH61M8LPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH61M8LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH61M8LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH61M8LPS-13?
DMTH61M8LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH61M8LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH61M8LPS-13?
For technical support, including DMTH61M8LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH61M8LPS-13 requirements.
6.How does Aetrix verify that DMTH61M8LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH61M8LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH61M8LPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH61M8LPS-13?
All DMTH61M8LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH61M8LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH61M8LPS-13 part is unused and in its original packaging.
Return procedure for DMTH61M8LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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