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Diodes Incorporated DMTH61M8LPSQ-13
- Part No.:
- DMTH61M8LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH61M8LPSQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:2,490
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Product details
Overview
DMTH61M8LPSQ-13 from Diodes Incorporated is an AEC-Q101 qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, rated for continuous drain current of 225A at TC = +25°C, RDS(ON) = 1.6mΩ @ VGS = 10V, and operation up to +175°C junction temperature - deployed in automotive engine management systems and high-efficiency DC-DC converters.
For engineers reviewing the DMTH61M8LPSQ-13 datasheet, DMTH61M8LPSQ-13 pinout, DMTH61M8LPSQ-13 application, or DMTH61M8LPSQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, low RDS(ON) at 4.5V gate drive (2.8mΩ), and thermal resistance RθJC = 0.8°C/W - critical for under-hood power stage reliability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its 1.6mΩ RDS(ON) at 10V and 2.8mΩ at 4.5V enables efficient operation with standard microcontroller gate drivers and supports high-frequency PWM in 48V/12V bidirectional DC-DC converters.
The device integrates a robust body diode with tRR = 64ns and QRR = 124nC, validated for synchronous rectification and freewheeling in hard-switched topologies. Its 0.8°C/W junction-to-case thermal resistance and exposed drain pad design enable direct heatsinking in compact power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V automotive bus with 25% voltage margin against load dump transients. |
| RDS(ON) @ VGS = 10V | 1.6mΩ - Enables ≤0.9W conduction loss at 225A, reducing thermal stress in high-current paths. |
| RDS(ON) @ VGS = 4.5V | 2.8mΩ - Ensures usable on-resistance with 3.3V/5V logic-level gate drivers without external level-shifting. |
| ID Continuous @ TC = +25°C | 225A - Matches peak current demands in starter-generator inverters and battery disconnect switches. |
| TJ Operating Range | –55°C to +175°C - Certified for under-hood placement in engine control units and transmission control modules. |
| EAS | 605mJ - Confirmed avalanche energy rating ensures survivability during inductive turn-off events in motor drives. |
| RθJC | 0.8°C/W - Allows direct thermal coupling to heatsink via exposed drain pad, enabling >150W power dissipation at ΔT = 120°C. |
Pinout & Package
Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D, pins 1, 2, 3, 4, 5, 6, 7, 8) | Main current path output / heat sink interface | All eight pins are internally connected to the drain; full perimeter connection maximizes current handling and thermal transfer to PCB copper. |
| Source (S, pins 1, 2, 3, 4, 5, 6, 7, 8) | Power return path / reference node | Shared source connections across all pins reduce loop inductance and improve EMI performance in high-dI/dt switching. |
| Gate (G, pin 1) | Control input for channel conduction | Single dedicated gate terminal located at corner position for minimized gate loop area and reduced Miller capacitance coupling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification + PPAP support | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% production UIS testing | Every unit undergoes unclamped inductive switching stress test - eliminates latent failure modes in motor drive and solenoid control applications. |
| Low Qg (115.5nC @ 10V) | Reduces gate driver power consumption and switching transition time, supporting >100kHz operation in high-efficiency DC-DC converters. |
| Green, halogen-free construction | Complies with RoHS 3 (2015/863/EU), <900ppm Br/Cl, <1000ppm Sb - meets Tier 1 automotive sustainability requirements. |
| Optimized Ciss/Coss ratio (8320pF / 2298pF) | Enables stable hard-switching behavior with minimal voltage overshoot and reduced snubber losses in buck and half-bridge topologies. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems requiring fast turn-on/turn-off and high transient immunity. IC Role / Device Role / Timing Role: Power switch controlling 12V solenoid actuation with 10μs pulse width and 10A peak current. Use Value: 64ns body diode reverse recovery and 1.6mΩ RDS(ON) minimize switching loss and thermal rise during repetitive pulsing at 100Hz. |
Use Scenario: 48V-to-12V DC-DC converter in vehicle lighting and infotainment power distribution. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage operating at 250kHz PWM frequency. Use Value: Low Qgd/Qg ratio (16.5nC/115.5nC) reduces shoot-through risk and improves light-load efficiency by >3% versus legacy MOSFETs. |
| Electric Power Steering (EPS) | Battery Disconnect Switches |
Use Scenario: H-bridge motor driver for 3-phase EPS assist motor, handling bidirectional 150A peak currents. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg with forced-air cooling and 10kHz switching. Use Value: 175°C max junction temperature and 0.8°C/W RθJC allow sustained 120A RMS operation without derating in confined EPS housing. |
Use Scenario: Main contactor replacement in 48V mild-hybrid battery management systems for automatic isolation during fault conditions. IC Role / Device Role / Timing Role: Solid-state high-current switch replacing electromechanical relay in BMS main power path. Use Value: 900A pulsed drain current rating and 605mJ EAS ensure reliable interruption of short-circuit faults up to 500A without destruction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(ON) = 1.4mΩ @ 10V, but only rated to +175°C with derated ID = 190A; no production UIS test data published. | Lacks AEC-Q101 PPAP documentation; requires additional qualification for Tier 1 automotive programs. | Prefer DMTH61M8LPSQ-13 where full PPAP compliance and documented UIS robustness are mandatory. |
| IXFH180N065T2 | Higher RDS(ON) = 2.2mΩ @ 10V, larger TO-220FP package, RθJC = 0.9°C/W - lower power density and less PCB space efficiency. | Requires mechanical mounting hardware and isolated heatsink; unsuitable for ultra-thin power modules. | Choose DMTH61M8LPSQ-13 for surface-mount, high-density automotive power stages with minimal thermal interface layers. |
Compared with STL220N6F7AG and IXFH180N065T2, DMTH61M8LPSQ-13 delivers superior thermal performance per unit area (0.8°C/W vs ≥0.9°C/W), guaranteed UIS validation, and full AEC-Q101 PPAP support - making it the preferred choice for space-constrained, safety-critical automotive power switching.
Availability
DMTH61M8LPSQ-13 is available at Aetrix Electronics and suitable for engine control units, 48V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.
Supply support for DMTH61M8LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, and consumer markets, with over 50 years of power device innovation.
This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for high-reliability automotive power conversion - emphasizing thermal resilience, avalanche ruggedness, and PPAP-ready manufacturability.
FAQ
What is the maximum allowable gate-source voltage for DMTH61M8LPSQ-13?
The absolute maximum VGS rating is ±20V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to –10V to +15V, with recommended turn-on at +10V and turn-off at 0V or –5V to suppress spurious conduction.
Does DMTH61M8LPSQ-13 require a gate resistor, and if so, what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on measured Rg = 3Ω and Qg = 115.5nC, a 5Ω to 10Ω series resistor is recommended for 100–250kHz switching in automotive DC-DC converters to balance switching speed and EMI.
How is thermal performance affected when mounted on a 1oz versus 2oz copper PCB?
Data sheet RθJA = 46°C/W assumes 2oz FR-4 with 1-inch² thermal pad. On 1oz copper, RθJA increases by ~25%, degrading power handling by ~20%. For 187.5W PD, minimum recommended copper weight is 2oz with solder-filled thermal vias to inner ground planes.
Can DMTH61M8LPSQ-13 be paralleled with identical units for higher current capacity?
Yes - its positive temperature coefficient of RDS(ON) (see Figure 6) ensures inherent current sharing. Parallel operation requires matched gate drive layout, identical trace lengths, and shared source routing. Derate total current by 15% for thermal margin in multi-device configurations.
DMTH61M8LPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8320 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 187.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type K)
DMTH61M8LPSQ-13 FAQ
1.How can I place an order for DMTH61M8LPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH61M8LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH61M8LPSQ-13 reliable?
The price and inventory of DMTH61M8LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH61M8LPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH61M8LPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH61M8LPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH61M8LPSQ-13?
DMTH61M8LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH61M8LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH61M8LPSQ-13?
For technical support, including DMTH61M8LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH61M8LPSQ-13 requirements.
6.How does Aetrix verify that DMTH61M8LPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH61M8LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH61M8LPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH61M8LPSQ-13?
All DMTH61M8LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH61M8LPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH61M8LPSQ-13 part is unused and in its original packaging.
Return procedure for DMTH61M8LPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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