Diodes Incorporated DMTH61M8SPS-13

Overview

DMTH61M8SPS from Diodes Incorporated is a 60V, 1.6mΩ (at V_GS = 10V), 215A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for +175°C operation and qualified for automotive-grade thermal reliability. It serves as a high-current load switch or synchronous rectifier in DC-DC converters and engine management systems, delivering low conduction loss and robust UIS performance.

For engineers reviewing the DMTH61M8SPS datasheet, DMTH61M8SPS pinout, DMTH61M8SPS application, or DMTH61M8SPS equivalent, key selection criteria include R_DS(ON) at elevated temperature, 100% production-tested UIS capability, junction-to-case thermal resistance of 0.9°C/W, and compatibility with high-ambient automotive power rails.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and fast switching, with gate charge Q_g = 130.6nC and reverse transfer capacitance C_rss = 184pF at V_DS = 30V. Its body diode exhibits t_RR = 70.4ns and Q_RR = 127nC under 100A/μs di/dt, enabling efficient hard-switched and synchronous rectification topologies.

The device operates across –55°C to +175°C junction range, with R_DS(ON) increasing to ~2.4mΩ at T_J = 175°C (normalized to 2.2× room-temp value). Thermal design leverages the exposed drain pad for direct PCB copper thermal coupling, achieving R_θJC = 0.9°C/W to the soldering point.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad on bottom side. Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTN210N10L2, DMTH61M8SPS offers superior board-level integration and lower conduction loss at 60V, while DMTH61M8SPSQ provides identical performance with added automotive qualification rigor-no trade-off in electrical behavior, only in compliance scope.

Availability

DMTH61M8SPS is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, long-lifecycle support, and automotive-grade thermal resilience.

Supply support for DMTH61M8SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for demanding automotive power switching applications where thermal robustness, avalanche capability, and compact packaging are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH61M8SPS supports 150A continuous drain current at T_C = +100°C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package and must be validated against actual PCB copper area and ambient conditions using the provided transient thermal resistance curve (Figure 13).

Is the body diode suitable for synchronous rectification?

Yes-the body diode has t_RR = 70.4ns and Q_RR = 127nC at 30A, with soft recovery characteristics confirmed in Figure 9. These parameters support use in synchronous buck converters up to 500kHz, though external Schottky diodes may still be preferred for ultra-low forward voltage in sub-1V output designs.

Does this part require a gate resistor for safe operation?

A gate resistor is recommended to control dI/dt and suppress oscillation. With Q_g = 130.6nC and typical gate driver rise time of 10ns, a 5–10Ω series resistor limits peak gate current to 10–15A and dV/dt to safe levels, especially when driving inductive loads or paralleling multiple devices.

How does the R_DS(ON) change over temperature?

R_DS(ON) increases linearly with junction temperature: it is ~1.1mΩ at 25°C, ~1.6mΩ at 100°C, and ~2.4mΩ at 175°C (per Figure 7). The positive temperature coefficient provides inherent current-sharing stability when paralleling devices, but system-level thermal design must ensure T_J stays within rated limits.