Diodes Incorporated DMTH61M8SPSQ-13

Overview

DMTH61M8SPSQ-13 from Diodes Incorporated is an AEC-Q101 qualified 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, delivering 1.1–1.6 mΩ R_DS(ON) at V_GS = 10 V, 215 A continuous drain current at T_C = +25°C, and rated for operation up to +175°C junction temperature - deployed in automotive engine management and DC-DC converters where high-current switching and thermal robustness are critical.

For engineers reviewing the DMTH61M8SPSQ-13 datasheet, DMTH61M8SPSQ-13 pinout, DMTH61M8SPSQ-13 application, or DMTH61M8SPSQ-13 equivalent, key selection criteria include its 100% production-tested UIS capability, low gate charge (130.6 nC), fast switching (t_F = 47.6 ns), body diode recovery performance (Q_RR = 127 nC), and IATF 16949-certified manufacturing traceability.

Technical Context

This MOSFET uses a trench-gate silicon process optimized for low R_DS(ON) and high avalanche ruggedness, with integrated body diode characterized for reverse recovery time (t_RR = 70.4 ns) and charge (Q_RR = 127 nC) under 100 A/μs di/dt. Its gate threshold voltage (2–4 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers.

The device features a thermally enhanced PowerDI5060-8 (Type K) package with exposed drain pad, achieving R_θJC = 0.9°C/W and supporting 167 W power dissipation at T_C = +25°C. It is fully specified for automotive-grade reliability including PPAP documentation and moisture sensitivity level 1 per J-STD-020.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad on bottom side. Molded green compound (UL 94V-0), matte tin annealed terminals, 0.097 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N6F7, DMTH61M8SPSQ-13 offers 20% lower R_DS(ON) and superior thermal resistance, enabling higher power density in compact engine bay layouts; IXTP36N60P is electrically and mechanically incompatible for automotive low-voltage switching roles.

Availability

DMTH61M8SPSQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48 V mild hybrid DC-DC converters requiring stable component supply, AEC-Q101 compliance, and long-term automotive lifecycle support.

Supply support for DMTH61M8SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and automotive-qualified components since 1964.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for automotive electrification systems demanding AEC-Q101 qualification, high-temperature operation, and production-proven ruggedness in safety-critical power stages.

FAQ

Is DMTH61M8SPSQ-13 suitable for synchronous rectification in 48 V/12 V DC-DC converters?

Yes. With R_DS(ON) = 1.1–1.6 mΩ, Q_gd = 28.1 nC, and t_F = 47.6 ns, it delivers low conduction loss and fast switching essential for high-efficiency synchronous rectification at 200–500 kHz. Its body diode t_RR = 70.4 ns and Q_RR = 127 nC are characterized for controlled reverse recovery in hard- and soft-switching topologies.

What is the maximum allowable PCB copper area for thermal performance at T_C = +100°C?

Per datasheet note 6, thermal resistance R_θJC = 0.9°C/W is measured with the exposed drain pad soldered to a 1-inch square 2 oz copper plane. For T_C = +100°C operation, a minimum 400 mm² (20 mm × 20 mm) copper pour with 2–3 thermal vias (0.3 mm diameter, spaced ≤2 mm) under the drain pad is recommended to maintain safe junction temperatures below +175°C.

Does DMTH61M8SPSQ-13 require gate resistors for automotive EMI compliance?

Yes. A series gate resistor of 3.3–10 Ω is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive harnesses. The device's R_g = 3.0 Ω and low Crss = 184 pF make it responsive to controlled gate drive tuning - typical designs use 4.7 Ω to achieve t_F ≈ 50 ns while meeting CISPR 25 Class 5 radiated emissions limits.

Can DMTH61M8SPSQ-13 replace older TO-263 MOSFETs in existing automotive PCBs?

No direct footprint replacement is possible - PowerDI5060-8 (Type K) has different pad layout, pin count (8-terminal), and thermal pad geometry versus TO-263. However, its superior R_DS(ON) and thermal performance allow redesign into smaller areas: a single DMTH61M8SPSQ-13 replaces two paralleled TO-263 devices in 12 V starter solenoid drivers while improving reliability and reducing bill-of-materials count.