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Diodes Incorporated DMTH62M7SPSW-13
- Part No.:
- DMTH62M7SPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH62M7SPSW-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:8,236
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Product details
Overview
DMTH62M7SPSW from Diodes Incorporated is a 60V, 170A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, optimized for high-current synchronous rectification and DC-DC conversion with 2.7mΩ RDS(ON) @ VGS = 10V and rated for +175°C operation.
For engineers reviewing the DMTH62M7SPSW datasheet, DMTH62M7SPSW pinout, DMTH62M7SPSW application, or DMTH62M7SPSW equivalent, this device is selected for high-efficiency power stages where low conduction loss, robust UIS performance, thermal resilience in compact layouts, and automotive-grade reliability are critical design requirements.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching characteristics: Qg = 68.7nC, tF = 14.86ns, and Ciss = 4973pF at VDS = 30V. Its 100% production-tested UIS capability ensures survivability under inductive load transients.
The PowerDI5060-8/SWP package integrates an exposed drain pad for direct thermal coupling to PCB copper, delivering RθJC = 1°C/W and enabling high-power dissipation (150W @ TC = +25°C) within a <1.1mm profile suitable for space-constrained industrial and automotive power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V nominal bus systems with 25% headroom for transient overvoltage |
| RDS(ON) max | 2.7mΩ @ VGS = 10V - Enables ≤0.44W conduction loss at 100A continuous current |
| ID max | 170A @ TC = +25°C - Delivers high-current capability for primary-side switching in multiphase VRMs |
| TJ range | –55°C to +175°C - Qualified for under-hood automotive and industrial environments without derating |
| EAS | 202mJ - Withstands repetitive inductive energy spikes in synchronous buck output stages |
| Qg | 68.7nC - Balances gate drive power and switching speed for 300–500kHz DC-DC operation |
| RθJC | 1°C/W - Allows direct thermal path to heatsink or copper plane, minimizing junction-to-case temperature rise |
Pinout & Package
PowerDI5060-8/SWP (Type UX) is a surface-mount, thermally enhanced 8-pin package with dual exposed drain pads on bottom side for low-thermal-resistance mounting. Dimensions: 5.15 × 6.40 × 1.00 mm (L × W × H), profile <1.1mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Low-side reference node; tied to PCB ground plane for minimal loop inductance in high-di/dt paths |
| 2 (D) | Drain | High-current power input/output node; connected to exposed pad for thermal and electrical conduction |
| 3 (D) | Drain | Parallel drain connection to reduce current density and improve thermal spreading across package |
| 4 (G) | Gate | Control terminal requiring 10V drive for full enhancement; low Rg = 0.81Ω supports fast edge rates |
| 5 (D) | Drain | Third drain terminal reinforcing current handling and thermal path to soldered pad |
| 6 (D) | Drain | Fourth drain terminal completing symmetrical drain layout for balanced current distribution |
| 7 (S) | Source | Secondary source connection reducing source inductance in paralleled configurations |
| 8 (S) | Source | Third source terminal enhancing low-impedance return path for gate-drive and power loops |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Enables deployment in engine control units and motor drives without external cooling or derating |
| 100% UIS tested in production | Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers in flyback/LLC topologies |
| Thermally efficient PowerDI5060-8/SWP | Exposes >80% of die area via dual drain pads, achieving RθJC = 1°C/W for stable high-power operation |
| Low RDS(ON) (2.7mΩ) | Reduces I²R losses by ≥35% vs. comparable 5x6mm SO-8 MOSFETs, improving system efficiency above 95% |
| <1.1mm package profile | Permits integration into ultra-thin server VRMs and automotive ADAS power supplies with strict Z-height constraints |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck-boost stage operating at 200kHz. Use Value: 2.7mΩ RDS(ON) limits conduction loss to <0.7W at 150A peak, enabling >96.5% efficiency at full load while surviving 175°C under-hood ambient. |
Use Scenario: Inverter output stage for 3kW servo drives with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT gate driver auxiliary supply with fast body diode recovery (tRR = 53.34ns). Use Value: 680A pulsed current rating and 202mJ EAS support safe commutation during short-circuit events without desaturation protection. |
| Server Voltage Regulators | Renewable Energy Inverters |
Use Scenario: Multiphase CPU VRM with 30A+ per phase in AI accelerator cards. IC Role / Device Role / Timing Role: Synchronous rectifier in 300kHz buck phase-leg, driven by integrated gate driver with 3.5Ω external Rg. Use Value: 68.7nC Qg enables clean 10V gate transitions within 15ns rise/fall, minimizing shoot-through risk and dead-time loss. |
Use Scenario: MPPT boost stage in string inverters handling 1000V PV arrays. IC Role / Device Role / Timing Role: Freewheeling switch in high-frequency boost converter operating at 100kHz with 48V output. Use Value: 170A continuous current and –55°C to +175°C rating ensure reliable operation across desert daytime extremes and arctic winter cold starts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTN170N10L2 | 100V VDSS, 1.8mΩ RDS(ON), TO-268 package, RθJC = 0.4°C/W | Higher voltage rating but larger footprint (10.16 × 15.24 mm) and no automotive qualification | Select when 100V blocking is required and board space allows larger package; not drop-in due to pinout and thermal interface differences |
| STL220N6F7 | 60V VDSS, 2.5mΩ RDS(ON), PowerFLAT 5×6 package, RθJC = 1.2°C/W | Slightly lower RDS(ON) but higher thermal resistance and no production UIS testing | Prefer for cost-sensitive non-automotive applications where avalanche stress is absent; requires additional layout margin for thermal management |
Compared with IXTN170N10L2 and STL220N6F7, DMTH62M7SPSW uniquely combines automotive-grade +175°C rating, production-tested UIS, and sub-1.1mm profile in a compact 5.15×6.40mm footprint-making it optimal for space- and reliability-constrained high-power DC-DC and motor control designs.
Availability
DMTH62M7SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial servo drives, and AI server VRMs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.
Supply support for DMTH62M7SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-temperature power conversion in demanding environments-emphasizing low RDS(ON), robust avalanche performance, and thermally optimized packaging.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH62M7SPSW supports 120A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8/SWP package under sustained high-power operation without forced cooling.
Does this MOSFET include integrated gate protection?
No, DMTH62M7SPSW does not integrate gate protection circuitry. It features standard ±20V gate-source voltage rating and relies on external gate resistors and clamping (e.g., TVS) for ESD and overvoltage protection, consistent with discrete power MOSFET design practice.
Is the body diode suitable for synchronous rectification?
Yes-the body diode has VSD = 0.8–1.2V at IS = 20A and tRR = 53.34ns, enabling efficient synchronous rectification in buck and LLC topologies without external Schottky diodes, provided gate timing avoids cross-conduction.
What is the moisture sensitivity level (MSL) for this part?
DMTH62M7SPSW has MSL Level 1 per J-STD-020, meaning it is not moisture-sensitive and may be stored indefinitely at ambient conditions without baking prior to reflow soldering.
DMTH62M7SPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4973 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH62M7SPSW-13 FAQ
1.How can I place an order for DMTH62M7SPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH62M7SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH62M7SPSW-13 reliable?
The price and inventory of DMTH62M7SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH62M7SPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH62M7SPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH62M7SPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH62M7SPSW-13?
DMTH62M7SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH62M7SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH62M7SPSW-13?
For technical support, including DMTH62M7SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH62M7SPSW-13 requirements.
6.How does Aetrix verify that DMTH62M7SPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH62M7SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH62M7SPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH62M7SPSW-13?
All DMTH62M7SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH62M7SPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH62M7SPSW-13 part is unused and in its original packaging.
Return procedure for DMTH62M7SPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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