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Diodes Incorporated DMTH62M7SPSWQ-13
- Part No.:
- DMTH62M7SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH62M7SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:6,421
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Product details
Overview
DMTH62M7SPSWQ from Diodes Incorporated is a 60V, 170A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 2.7mΩ RDS(ON) at VGS = 10V and supports synchronous rectification and high-current DC-DC conversion in automotive power stages.
For engineers reviewing the DMTH62M7SPSWQ datasheet, DMTH62M7SPSWQ pinout, DMTH62M7SPSWQ application, or DMTH62M7SPSWQ equivalent, this page provides verified thermal performance data, AEC-Q101 qualification status, production-tested UIS robustness, and validated package-level thermal resistance (RθJC = 1°C/W) for high-reliability automotive power design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its 100% production-tested UIS capability ensures survivability under inductive load transients common in motor control and battery protection circuits.
The PowerDI5060-8/SWP package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling 150W continuous power dissipation at TC = +25°C. Gate charge parameters (Qg = 68.7nC, Qgd = 14.1nC) support efficient gate drive design in high-frequency synchronous buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands up to 48V DC bus in 48V automotive systems with 25% safety margin. |
| RDS(ON) | 2.7mΩ @ VGS = 10V - Enables ≤0.49W conduction loss at 140A, critical for thermal management in compact ECUs. |
| ID (TC = +25°C) | 170A - Supports high-current power distribution in ADAS domain controllers and electric power steering modules. |
| TJ Range | –55°C to +175°C - Fully operational across full automotive under-hood temperature range per AEC-Q101. |
| EAS | 202mJ - Confirmed avalanche energy rating enables reliable operation during load dump or short-circuit events. |
| RθJC | 1°C/W - Enables direct junction-to-heatsink thermal path via exposed drain pad, reducing thermal impedance by >90% vs. SO-8. |
| Qg | 68.7nC - Determines gate driver current requirement (~6.9A peak for 10ns rise time), guiding selection of compatible drivers. |
Pinout & Package
PowerDI5060-8/SWP (Type UX) is a thermally enhanced surface-mount package with 8 terminals and an exposed drain pad on the bottom side for low-impedance heat transfer. Its 1.0mm profile supports thin ECU designs while maintaining mechanical robustness for automotive vibration requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Drain (D) | Internally paralleled drain connections tied to exposed metal pad - primary current path and thermal conduction path to PCB. |
| 7 | Gate (G) | Single gate input terminal - requires <20V absolute max rating; drives 68.7nC total gate charge. |
| 8 | Source (S) | Source reference node - used for gate drive return and current sensing; multiple source pins reduce parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified + PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and documented reliability testing. |
| 100% production UIS tested | Every unit undergoes unclamped inductive switching stress test (L = 0.2mH, IAS = 45A), ensuring field robustness without derating. |
| RθJC = 1°C/W | Enables 150W continuous power handling at case temperature, eliminating need for external heatsinks in many 48V applications. |
| Low-profile 1.1mm max height | Supports stacking of dual-sided PCB assemblies and integration into space-constrained ADAS camera modules and radar units. |
| Halogen- and antimony-free "Green" construction | Meets EU RoHS 3 (2015/863/EU) and automotive OEM material compliance requirements (<900ppm Br/Cl, <1000ppm Sb). |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) |
|---|---|
|
Use Scenario: High-efficiency 48V-to-12V bidirectional buck-boost converter in vehicle electrical architecture. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectification stage, operating at 200–500kHz. Use Value: 2.7mΩ RDS(ON) reduces conduction loss by >35% versus 4.5mΩ alternatives, improving system efficiency from 92% to 94.5% at 100A. |
Use Scenario: Motor phase switching in 12V or 48V EPS control units requiring high transient current capability. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter bridge, handling pulsed currents up to 680A. Use Value: 202mJ EAS rating and 175°C TJ rating ensure survival during motor stall and battery reversal events without derating. |
| On-Board Charger (OBC) Input Stage | Advanced Driver Assistance Systems (ADAS) |
|
Use Scenario: Input rectification and isolation switching in 6.6kW OBCs for PHEVs/EVs. IC Role / Device Role / Timing Role: Active clamp and synchronous rectifier in totem-pole PFC stage, operating at 100kHz+. Use Value: 68.7nC Qg and 14.1nC Qgd enable clean turn-on/turn-off with minimal shoot-through risk in high-frequency hard-switching topologies. |
Use Scenario: Power distribution and load switching in radar sensor modules and surround-view camera ECUs. IC Role / Device Role / Timing Role: High-side load switch controlling 12V/5V rails for SoC, image sensor, and CAN transceiver subsystems. Use Value: 1.1mm profile allows placement beneath stacked connectors; –55°C to +175°C rating ensures reliability in front-bumper-mounted radar units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(ON) = 2.2mΩ @ 10V, but only rated to +175°C with derated ID = 120A at TC = +100°C; no production UIS test data published. | Lacks documented PPAP support and AEC-Q101 certificate revision history; not recommended for safety-critical EPS or OBC. | Select when lower RDS(ON) is prioritized over guaranteed UIS robustness and full automotive documentation traceability. |
| IXTH170N60L2 | TO-247 package (RθJC = 0.35°C/W), higher RDS(ON) = 4.2mΩ, 600V rating - over-specified voltage, larger footprint, and incompatible thermal interface. | Requires mechanical heatsink mounting; unsuitable for space-constrained automotive modules where PCB copper is sole thermal path. | Choose only if legacy TO-247 board layout must be reused and 600V rating is required for upstream surge protection. |
Compared with STL220N6F7AG and IXTH170N60L2, DMTH62M7SPSWQ uniquely combines AEC-Q101-certified production UIS testing, 1°C/W thermal resistance in a low-profile surface-mount package, and full PPAP documentation-making it the only option qualified for next-generation 48V automotive power stages requiring zero derating at 175°C junction temperature.
Availability
DMTH62M7SPSWQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and on-board chargers requiring stable component supply across extended product lifecycles.
Supply support for DMTH62M7SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, serving automotive, industrial, computing, and consumer markets with ISO/TS 16949-certified facilities and broad logistics infrastructure.
This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12V, 48V, and hybrid vehicle architectures-emphasizing AEC-Q101 compliance, production-level reliability validation, and thermal optimization for PCB-mounted applications.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH62M7SPSWQ supports 120A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8/SWP package and ensures safe operation without exceeding 175°C junction temperature under typical PCB copper area conditions.
Is the gate threshold voltage stable across temperature?
Yes - VGS(TH) ranges from 2.0V to 4.0V at 25°C and shifts predictably to 2.4V–4.4V at 175°C (Figure 8). This monotonic increase prevents unintended turn-on at high temperature and supports robust gate drive design using standard 12V logic-level drivers.
Does the device include integrated body diode functionality?
Yes - it features an intrinsic body diode with VSD = 0.8–1.2V at IS = 20A and TJ = 25°C (Electrical Characteristics table). The diode is rated for 170A continuous forward current and 680A pulsed current, enabling use in synchronous rectification and freewheeling applications without external diodes.
What is the moisture sensitivity level (MSL) and reflow profile compatibility?
The device is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life and can withstand standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking. The matte tin annealed finish ensures solderability per MIL-STD-202, Method 208.
DMTH62M7SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4973 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH62M7SPSWQ-13 FAQ
1.How can I place an order for DMTH62M7SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH62M7SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH62M7SPSWQ-13 reliable?
The price and inventory of DMTH62M7SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH62M7SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH62M7SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH62M7SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH62M7SPSWQ-13?
DMTH62M7SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH62M7SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH62M7SPSWQ-13?
For technical support, including DMTH62M7SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH62M7SPSWQ-13 requirements.
6.How does Aetrix verify that DMTH62M7SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH62M7SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH62M7SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH62M7SPSWQ-13?
All DMTH62M7SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH62M7SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH62M7SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH62M7SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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