Diodes Incorporated DMTH62M8LPS-13

Overview

DMTH62M8LPS-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, featuring 2.8 mΩ R_DS(ON) at V_GS = 10V and rated for continuous operation up to +175°C junction temperature. It delivers high pulsed current capability (400 A IDM), robust 100% UIS-tested ruggedness, and low-profile 1.1 mm height-optimized for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the DMTH62M8LPS-13 datasheet, DMTH62M8LPS-13 pinout, DMTH62M8LPS-13 application, or DMTH62M8LPS-13 equivalent, key selection criteria include its thermally efficient exposed-drain PowerDI5060-8 package, 1.3 °C/W R_θJC, 96.3 nC total gate charge at 10 V, and validated performance across -55°C to +175°C ambient conditions.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining fast switching dynamics: t_D(ON) = 9.9 ns, t_F = 32.9 ns, and Q_gd/Q_gs ratio of ~1.52 supports clean turn-off with reduced Miller-induced shoot-through risk. Its body diode exhibits V_SD = 0.8–1.2 V at 50 A and t_RR = 49.7 ns under 100 A/μs di/dt-critical for synchronous FET replacement in buck converters.

The device is characterized for operation with V_GS from ±20 V, V_GS(TH) = 1.62 V (typ), and operates reliably under repetitive avalanche stress (E_AS = 193 mJ, I_AS = 44 A). Thermal design leverages the exposed drain pad for direct PCB copper thermal coupling, enabling 115 W power dissipation at T_C = 25°C per R_θJC = 1.3 °C/W.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8 terminals: 6 drain, 1 source, 1 gate). Dimensions: 5.15 × 6.15 × 1.10 mm (L × W × H), 0.097 g mass, UL 94V-0 molding compound.

Key Features

Applications

Availability

DMTH62M8LPS-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drive inverters, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for DMTH62M8LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and computing applications where thermal density and reliability are critical.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.

Compared with IXTP110N065T and SUD50N06-45L, DMTH62M8LPS-13 uniquely combines 60 V rating, 2.8 mΩ on-resistance, 1.1 mm profile, and +175°C operation in an SMT package-making it the only option for space-constrained, high-temperature, high-efficiency synchronous rectification without thermal derating.

FAQ

What is the maximum continuous drain current for DMTH62M8LPS-13 at 100°C case temperature?

The datasheet specifies 100 A continuous drain current at both T_C = 25°C and T_C = 100°C (Note 9). This reflects the device's thermal design: the PowerDI5060-8 package maintains current capability up to 100°C case temperature without linear derating, enabled by its low R_θJC of 1.3 °C/W and robust silicon die.

Does DMTH62M8LPS-13 require a gate resistor for stability in high-frequency switching?

Yes-a gate resistor is recommended. With R_G = 0.64 Ω (intrinsic) and Q_g = 96.3 nC, external series resistance (typically 2–5 Ω) controls dV/dt and suppresses oscillation during hard switching. Layout parasitics and driver strength must be considered; the device's low Crss (135.3 pF) reduces Miller feedback susceptibility but does not eliminate need for controlled turn-on/turn-off.

Can DMTH62M8LPS-13 be used in parallel configurations?

Yes, and it is designed for paralleling. Its positive temperature coefficient for R_DS(ON) (Figure 6) ensures current sharing stability across temperature. Key requirements include matched gate drive paths, symmetrical PCB layout with identical trace lengths to each device, and shared thermal plane under all exposed drain pads to maintain uniform junction temperature.

Is the body diode of DMTH62M8LPS-13 suitable for asynchronous rectification?

No-it is not optimized for standalone asynchronous use. While V_SD = 0.8–1.2 V at 50 A and t_RR = 49.7 ns are specified, the device is characterized and qualified for synchronous rectification. Its body diode lacks soft recovery characteristics; using it asynchronously in high-dI/dt circuits may cause voltage overshoot and EMI. Dedicated Schottky or SiC diodes are preferred for asynchronous roles.