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Diodes Incorporated DMTH62M8SPS-13

Part No.:
DMTH62M8SPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH62M8SPS-13.pdf
Description:
MOSFET BVDSS: 41V-60V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,387

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Product details

Overview

DMTH62M8SPS-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, featuring 2.8mΩ RDS(ON) @ VGS = 10V, rated for +175°C operation, and optimized for high-efficiency DC-DC converters and synchronous rectification in automotive and industrial power supplies.

For engineers reviewing the DMTH62M8SPS-13 datasheet, DMTH62M8SPS-13 pinout, DMTH62M8SPS-13 application, or DMTH62M8SPS-13 equivalent, key selection criteria include its low on-resistance at high temperature, 100% production-tested UIS robustness, thermally efficient exposed-drain package, and compatibility with high-current, high-temperature switching topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(ON) = 13.2ns, tF = 12ns, and Qg = 95.4nC at VDD = 30V. Its gate threshold voltage (VGS(TH) = 2–4V) ensures reliable turn-on with standard 3.3V/5V logic drivers.

The device integrates a low-VSD body diode (0.8–1.2V @ IS = 20A) and supports high pulsed currents (IDM = 400A, IASM = 45.5A), enabling use in hard-switched and resonant converter stages where reverse recovery and avalanche energy handling are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Supports 48V nominal bus systems with 20% transient margin.
RDS(ON) max 2.8mΩ @ VGS = 10V - Enables <1.4W conduction loss at 50A, reducing thermal stress.
ID continuous 100A @ TC = +25°C - Rated for high-current output stages without forced air cooling.
TJ max +175°C - Allows operation in under-hood automotive or sealed industrial enclosures.
RθJC 1.2°C/W - Enables direct heatsinking via exposed drain pad for efficient thermal path.
Qg 95.4nC - Determines gate drive power requirement for 300kHz+ switching frequencies.
EAS 207mJ - Withstands single-pulse inductive energy without failure in unclamped conditions.

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.15 × 1.0mm (L×W×H), 0.097g weight, RoHS-compliant matte tin finish.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7 Drain (D) Seven parallel drain terminals tied to exposed copper pad - primary current path and thermal conduction path to PCB heatsink.
8 Gate (G) Single gate input - requires low-inductance routing to minimize ringing during fast switching.
- Source (S) Internally connected to pins 1–7 via substrate; source node accessed through PCB trace routed to gate driver return and power ground.

Key Features

Feature Design Value
100% UIS tested Every unit validated for 45.5A avalanche current and 207mJ energy - eliminates field failures in inductive load switching.
+175°C rated junction Guaranteed parametric performance up to maximum temperature - enables simplified thermal design in high-ambient environments.
Thermally efficient package RθJC = 1.2°C/W with exposed drain pad - reduces junction-to-heatsink delta-T by >50% vs. SO-8 equivalents.
Low-profile profile 1.0mm max height - fits within thin-power supply modules and stacked PCB assemblies.
Green construction Halogen- and antimony-free, RoHS 3 compliant - meets automotive and industrial environmental compliance mandates.

Applications

Automotive DC-DC Converters Industrial Motor Drives

Use Scenario: 12V-to-48V bidirectional buck-boost converter in 48V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200kHz with 50A average current.

Use Value: 2.8mΩ RDS(ON) minimizes conduction loss at elevated under-hood temperatures up to +125°C ambient.

Use Scenario: Half-bridge output stage in servo amplifier driving 3-phase PMSM motors.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled inverter leg, handling 80A peak current pulses.

Use Value: 400A pulsed drain rating and 100% UIS testing ensure reliability during motor stall and regenerative braking events.

Server VRMs Telecom Power Supplies

Use Scenario: Multiphase buck converter delivering 100A+ to AI accelerator GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in phase-leg topology with 300kHz switching frequency.

Use Value: 95.4nC total gate charge enables efficient drive with integrated DrMOS controllers while limiting switching loss.

Use Scenario: Isolated LLC resonant converter secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Self-driven synchronous rectifier replacing Schottky diodes in 48V telecom rectifiers.

Use Value: 0.8–1.2V VSD and fast tRR = 50.5ns reduce forward and reverse recovery losses by >35% vs. discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTN120N60L2 600V rating, 120A, RDS(ON) = 12.5mΩ - higher voltage grade but 4.5× higher on-resistance. Designed for 400V+ industrial inverters; unsuitable for 48V systems due to excessive conduction loss. Select only if 600V blocking capability is required; avoid for 60V-class applications.
STL220N6F7 60V, 220A, RDS(ON) = 1.4mΩ - lower RDS(ON), but PowerFLAT 5x6 package has RθJC = 1.6°C/W and no production UIS test. Higher current capacity but less robust in unclamped inductive switching; requires additional snubbing in hard-switched designs. Prefer for ultra-low-loss 200A+ designs where avalanche ruggedness is managed externally.

Compared with IX TN120N60L2 and STL220N6F7, DMTH62M8SPS-13 delivers optimal balance of low RDS(ON), proven avalanche ruggedness, and thermal efficiency in compact 60V systems - making it the preferred choice for automotive and industrial 48V power conversion where reliability and size are constrained.

Availability

DMTH62M8SPS-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned manufacturing rigor.

Supply support for DMTH62M8SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and computing applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for DMTH62M8SPS-13 at +100°C case temperature?

The datasheet specifies 100A continuous drain current at both TC = +25°C and TC = +100°C (Note 9), confirmed by thermal derating curves showing RDS(ON) remains stable up to +175°C junction temperature. This reflects the device's ability to sustain full-rated current even under elevated thermal conditions when properly heatsunk.

Does DMTH62M8SPS-13 require a gate resistor for stability in hard-switching applications?

Yes - the device's low gate resistance (RG = 0.66Ω) and 95.4nC gate charge make external gate resistance essential to control dV/dt and suppress oscillation. Typical values range from 2.2Ω to 10Ω depending on switching frequency and driver strength; layout must minimize gate loop inductance to prevent shoot-through.

How is the exposed drain pad electrically connected in the PowerDI5060-8 package?

All seven drain terminals (pins 1–7) and the large bottom-side exposed copper pad are internally shorted to form a single low-inductance, high-current drain node. The pad must be soldered to a dedicated PCB copper pour connected to the main power ground plane to ensure both electrical integrity and optimal thermal transfer.

Is DMTH62M8SPS-13 qualified to AEC-Q101 for automotive use?

While not explicitly labeled "AEC-Q101 qualified" in the datasheet, Diodes Incorporated confirms this part is manufactured on an AEC-Q101-qualified process flow and undergoes 100% UIS testing - a key AEC-Q101 requirement. Customers should consult Diodes' official qualification reports for full test data and PPAP documentation.

DMTH62M8SPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4556 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.2W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type K)

DMTH62M8SPS-13 FAQ

1.How can I place an order for DMTH62M8SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH62M8SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH62M8SPS-13 reliable?

The price and inventory of DMTH62M8SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH62M8SPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH62M8SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH62M8SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH62M8SPS-13?

DMTH62M8SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH62M8SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH62M8SPS-13?

For technical support, including DMTH62M8SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH62M8SPS-13 requirements.

6.How does Aetrix verify that DMTH62M8SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH62M8SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH62M8SPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH62M8SPS-13?

All DMTH62M8SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH62M8SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH62M8SPS-13 part is unused and in its original packaging.

Return procedure for DMTH62M8SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH62M8SPS-13 Tags

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