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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH63M6LPSWQ-13

Name: DMTH63M6LPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH63M6LPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH63M6LPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH63M6LPSWQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI506

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Product details

Overview

DMTH63M6LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI® 5060-8/SWP package, delivering 4.1 mΩ R_DS(ON) at V_GS = 10 V and 105 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports high-frequency switching in automotive DC-DC converters.

For engineers reviewing the DMTH63M6LPSWQ-13 datasheet, DMTH63M6LPSWQ-13 pinout, DMTH63M6LPSWQ-13 application, or DMTH63M6LPSWQ-13 equivalent, key selection criteria include its wettable flank for optical inspection, 100% production-tested UIS robustness, low Q_g (44.8 nC), and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-efficiency automotive power stages. Its 1.77°C/W R_θJC enables direct thermal coupling to PCB copper pads, while the 6.2 mΩ R_DS(ON) @ 4.5 V supports 12 V gate drive systems.

The device integrates a fast body diode with t_RR = 43.6 ns and Q_RR = 52.5 nC, enabling synchronous rectification without external Schottky diodes. Its C_iss = 2479 pF and Cr_ss = 69 pF support clean turn-on/turn-off waveforms under 3.3 Ω gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a.
R_DS(ON) @ 10 V	4.1 mΩ max - Enables ≤1.2 W conduction loss at 105 A in TO-263-equivalent thermal performance.
I_D (T_C = 25°C)	105 A - Supports high-current 48 V–12 V bidirectional DC-DC stages without paralleling.
Q_g @ 10 V	44.8 nC - Reduces gate driver power demand and enables <35 ns t_r/t_f with 3.3 Ω R_g.
E_AS	200 mJ - Sustains unclamped inductive switching events in motor control or solenoid drivers.
T_J Range	−55°C to +175°C - Meets under-hood temperature requirements per AEC-Q101 Grade 0.
C_iss	2479 pF - Limits Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

Package: PowerDI® 5060-8/SWP (Type UX), thermally enhanced surface-mount package with exposed drain pad and wettable flank terminals for automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Low-side return path; electrically tied to 4 internal source leads for reduced parasitic inductance.
2	Drain	Main power output node; connected to exposed copper pad for thermal dissipation and current handling.
3	Drain	Parallel drain connection to enhance current sharing and reduce package resistance.
4	Gate	Control input; requires <2.5 V threshold margin for reliable turn-on across temperature and manufacturing spread.
5	Drain	Third drain terminal supporting >100 A continuous operation with minimal thermal gradient.
6	Drain	Fourth drain terminal completing symmetric current distribution across the exposed pad.
7	Source	Second source terminal reducing source inductance in high-di/dt applications like sync rectification.
8	Source	Third source terminal enabling Kelvin-source sensing in precision current monitoring designs.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche energy handling ≥200 mJ without parameter shift-critical for automotive relay/snubberless designs.
Wettable flank terminals	Enables AOI verification of solder fillet height on all 8 pins, eliminating X-ray inspection for IPC Class 3 automotive assembly.
Low Q_g/Q_gd ratio	Q_gd/Q_g = 0.24 ensures stable Miller plateau timing and reduces risk of false turn-on in high dv/dt environments.
AEC-Q101 qualified + PPAP capable	Validated across 1000+ hours HTOL, ESD HBM ≥2 kV, and temperature cycling −55°C to +175°C-meets Tier-1 automotive release requirements.
Halogen- and antimony-free	Meets EU RoHS 3 and JIS C 0950:2020 "Green" standards with Br+Cl <1500 ppm and Sb <1000 ppm.

Applications

Automotive DC-DC Converters

On-Board Charger (OBC) Primary Switch

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with 105 A peak current.

Use Value: 4.1 mΩ R_DS(ON) cuts conduction loss by 38% vs. comparable 60 V MOSFETs, improving system efficiency from 92.1% to 94.7% at 5 kW.

Use Scenario: Primary-side switching in 6.6 kW single-phase OBC AC/DC stage.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch in totem-pole PFC topology with zero-voltage switching.

Use Value: 43.6 ns t_RR and 52.5 nC Q_RR minimize dead-time losses and enable <100 ns ZVS window extension.

Electric Power Steering (EPS) Motor Driver

12 V Battery Backup System

Use Scenario: Half-bridge high-side switch in 3-phase EPS inverter driving 1.5 kW BLDC motor.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to 175°C ambient and repetitive short-circuit events.

Use Value: 200 mJ E_AS rating sustains 100+ unclamped inductive spikes during fault recovery without degradation.

Use Scenario: Load switch protecting infotainment and ADAS modules during cold-crank (4.5 V battery).

IC Role / Device Role / Timing Role: Low-R_DS(ON) pass transistor with integrated reverse polarity protection via body diode.

Use Value: 6.2 mΩ R_DS(ON) @ 4.5 V ensures <50 mV dropout at 8 A, preserving voltage margin for 5 V LDOs downstream.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	60 V, 2.2 mΩ @ 10 V, PowerFLAT 5x6; higher R_DS(ON) tempco (+0.4%/°C vs. +0.25%/°C).	Requires larger gate driver due to 72 nC Q_g; less suitable for 500 kHz+ operation.	Prefer when ultra-low R_DS(ON) dominates over switching speed and thermal stability.
IPB60R065P7	600 V SiC MOSFET, 65 mΩ @ 15 V; not pin-compatible, needs gate driver redesign.	Used in 800 V EV traction inverters-not applicable for 48/12 V automotive domains.	Not a drop-in replacement; only consider for new 600 V+ architectures requiring SiC benefits.

Compared with STL220N6F7AG and IPB60R065P7, DMTH63M6LPSWQ-13 delivers optimal balance of low R_DS(ON), fast switching, and AEC-Q101-compliant reliability in 48 V–12 V power stages-making it the preferred choice for cost-sensitive, thermally constrained automotive modules where gate drive simplicity and production test coverage are critical.

Availability

DMTH63M6LPSWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, on-board chargers, and electric power steering systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH63M6LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature automotive subsystems including power conversion, motor control, and battery management.

FAQ

What is the maximum allowable gate-source voltage for DMTH63M6LPSWQ-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +12 V to +15 V with transient clamping, especially in noisy automotive environments where coupled noise could push V_GS beyond safe limits during switching transitions.

Does DMTH63M6LPSWQ-13 support Kelvin-source configuration?

Yes-the PowerDI5060-8/SWP package provides three dedicated source terminals (pins 1, 7, and 8), enabling separation of power and sense paths. This allows implementation of Kelvin-source current sensing without additional external components, improving accuracy in overcurrent protection circuits used in EPS and OBC applications.

How does the wettable flank feature improve manufacturing yield?

The wettable flank geometry extends solder plating vertically along the side walls of all eight terminals, allowing automated optical inspection (AOI) systems to verify solder fillet height and coplanarity. This eliminates reliance on X-ray for hidden-joint validation, reducing inspection time by ~40% and increasing first-pass yield in IPC Class 3 automotive SMT lines.

Is the body diode suitable for synchronous rectification without external diodes?

Yes-the body diode exhibits t_RR = 43.6 ns and Q_RR = 52.5 nC at I_F = 20 A, enabling efficient synchronous rectification in 200–500 kHz DC-DC topologies. Its soft recovery characteristic minimizes voltage overshoot and EMI, making it viable for use without parallel Schottky diodes in space-constrained automotive modules.

DMTH63M6LPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2479 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 84.7W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH63M6LPSWQ-13 FAQ

1.How can I place an order for DMTH63M6LPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH63M6LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH63M6LPSWQ-13 reliable?

The price and inventory of DMTH63M6LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH63M6LPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH63M6LPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH63M6LPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH63M6LPSWQ-13?

DMTH63M6LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH63M6LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH63M6LPSWQ-13?

For technical support, including DMTH63M6LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH63M6LPSWQ-13 requirements.

6.How does Aetrix verify that DMTH63M6LPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH63M6LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH63M6LPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH63M6LPSWQ-13?

All DMTH63M6LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH63M6LPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH63M6LPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH63M6LPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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