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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH69M8LFVW-13

Name: DMTH69M8LFVW-13
Brand: Diodes Incorporated
SKU: DMTH69M8LFVW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH69M8LFVW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMTH69M8LFVW-13.pdf

Description:: MOSFET N-CH 60V 15.9/45.4A PWRDI

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMTH69M8LFVW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (SWP) package, rated for continuous drain current of 45.4A at TC = +25°C, RDS(ON) of 9.5mΩ @ VGS = 10V, and operation up to +175°C junction temperature. It serves as a high-efficiency power switch in DC-DC converters and automotive-grade power management circuits.

For engineers reviewing the DMTH69M8LFVW-13 datasheet, DMTH69M8LFVW-13 pinout, DMTH69M8LFVW-13 application, or DMTH69M8LFVW-13 equivalent, key selection criteria include its 100% UIS-tested ruggedness, wettable flank for automated optical inspection, AEC-Q101 qualification, thermally efficient PowerDI3333-8 package, and dual gate-drive compatibility (4.5V/10V).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance via controlled Qg (33.5nC @ 10V) and low Crss (41pF). Its thermal design targets high-power density layouts with RθJC = 5.1°C/W and an exposed drain pad for direct PCB heat sinking.

The device integrates a robust body diode with tRR = 18.2ns and QRR = 33.1nC, enabling synchronous rectification in buck converters. Its gate threshold voltage (1–3V) ensures stable turn-on across -55°C to +175°C, validated per AEC-Q101 stress tests including 100% production UIS screening.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; supports 48V system rails with margin.
R_DS(ON)	9.5mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 45.4A, critical for thermal budget in compact converters.
I_D (continuous)	45.4A @ T_C = +25°C - Sustains high-current loads when mounted on thermally enhanced PCBs.
T_J max	+175°C - Allows operation in under-hood automotive or industrial environments without derating.
Q_g	33.5nC @ V_GS = 10V - Determines gate drive power requirement and switching speed in hard-switched topologies.
E_AS	45mJ - Energy-handling capability during unclamped inductive switching; ensures reliability in motor drives and solenoid controls.
t_RR	18.2ns - Fast body diode recovery reduces cross-conduction losses in synchronous rectifiers.

Pinout & Package

Package: PowerDI3333-8 (SWP), Type UX - surface-mount, thermally enhanced plastic package with exposed drain pad and wettable flanks for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common)	All pins 1–8 are internally connected to the drain terminal and exposed copper pad; provides low-inductance, high-current path and primary thermal conduction path to PCB.
Source (pins 1–8 side edge)	Source Terminal	Source connection is routed through dedicated source leads adjacent to drain terminals; enables Kelvin-source sensing in precision current monitoring designs.
Gate (pin 1)	Control Input	Single gate input (pin 1 only); requires ≤±16V drive; low R_g (1.7Ω) minimizes gate ringing in high-dV/dt environments.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive power systems including engine control units and ADAS power stages.
100% UIS tested	Every unit screened for unclamped inductive switching robustness-eliminates field failures in relay/snubberless inductive load switching.
Wettable flank terminals	Side-wall plating enables automated optical inspection (AOI) of solder fillets-critical for zero-defect manufacturing in automotive electronics.
Thermally optimized PowerDI3333-8	R_θJC = 5.1°C/W allows >29W dissipation at case temperature, supporting high-density board layouts without heatsinks.
Halogen- and antimony-free "Green" construction	Meets JESD22-A112 and RoHS 3 (2015/863/EU); Br+Cl <1500ppm, Sb <1000ppm-ensures compliance in global automotive supply chains.

Applications

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: High-side switching of 12V/24V lighting and actuator loads in BCMs with ambient temperatures up to +125°C.

IC Role / Device Role / Timing Role: N-channel high-side power switch controlled via gate driver IC; handles pulsed currents up to 180A (IDM).

Use Value: 175°C rating avoids thermal shutdown; 100% UIS testing prevents failure during load dump transients.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC modules operating at 300kHz.

IC Role / Device Role / Timing Role: Low-RDS(ON) secondary-side switch replacing Schottky diodes; driven by transformer-coupled gate signal.

Use Value: 9.5mΩ RDS(ON) cuts conduction loss by >40% vs. 40V Schottky; tRR = 18.2ns enables clean commutation.

LCD Backlight LED Driver

Server VRM High-Side Switch

Use Scenario: PWM-controlled current sink for multi-string white LED backlighting in automotive infotainment displays.

IC Role / Device Role / Timing Role: Constant-current switch modulating LED strings at 1–20kHz; operates with 4.5V gate drive from microcontroller.

Use Value: RDS(ON) = 13.3mΩ @ 4.5V ensures stable current regulation; wettable flanks guarantee AOI-passed solder joints on dense flex-rigid PCBs.

Use Scenario: High-side FET in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2V) at >100A per phase.

IC Role / Device Role / Timing Role: Fast-switching power stage with Qg = 33.5nC and Crss = 41pF; paired with dedicated gate driver for <10ns rise/fall times.

Use Value: Low Crss minimizes Miller-induced shoot-through; RθJC = 5.1°C/W enables direct thermal coupling to VRM heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH69M8LFVWQ-13	Identical die and package, but fully AEC-Q101 certified with extended test reporting and traceability; same RDS(ON), Qg, and thermal specs.	Required for automotive production programs needing full PPAP documentation and lot-level qualification data.	Select when automotive OEM compliance mandates full AEC-Q101 certification-not just qualification-and full traceability is contractually required.
IPB180N04S4-02	40V rating, lower RDS(ON) (1.8mΩ), higher Qg (64nC), TO-263 package; not AEC-Q101 qualified.	Suitable for non-automotive 12V/24V industrial supplies where voltage margin is less critical and thermal mass is available.	Choose only if system voltage stays ≤32V and board layout accommodates larger TO-263 footprint; avoid in automotive or 48V systems.

Compared with DMTH69M8LFVWQ-13, the base part lacks full AEC-Q101 production documentation but shares identical electrical and thermal behavior; versus IPB180N04S4-02, it trades lower on-resistance for higher voltage rating, smaller footprint, and automotive qualification-making it optimal for space-constrained 48V automotive power stages.

Availability

DMTH69M8LFVW-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and LCD backlight LED drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability.

Supply support for DMTH69M8LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Power MOSFET product line, engineered specifically for high-reliability automotive and industrial power conversion-emphasizing ruggedness, thermal efficiency, and process consistency under extreme ambient conditions.

FAQ

What is the maximum continuous drain current for DMTH69M8LFVW-13 at 100°C case temperature?

The maximum continuous drain current is 32.1A at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased RDS(ON) at elevated temperatures, and assumes proper PCB copper area and thermal vias per the FR-4 mounting condition described in Note 5.

Does DMTH69M8LFVW-13 support 4.5V logic-level gate drive?

Yes-it delivers RDS(ON) = 13.3mΩ at VGS = 4.5V and ID = 11.5A, making it compatible with standard 5V microcontrollers and gate drivers. The gate threshold voltage range (1–3V) ensures reliable turn-on even with marginal gate drive margins, and the low Qg (15.6nC at 4.5V) minimizes drive power requirements.

How does the PowerDI3333-8 (SWP) package improve thermal performance over standard SO-8?

The PowerDI3333-8 features an exposed drain pad that directly contacts the PCB's thermal plane, achieving RθJC = 5.1°C/W-over 5× better than typical SO-8 packages (~28°C/W). Its 3.3mm × 3.3mm footprint and wettable flanks also enable higher power density and automated solder-joint inspection, critical for automotive production.

Is DMTH69M8LFVW-13 suitable for synchronous rectification in a 300kHz flyback converter?

Yes-the device's 18.2ns body diode reverse recovery time (tRR) and 33.1nC QRR minimize switching losses during dead-time commutation, and its 9.5mΩ RDS(ON) at 10V gate drive reduces conduction loss. Combined with low Crss (41pF), it supports clean, low-noise synchronous rectification at frequencies up to 500kHz in properly laid-out layouts.

DMTH69M8LFVW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 15.9A (Ta), 45.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.5 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1925 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 29.4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMTH69M8LFVW-13 FAQ

1.How can I place an order for DMTH69M8LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH69M8LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH69M8LFVW-13 reliable?

The price and inventory of DMTH69M8LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH69M8LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMTH69M8LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH69M8LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH69M8LFVW-13?

DMTH69M8LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH69M8LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH69M8LFVW-13?

For technical support, including DMTH69M8LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH69M8LFVW-13 requirements.

6.How does Aetrix verify that DMTH69M8LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH69M8LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH69M8LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMTH69M8LFVW-13?

All DMTH69M8LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH69M8LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH69M8LFVW-13 part is unused and in its original packaging.

Return procedure for DMTH69M8LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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