Diodes Incorporated DMTH69M8LFVW-7

Overview

DMTH69M8LFVW-7 from Diodes Incorporated is a 60V, N-channel enhancement-mode power MOSFET in PowerDI3333-8 (SWP) package, rated for continuous drain current up to 45.4A at TC = +25°C, with RDS(ON) of 9.5mΩ @ VGS = 10V and 13.3mΩ @ VGS = 4.5V, operating from −55°C to +175°C - deployed in automotive-grade DC-DC converters requiring high thermal robustness and low conduction loss.

For engineers reviewing the DMTH69M8LFVW-7 datasheet, DMTH69M8LFVW-7 pinout, DMTH69M8LFVW-7 application, or DMTH69M8LFVW-7 equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank terminals for automated optical inspection, 100% UIS-tested ruggedness, and thermally optimized PowerDI3333-8 package enabling high-density power stage layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and fast switching, with gate charge parameters (Qg = 33.5nC @ 10V, Qgd = 5.3nC) supporting efficient synchronous buck operation at multi-MHz frequencies. Its body diode exhibits tRR = 18.2ns and QRR = 33.1nC under IF = 13.5A, di/dt = 400A/μs conditions.

The device's thermal design centers on an exposed drain pad with RθJC = 5.1°C/W and RθJA = 41.7°C/W on FR-4 (2oz Cu), enabling 29.4W dissipation at TC = +25°C. Junction temperature derating follows a linear 0.012Ω/°C rise in RDS(ON) above 25°C, validated across −55°C to +175°C.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), Type UX - surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 1–4 and 6–8 are source; pin 5 is gate; drain connected to underside pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH69M8LFVW-7, the DMTH69M8LFVWQ-7 adds automotive traceability without electrical trade-offs, while the IPB070N15N5-1 sacrifices compactness and inspection compatibility for extended voltage headroom - making the original optimal for space- and reliability-critical 60V power stages.

Availability

DMTH69M8LFVW-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply, AEC-Q101 compliance, and high-temperature operational continuity.

Supply support for DMTH69M8LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-power-density, thermally demanding applications in automotive and industrial power conversion where reliability at extreme temperatures is non-negotiable.

FAQ

What is the maximum continuous drain current for DMTH69M8LFVW-7 at 100°C case temperature?

The maximum continuous drain current is 32.1A at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased RDS(ON) at elevated temperatures, and assumes proper PCB copper layout per the datasheet's 2oz FR-4 thermal bias condition.

Does DMTH69M8LFVW-7 support 4.5V gate drive in logic-level applications?

Yes - it delivers 38.4A ID max at VGS = 4.5V with RDS(ON) = 13.3mΩ, enabling direct drive from 3.3V/5V microcontrollers or gate drivers without level-shifting. The gate threshold voltage (VGS(TH)) ranges from 1V to 3V, ensuring reliable turn-on even with marginal gate drive margins.

How does the wettable flank feature improve manufacturing yield?

The wettable flank design exposes vertical sidewalls of each lead that fully solder during reflow, allowing automated optical inspection (AOI) systems to verify solder fillet height and wetting quality - reducing escape of insufficient-solder or head-in-pillow defects in high-volume SMT lines.

Is there a recommended PCB pad layout for PowerDI3333-8 (SWP)?

Yes - Diodes specifies a 0.650mm × 0.420mm central pad for the exposed drain, with side pads sized 0.420mm × 0.230mm and outer dimensions matching the 3.30mm × 3.30mm outline. Full dimensions and stencil recommendations are published in Package Outline Document PO-0057 (Rev. D) on diodes.com/package-outlines.