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Diodes Incorporated DMTH8001STLW-13

Part No.:
DMTH8001STLW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Datasheet:
AetrixDMTH8001STLW-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,751

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Product details

Overview

DMTH8001STLW from Diodes Incorporated is an 80V, 175°C-rated N-channel enhancement-mode power MOSFET in POWERDI1012-8 (TOLL) package, delivering 1.7 mΩ RDS(ON) at VGS = 10 V and 270 A continuous drain current at TC = +25°C. It is engineered for high-efficiency load switching and battery power management in notebooks and industrial DC-DC converters.

For engineers reviewing the DMTH8001STLW datasheet, DMTH8001STLW pinout, DMTH8001STLW application, or DMTH8001STLW equivalent, key selection criteria include its 0.6°C/W junction-to-case thermal resistance, 100% production-tested UIS robustness, wettable flank terminals for automated optical inspection, and automotive-grade variant availability (DMTH8001STLWQ).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for ultra-low conduction loss while preserving fast switching performance-evidenced by 138 nC total gate charge and 24 ns turn-on delay. Its 1.7 mΩ RDS(ON) enables high-current, low-voltage-drop operation in synchronous rectification and high-side load switch topologies.

The device features a thermally enhanced exposed-drain PowerDI1012-8 package with 0.6°C/W RθJC, rated for continuous operation up to +175°C junction temperature and validated for unclamped inductive switching (EAS = 1104 mJ, IAS = 47 A), supporting rugged motor control and power supply designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS80 V - Supports 48 V and 60 V bus systems with margin against transients
RDS(ON)1.7 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 250 A, critical for high-current load switches
ID (continuous)270 A @ TC = +25°C - Requires direct heatsinking via exposed drain pad for full rating
RθJC0.6 °C/W - Allows precise thermal modeling when mounted to copper plane or heatsink
EAS1104 mJ - Confirmed avalanche energy handling for inductive load interruption without failure
QG138 nC - Determines gate driver power requirement and switching loss trade-off in hard-switched converters
tRR94 ns - Limits reverse recovery losses in synchronous buck and half-bridge configurations

Pinout & Package

Package: POWERDI1012-8 (TOLL), thermally enhanced surface-mount package with exposed drain pad and wettable flank leads for solder joint inspection.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path output terminalConnected to exposed metal pad-must be soldered to large PCB copper area for thermal and electrical performance
Source (S)Return path for channel current8 parallel source pins provide low-inductance return and reduce parasitic loop area
Gate (G)Control input for channel conductionSingle gate pin with 2.6 Ω internal gate resistance-compatible with standard 12 V logic-level drivers

Key Features

FeatureDesign Value
+175°C operating temperature ratingEnables deployment in under-hood automotive modules and high-ambient industrial enclosures without derating
100% production UIS testingGuarantees avalanche ruggedness per JEDEC JESD24-11, eliminating field failures from inductive kickback
Wettable flank terminalsSupports automated optical inspection (AOI) of solder fillets on all side pins-critical for high-reliability manufacturing
Lead-free, halogen- and antimony-freeMeets RoHS 3 (2015/863/EU) and automotive green standards without compromising thermal or electrical performance

Applications

Notebook Battery Protection CircuitIndustrial DC-DC Converter Secondary Side

Use Scenario: High-current battery disconnect during overcurrent or short-circuit events in ultrabook platforms.

IC Role / Device Role / Timing Role: Primary high-side load switch controlling main battery path with fast fault response.

Use Value: 1.7 mΩ RDS(ON) limits voltage drop to <0.5 V at 250 A, preserving system runtime and enabling compact thermal design.

Use Scenario: Synchronous rectification in 12 V → 1.2 V, 200 A point-of-load converter for server CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET driven by controller PWM signal.

Use Value: 94 ns reverse recovery time and 2273 pF Coss minimize shoot-through risk and switching loss in high-frequency operation.

Automotive Body Control Module Load SwitchMotor Drive Half-Bridge High-Side Switch

Use Scenario: Power distribution to lighting, HVAC actuators, and infotainment peripherals in BCMs.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated diagnostics and thermal shutdown.

Use Value: 1104 mJ EAS withstands inductive flyback from solenoid loads without external snubbers.

Use Scenario: High-side switch in 24 V brushed DC motor drive for industrial automation.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology driving bidirectional motor current.

Use Value: 0.6°C/W RθJC allows sustained 150 A operation with passive heatsinking-reducing need for active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-RDS(ON) N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB017N08N5ATMA1 (Infineon)RDS(ON) = 1.7 mΩ @ 10 V, but 80 V rating and TO-leadless PG-HSOF-8 package differs in thermal interfaceRequires different PCB layout due to non-wettable flank leads and no exposed drain padPrefer when existing design uses Infineon's HSOF-8 footprint and requires identical RDS(ON) with lower QG (110 nC)
SIHL8001PCT (Vishay)RDS(ON) = 1.8 mΩ @ 10 V, same 80 V rating, but TOLL package lacks production UIS test documentationNot qualified for automotive or mission-critical inductive switching without additional validationAcceptable for cost-sensitive industrial DC-DC where avalanche stress is absent or externally clamped

Compared with IPB017N08N5ATMA1 and SIHL8001PCT, DMTH8001STLW provides verified UIS robustness, wettable flank AOI capability, and tighter RDS(ON) distribution-making it preferred for high-reliability notebook battery switches and automotive body electronics.

Availability

DMTH8001STLW is available at Aetrix Electronics and suitable for notebook battery protection circuits, industrial DC-DC converters, and automotive body control module load switching requiring stable component supply and long-term manufacturability.

Supply support for DMTH8001STLW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMTH8001STLW belongs to Diodes' TrenchMOS™ high-current power MOSFET product line, designed specifically for high-efficiency, high-temperature load switching and synchronous rectification in space-constrained, thermally demanding applications.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH8001STLW supports 190 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the package and must be validated with actual board-level thermal design using the 0.6°C/W RθJC value and measured TC.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The DMTH8001STLW has a gate threshold voltage range of 2–4 V and is fully enhanced at VGS = 0 V. Turn-off is achieved by pulling the gate to 0 V; a negative gate voltage is not required or recommended, as VGS rating is only ±20 V and negative bias adds unnecessary complexity without benefit.

Can the POWERDI1012-8 package be hand-soldered?

Hand-soldering is not recommended. The exposed drain pad requires uniform, high-thermal-mass reflow profiling (peak ~260°C) to ensure void-free solder joints and thermal performance. Manual soldering risks cold joints, pad lifting, and insufficient thermal conduction-compromising both electrical and thermal reliability.

Is the DMTH8001STLW suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of RDS(ON) (confirmed in Fig. 7 of DS43142 Rev. 7-2) ensures inherent current sharing across paralleled units. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to prevent oscillation and uneven dynamic current distribution.

DMTH8001STLW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
270A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8894 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
6W (Ta), 250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI1012-8

DMTH8001STLW-13 FAQ

1.How can I place an order for DMTH8001STLW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8001STLW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8001STLW-13 reliable?

The price and inventory of DMTH8001STLW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8001STLW-13 is usually 5 days.

3.What payment methods are accepted for DMTH8001STLW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8001STLW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8001STLW-13?

DMTH8001STLW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8001STLW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8001STLW-13?

For technical support, including DMTH8001STLW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8001STLW-13 requirements.

6.How does Aetrix verify that DMTH8001STLW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8001STLW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8001STLW-13 meets industry standards.

7.What is the process for return or replacement of DMTH8001STLW-13?

All DMTH8001STLW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8001STLW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8001STLW-13 part is unused and in its original packaging.

Return procedure for DMTH8001STLW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH8001STLW-13 Tags

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