Diodes Incorporated DMTH8003SPS-13

Overview

DMTH8003SPS from Diodes Incorporated is an 80V, 120A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 3.9 mΩ @ V_GS = 10 V and 100% production-tested unclamped inductive switching - optimized for high-efficiency DC-DC converters and synchronous rectification in automotive and industrial power supplies.

For engineers reviewing the DMTH8003SPS datasheet, DMTH8003SPS pinout, DMTH8003SPS application, or DMTH8003SPS equivalent, key selection criteria include its low R_DS(ON) at elevated temperature, robust avalanche energy rating (E_AS = 375.4 mJ), thermal resistance R_θJC = 1.2 °C/W, and compatibility with 6 V gate drive in space-constrained high-power topologies.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance: t_D(ON) = 12.6 ns, Q_g = 124.3 nC, and C_iss = 8952 pF at V_DS = 40 V. Its body diode exhibits t_RR = 56.2 ns and Q_RR = 118.7 nC under IF = 50 A / di/dt = 100 A/μs conditions.

The device is characterized for operation across –55°C to +175°C, with R_DS(ON) normalized to ≤2.6× at T_J = 175°C (V_GS = 10 V, I_D = 30 A), and features a thermally efficient exposed-drain PowerDI5060-8 package enabling direct PCB copper thermal biasing per JESD51-2.

Key Specifications

Pinout & Package

PowerDI5060-8 (Type K) is a thermally enhanced surface-mount package with an exposed drain paddle soldered directly to PCB copper for low R_θJC. It features 8 terminals in a compact 5.15 mm × 6.15 mm footprint with 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP80N10P and STL220N6F7, DMTH8003SPS uniquely balances 80 V rating, 120 A current capacity, 3.9 mΩ on-resistance, and +175°C operation in a surface-mount package - making it optimal for space- and thermal-constrained 48 V power conversion where reliability under transient stress is critical.

Availability

DMTH8003SPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for DMTH8003SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and avalanche robustness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for DMTH8003SPS?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 10 V drive, a 12 V gate supply with 100 kΩ pull-down resistor and 2.5 Ω series gate resistor is recommended to suppress ringing and ensure safe dv/dt margins.

Can DMTH8003SPS be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (normalized increase to 2.6× at 175°C) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1 Ω gate resistors to prevent oscillation between devices.

Is DMTH8003SPS qualified to AEC-Q101?

No - the datasheet states that automotive-qualified versions require specific change control and PPAP capability; this part is marked "ADVANCED INFORMATION" and not listed in Diodes' AEC-Q101 qualified product list. For automotive use, contact Diodes' automotive team for AEC-Q101-compliant variants such as DMTH8003SPSQ.

What is the recommended PCB pad layout for thermal performance?

Per Diodes' package outline, a minimum 1″² (25.4 mm × 25.4 mm) 2 oz copper area connected to the exposed drain paddle via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch) is required to achieve the 125 W P_D rating. The pad must extend beyond the D1/E1 outline (4.90 mm × 5.80 mm) by ≥0.5 mm on all sides.