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Diodes Incorporated DMTH8003STLW-13
- Part No.:
- DMTH8003STLW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSFN
- Datasheet:
-
DMTH8003STLW-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI10
- Quantity:
- Payment:
- Shipping:
Inventory:3,710
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Product details
Overview
DMTH8003STLW from Diodes Incorporated is an 80V, 175°C-rated N-channel enhancement-mode power MOSFET in POWERDI®1012-8 package, with RDS(ON) = 1.32 mΩ (typ) at VGS = 10 V and ID = 30 A. It delivers 173 A continuous drain current at TC = +25°C and supports high-efficiency load switching in automotive and industrial power management systems.
For engineers reviewing the DMTH8003STLW datasheet, DMTH8003STLW pinout, DMTH8003STLW application, or DMTH8003STLW equivalent, key selection criteria include its 1.32 mΩ on-resistance, 175°C junction rating, wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and suitability for high-current DC-DC converters and motor control H-bridge legs.
Technical Context
This MOSFET uses a trench-gate silicon process optimized for low conduction loss while maintaining fast switching performance: tD(ON) = 33 ns, tR = 45 ns, Qg = 124 nC, and Ciss = 8191 pF at VDS = 40 V. Its body diode exhibits tRR = 99 ns and QRR = 243 nC under 25 A/100 A/μs conditions.
The device features a thermally enhanced exposed-drain PowerDI1012-8 package with RθJC = 1 °C/W and rated for operation from –55°C to +175°C. It passes 100% production UIS testing at L = 0.3 mH, supporting reliable operation in inductive load switching applications without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 80 V drain-source blocking voltage, suitable for 48 V automotive and industrial bus systems. |
| RDS(ON) | 1.32 mΩ (typ) @ VGS = 10 V, ID = 30 A - Minimizes conduction loss in high-current load switches and synchronous rectifiers. |
| ID (continuous) | 173 A @ TC = +25°C - Enables high-power density designs without forced air cooling when mounted on adequate heatsink. |
| TJ max | +175°C - Supports operation in under-hood automotive environments and sealed industrial enclosures without derating. |
| Qg | 124 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers in high-frequency PWM circuits. |
| EAS | 800 mJ - Specifies single-pulse avalanche energy handling capability, enabling robustness against inductive turn-off transients. |
| RθJC | 1 °C/W - Confirms efficient thermal path from junction to case, critical for thermal design of high-current PCB-mounted MOSFETs. |
Pinout & Package
Package: POWERDI®1012-8 - Thermally enhanced surface-mount package with exposed drain pad, wettable flank leads for solder joint inspection, and 0.388 g mass. UL 94V-0 molded compound, MSL Level 1, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path output terminal | Connected to exposed copper pad - primary thermal and electrical path for high-current conduction and heat dissipation. |
| Pins 2–5 (Source) | Power return path | Four parallel source terminals reduce loop inductance and improve current sharing in high-di/dt applications. |
| Pins 6–8 (Gate) | Control input | Three gate terminals minimize gate loop inductance and enhance switching stability in high-frequency power stages. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS production test | Guarantees avalanche ruggedness per L = 0.3 mH, eliminating need for post-production qualification screening in safety-critical loads. |
| Wettable flank leads | Enables automated optical inspection (AOI) of solder fillets on all side terminals, improving manufacturing yield and field reliability. |
| +175°C operating rating | Supports full-spec operation in engine bay, powertrain, and industrial motor drive environments without thermal derating. |
| Low Qgd/Qg ratio | Qgd = 32 nC / Qg = 124 nC → 25.8% - Reduces Miller effect, enabling stable hard-switching up to 200 kHz with minimal gate oscillation. |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with automotive and industrial environmental compliance mandates without performance trade-offs. |
Applications
| Automotive Body Control Module (BCM) | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-side load switch for headlight, HVAC blower, and seat heater control in 12 V/48 V dual-bus vehicles. IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump support; operates as main power path controller during active load cycles. Use Value: 1.32 mΩ RDS(ON) limits power loss to <0.5 W at 20 A, reducing thermal stress and enabling compact PCB layout without heatsinks. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET driven by gate driver IC; conducts during secondary-side freewheeling interval. Use Value: 800 mJ EAS and 99 ns tRR suppress voltage spikes during zero-voltage switching transitions, improving efficiency and EMI margin. |
| Electric Power Steering (EPS) Motor Driver | Industrial Motor Starter Module |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless DC motor in EPS system. IC Role / Device Role / Timing Role: High-current phase-leg switch; handles bidirectional current with body diode conduction during PWM dead-time. Use Value: 175°C rating ensures uninterrupted operation during sustained torque demand at elevated ambient temperatures (>125°C). |
Use Scenario: Solid-state replacement for contactor in 3 kW industrial pump starter with soft-start and overload protection. IC Role / Device Role / Timing Role: Main power switch controlling motor connection to 400 V AC/DC bus; triggered via optocoupled gate driver. Use Value: 692 A pulsed drain current (IDM) supports 6× inrush current during motor startup without SOA violation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTN170N10L2 | 100 V VDSS, 1.7 mΩ RDS(ON), TO-268 package, RθJC = 0.45 °C/W | Higher voltage margin but larger footprint and higher gate charge (160 nC); requires larger heatsink due to non-exposed-drain package. | Preferred where 100 V rating and lower thermal resistance outweigh PCB area constraints and gate drive complexity. |
| IPB180N08S4-03 | 80 V VDSS, 3.0 mΩ RDS(ON), TO-263-7 package, RθJC = 0.7 °C/W | Higher on-resistance and lower current rating (140 A), no wettable flanks, not AEC-Q101 qualified. | Acceptable for cost-sensitive industrial applications where 175°C operation and AOI capability are not required. |
Compared with IXTN170N10L2 and IPB180N08S4-03, DMTH8003STLW offers the lowest RDS(ON) in a compact wettable-flank package with guaranteed 175°C operation and production UIS testing-making it optimal for space-constrained, thermally aggressive automotive and industrial switching nodes.
Availability
DMTH8003STLW is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMTH8003STLW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This device belongs to Diodes' Power MOSFET product line, engineered for high-current, high-temperature switching in next-generation electrified systems-emphasizing low RDS(ON), robust avalanche performance, and automotive-grade manufacturability.
FAQ
What is the maximum allowable gate-source voltage for DMTH8003STLW?
The absolute maximum VGS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, use VGS = 10 V for full enhancement (RDS(ON) = 1.32 mΩ typ) or VGS ≥ 4.2 V to ensure turn-on across –55°C to +175°C, per Figure 8's VGS(TH) vs. TJ curve.
Does DMTH8003STLW have AEC-Q101 qualification?
Yes-DMTH8003STLW is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. The datasheet explicitly states suitability for automotive applications requiring PPAP capability and change control, and its 175°C rating aligns with AEC-Q101 stress test requirements for high-temperature operation.
How does the wettable flank feature impact PCB assembly?
The wettable flank design enables side-view AOI of solder fillets on all eight terminals, verifying coplanarity and solder joint integrity without X-ray. This reduces escape defects in high-volume automotive PCB assembly and eliminates manual visual inspection for IPC Class 3 compliance.
Can DMTH8003STLW be used in paralleled configurations?
Yes-its positive temperature coefficient of RDS(ON) (Figure 7) ensures inherent current sharing. With matched gate drive routing and symmetric PCB layout, two or more units can be paralleled to achieve >300 A continuous current while maintaining thermal stability and SOA compliance per Figure 12.
DMTH8003STLW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 124 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8191 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.6W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI1012-8
DMTH8003STLW-13 FAQ
1.How can I place an order for DMTH8003STLW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8003STLW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8003STLW-13 reliable?
The price and inventory of DMTH8003STLW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8003STLW-13 is usually 5 days.
3.What payment methods are accepted for DMTH8003STLW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8003STLW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8003STLW-13?
DMTH8003STLW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8003STLW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8003STLW-13?
For technical support, including DMTH8003STLW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8003STLW-13 requirements.
6.How does Aetrix verify that DMTH8003STLW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH8003STLW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8003STLW-13 meets industry standards.
7.What is the process for return or replacement of DMTH8003STLW-13?
All DMTH8003STLW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8003STLW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8003STLW-13 part is unused and in its original packaging.
Return procedure for DMTH8003STLW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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