Diodes Incorporated DMTH8003STLWQ-13

Overview

DMTH8003STLWQ from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in POWERDI®1012-8 package, delivering 2.5 mΩ R_DS(ON) at V_GS = 10 V, 173 A continuous drain current at T_C = +25°C, and operation up to +175°C junction temperature-designed for high-reliability automotive motor controls and DC-DC converters.

For engineers reviewing the DMTH8003STLWQ datasheet, DMTH8003STLWQ pinout, DMTH8003STLWQ application, or DMTH8003STLWQ equivalent, this page provides verified electrical parameters, thermal performance data, wettable flank package details, AEC-Q101 qualification status, and automotive-grade supply chain support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and robust avalanche capability (E_AS = 800 mJ, I_AS = 73 A), with gate threshold voltage V_GS(TH) tightly specified between 2 V and 4 V at 250 µA. Its dynamic characteristics include Q_g = 124 nC and C_iss = 8191 pF at V_DS = 40 V, supporting efficient high-frequency switching in synchronous rectification stages.

The device integrates a body diode with t_RR = 99 ns and Q_RR = 243 nC under 25 A/100 A/µs conditions, enabling reliable freewheeling in hard-switched topologies. Thermal design is anchored by R_θJC = 1 °C/W and R_θJA = 27 °C/W on FR-4, with full characterization across -55°C to +175°C operating range.

Key Specifications

Pinout & Package

Package: POWERDI®1012-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad, wettable flank side walls for automated optical inspection, and 0.388 g mass. Molded in UL 94V-0 green compound, RoHS-compliant matte tin finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80V automotive MOSFET applications.

Compared with IPB80N04S4-02 and STL220N4LF8AG, DMTH8003STLWQ uniquely combines AEC-Q101 certification, wettable flank leads, 1 °C/W R_θJC, and production-level UIS testing-making it the only option fully aligned with Tier-1 automotive power module requirements.

Availability

DMTH8003STLWQ is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and onboard charger input stages requiring stable component supply under IATF 16949-compliant logistics.

Supply support for DMTH8003STLWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-current, high-temperature traction and auxiliary power systems in electrified vehicles-emphasizing ruggedness, thermal performance, and qualification compliance.

FAQ

What is the maximum allowable gate-source voltage for DMTH8003STLWQ?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent oxide damage. For reliable switching, gate drive should be clamped to +12 V to +15 V with fast fall time to avoid Miller-induced false turn-on during high-di/dt events.

Does DMTH8003STLWQ require a gate resistor for automotive applications?

Yes-a gate resistor between 2.2 Ω and 10 Ω is recommended to dampen ringing and control dV/dt during switching. The 1.1 Ω internal gate resistance supports fast turn-on but must be externally tuned to match drive strength and layout parasitics in motor control inverters.

How is the exposed drain pad electrically connected in POWERDI1012-8?

The exposed drain pad is the primary drain terminal and must be soldered to a large PCB copper area serving as both current path and thermal sink. It is not internally connected to any pin; all eight pins are source or gate only-no drain connections exist outside the pad.

Is DMTH8003STLWQ suitable for synchronous rectification in isolated DC-DC converters?

Yes-its 2.5 mΩ R_DS(ON), 99 ns body diode t_RR, and 243 nC Q_RR make it well-suited for secondary-side synchronous rectification in 48 V–60 V output converters operating up to 300 kHz, provided gate timing avoids shoot-through and layout minimizes common-source inductance.