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Diodes Incorporated DMTH8004LPS-13
- Part No.:
- DMTH8004LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH8004LPS-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:3,179
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Product details
Overview
DMTH8004LPS from Diodes Incorporated is an 80V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency power management and load switching. It delivers 3.8mΩ RDS(ON) at VGS = 10V, supports 175°C operation, and passes 100% production UIS testing-enabling robust use in automotive DC-DC converters and industrial hot-swap circuits.
For engineers reviewing the DMTH8004LPS datasheet, DMTH8004LPS pinout, DMTH8004LPS application, or DMTH8004LPS equivalent, key selection criteria include its 1.2°C/W RθJC, 81nC total gate charge at 10V, 175°C maximum junction temperature, and PowerDI5060-8 thermal pad layout compatibility with high-current PCB designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining fast switching performance: tD(ON) = 8.5ns, tF = 27.7ns, and QGD/QG ratio of ~27% ensures controllable turn-off dv/dt. Its body diode exhibits tRR = 53ns and QRR = 91nC under 20A/100A/μs conditions, supporting synchronous rectification in buck converters.
The device is characterized across -55°C to +175°C, with RDS(ON) normalized to 2.4× at 175°C (VGS = 10V), and VGS(TH) stable between 1.3V–2.8V. Thermal design leverages the exposed drain pad: RθJC = 1.2°C/W enables >125W continuous dissipation at TC = 25°C when mounted to a heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Supports 48V nominal bus systems with 67% derating margin for transient overvoltage. |
| RDS(ON) | 3.8mΩ @ VGS = 10V - Enables ≤0.38W conduction loss at 100A, critical for high-current load switches. |
| ID | 100A @ TC = 25°C - Package-limited continuous current rating tied to PowerDI5060-8 copper thermal mass. |
| QG | 81nC @ VGS = 10V - Determines gate driver power requirement: ~810μJ per switch cycle at 10V drive. |
| RθJC | 1.2°C/W - Defines minimum heatsink thermal resistance needed to maintain TJ ≤ 175°C at full load. |
| EAS | 183.7mJ - Quantifies single-pulse avalanche energy handling capability for inductive load interruption. |
| TJ Range | -55°C to +175°C - Validated operation in under-hood automotive and industrial motor control environments. |
Pinout & Package
Package: PowerDI5060-8 surface-mount package with exposed drain thermal pad (8-terminal configuration). Molded green compound, UL 94V-0 rated, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≥10V drive for full enhancement; 2.1Ω gate resistance limits ringing. |
| 2,3,4,5,7,8 (D) | Drain | High-side power path connection; all six pins tied to exposed copper pad for thermal and current sharing. |
| 6 (S) | Source | Power return node; referenced to gate drive ground; used for current sensing in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 100% production UIS tested | Guarantees avalanche ruggedness without screening fallout-eliminates field failure risk in inductive switching. |
| +175°C rated operation | Enables placement near heat sources (e.g., engines, power stages) without derating or forced cooling. |
| Low QGD/QG ratio | 27% (22nC/81nC) reduces Miller-induced shoot-through risk during hard-switching in half-bridge topologies. |
| Green, halogen-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-609A Class 1 standards for environmentally compliant manufacturing. |
| Optimized Ciss/Coss ratio | 4979pF/1166pF enables predictable ZVS behavior in resonant LLC converters above 300kHz. |
Applications
| Automotive DC-DC Converters | Industrial Load Switching |
|---|---|
|
Use Scenario: 12V-to-48V bidirectional converter in mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200kHz with 50% duty cycle. Use Value: 3.8mΩ RDS(ON) reduces conduction loss by 32% vs. legacy 5.5mΩ devices, improving system efficiency from 92.1% to 93.4% at 60A. |
Use Scenario: Hot-swap controller for 48V server backplane power distribution. IC Role / Device Role / Timing Role: Main pass element in OR-ing and inrush limiting circuit with external gate driver. Use Value: 175°C rating allows operation at 125°C ambient without thermal throttling, enabling compact board area vs. dual-MOSFET solutions. |
| Telecom Power Supplies | Motor Drive Half-Bridge Legs |
|
Use Scenario: Primary-side switch in 1kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET subjected to 80V blocking and 100A peak currents during burst mode. Use Value: 183.7mJ EAS withstands repeated 400A pulsed currents during startup surges without degradation. |
Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC compressors. IC Role / Device Role / Timing Role: PWM-controlled power stage element switching at 15kHz with 100A RMS current. Use Value: 53ns body diode tRR minimizes commutation loss and prevents cross-conduction in 6-step commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP110N10T | 100V VDSS, 4.2mΩ @ 10V, TO-220 package, RθJC = 0.8°C/W | Higher voltage margin but larger footprint and no integrated thermal pad | Preferred where higher VDSS margin is required and PCB space permits through-hole mounting. |
| STL220N6F7 | 60V VDSS, 2.2mΩ @ 10V, PowerFLAT 5x6 package, RθJC = 1.4°C/W | Lower voltage rating but lower RDS(ON); not suitable for 48V+ systems | Select only for 24V systems requiring sub-3mΩ on-resistance and footprint constraints outweigh voltage headroom needs. |
Compared with IXTP110N10T and STL220N6F7, DMTH8004LPS uniquely balances 80V rating, 3.8mΩ on-resistance, and PowerDI5060-8 thermal performance-making it optimal for space-constrained 48V automotive and industrial loads where 175°C operation is mandatory.
Availability
DMTH8004LPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial hot-swap controllers, and telecom power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability.
Supply support for DMTH8004LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-temperature power conversion and load switching in automotive, industrial, and computing applications.
FAQ
What is the maximum allowable gate-source voltage for DMTH8004LPS?
The absolute maximum VGS rating is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±20V risks irreversible gate oxide damage. For reliable switching, gate drive should be clamped to +12V to +15V with a negative turn-off bias of -5V to suppress Miller-induced false turn-on in high-dv/dt environments.
Does DMTH8004LPS require a gate resistor for safe operation?
Yes-a series gate resistor (typically 2.2Ω to 10Ω) is required to dampen ringing caused by Lg–Ciss resonance and control dV/dt during switching. The internal 2.1Ω RG is insufficient alone; external resistance ensures stable turn-on/turn-off timing and prevents oscillation when driving from standard 1A peak gate drivers.
How is thermal performance validated for this PowerDI5060-8 MOSFET?
Thermal validation is based on measured RθJC = 1.2°C/W using JEDEC JESD51-14's transient dual-interface test method. This value assumes soldering to a 1-inch² 2oz copper thermal pad with 4 thermal vias; actual board-level RθJA varies from 51°C/W (enhanced layout) to 101°C/W (minimal pad), as specified in Notes 5–7 of the datasheet.
Is DMTH8004LPS qualified for automotive applications per AEC-Q101?
No-while the device is manufactured in IATF 16949-certified facilities and rated for 175°C operation, it is not formally AEC-Q101 qualified. Diodes Incorporated states that automotive-grade versions require specific change control and PPAP documentation; users must contact Diodes directly to obtain AEC-Q101-compliant variants such as the DMTH8004LPS-Q.
DMTH8004LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4979 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH8004LPS-13 FAQ
1.How can I place an order for DMTH8004LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8004LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8004LPS-13 reliable?
The price and inventory of DMTH8004LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8004LPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH8004LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8004LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8004LPS-13?
DMTH8004LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8004LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8004LPS-13?
For technical support, including DMTH8004LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8004LPS-13 requirements.
6.How does Aetrix verify that DMTH8004LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH8004LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8004LPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH8004LPS-13?
All DMTH8004LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8004LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8004LPS-13 part is unused and in its original packaging.
Return procedure for DMTH8004LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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